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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-220AB PKG
IRLZ44NPBF
MOSFET N-CH 55V 47A TO220AB
Infineon Technologies
54,039
In Stock
1 : $1.52000
Tube
Tube
ActiveN-ChannelMOSFET (Metal Oxide)55 V47A (Tc)4V, 10V22mOhm @ 25A, 10V2V @ 250µA48 nC @ 5 V±16V1700 pF @ 25 V-3.8W (Ta), 110W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-220ABTO-220-3
PG-TO247-3
SPW47N60C3FKSA1
MOSFET N-CH 650V 47A TO247-3
Infineon Technologies
1,572
In Stock
1 : $20.15000
Tube
Tube
ActiveN-ChannelMOSFET (Metal Oxide)650 V47A (Tc)10V70mOhm @ 30A, 10V3.9V @ 2.7mA320 nC @ 10 V±20V6800 pF @ 25 V-415W (Tc)-55°C ~ 150°C (TJ)Through HolePG-TO247-3-1TO-247-3
TO-3P-3,TO-247-3
FCA47N60
MOSFET N-CH 600V 47A TO3PN
onsemi
561
In Stock
1 : $9.96000
Tube
Tube
ActiveN-ChannelMOSFET (Metal Oxide)600 V47A (Tc)10V70mOhm @ 23.5A, 10V5V @ 250µA270 nC @ 10 V±30V8000 pF @ 25 V-417W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-3PNTO-3P-3, SC-65-3
UJ4SC075006K4S
UJ4C075033K4S
750V/33MOHM, SIC, CASCODE, G4, T
UnitedSiC
526
In Stock
1 : $11.84000
Tube
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Tube
ActiveN-ChannelSiCFET (Silicon Carbide)750 V47A (Tc)12V41mOhm @ 30A, 12V6V @ 10mA37.8 nC @ 15 V±20V1400 pF @ 400 V-242W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-4TO-247-4
UF3C120080B7S
UF3SC120040B7S
1200V/40MOHM, SIC, STACKED FAST
UnitedSiC
2,751
In Stock
1 : $26.83000
Cut Tape (CT)
800 : $19.18753
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelSiCFET (Cascode SiCJFET)1200 V47A (Tc)12V45mOhm @ 35A, 12V6V @ 10mA43 nC @ 12 V±25V1500 pF @ 100 V-214W (Tc)-55°C ~ 175°C (TJ)Surface MountD2PAK-7TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
IMW65R0xxM1HXKSA1
IMW65R027M1HXKSA1
MOSFET 650V NCH SIC TRENCH
Infineon Technologies
136
In Stock
1 : $28.06000
Tube
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Tube
Active---47A (Tc)------------
TO-247-3 AC EP
SIHW47N60E-GE3
MOSFET N-CH 600V 47A TO247AD
Vishay Siliconix
285
In Stock
1 : $10.21000
Tube
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Tube
ActiveN-ChannelMOSFET (Metal Oxide)600 V47A (Tc)10V64mOhm @ 24A, 10V4V @ 250µA220 nC @ 10 V±20V9620 pF @ 100 V-357W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247ADTO-3P-3 Full Pack
TO-3P-3,TO-247-3
FCA47N60F
MOSFET N-CH 600V 47A TO3PN
onsemi
362
In Stock
1 : $10.55000
Tube
Tube
ActiveN-ChannelMOSFET (Metal Oxide)600 V47A (Tc)10V73mOhm @ 23.5A, 10V5V @ 250µA270 nC @ 10 V±30V8000 pF @ 25 V-417W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-3PNTO-3P-3, SC-65-3
TO-3P-3,TO-247-3
FCA47N60-F109
MOSFET N-CH 600V 47A TO3PN
onsemi
880
In Stock
1 : $10.12000
Tube
1 : $12.14000
Tube
Tube
Tube
ActiveN-ChannelMOSFET (Metal Oxide)600 V47A (Tc)10V70mOhm @ 23.5A, 10V5V @ 250µA270 nC @ 10 V±30V8000 pF @ 25 V-417W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-3PNTO-3P-3, SC-65-3
SGP15N60XKSA1
HUF76121P3
N-CHANNEL POWER MOSFET
Fairchild Semiconductor
26,402
Marketplace
760 : $0.40000
Bulk
Bulk
ActiveN-ChannelMOSFET (Metal Oxide)30 V47A (Tc)4.5V, 10V21mOhm @ 47A, 10V3V @ 250µA30 nC @ 10 V±20V850 pF @ 25 V-75W (Tc)-40°C ~ 150°C (TJ)Through HoleTO-220ABTO-220-3
TO-247G
R6547ENZ4C13
650V 47A TO-247, LOW-NOISE POWER
Rohm Semiconductor
509
In Stock
1 : $9.92000
Tube
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Tube
ActiveN-ChannelMOSFET (Metal Oxide)650 V47A (Tc)10V80mOhm @ 25.8A, 10V4V @ 1.72mA150 nC @ 10 V±20V3800 pF @ 25 V-480W (Tc)150°C (TJ)Through HoleTO-247GTO-247-3
UJ4C075023K3S
UJ4C075033K3S
750V/33MOHM, SIC, CASCODE, G4, T
UnitedSiC
1,172
In Stock
1 : $11.39000
Tube
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Tube
ActiveN-ChannelSiCFET (Silicon Carbide)750 V47A (Tc)12V41mOhm @ 30A, 12V6V @ 10mA37.8 nC @ 15 V±20V1400 pF @ 400 V-242W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
SIC MOS TO247-3L 650V
NTHL060N065SC1
SIC MOS TO247-3L 650V
onsemi
450
In Stock
900
Factory
1 : $12.50000
Tube
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Tube
ActiveN-ChannelSiCFET (Silicon Carbide)650 V47A (Tc)15V, 18V70mOhm @ 20A, 18V4.3V @ 6.5mA74 nC @ 18 V+22V, -8V1473 pF @ 325 V-176W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
SIC MOS TO247-4L 650V
NTH4L060N065SC1
SIC MOS TO247-4L 650V
onsemi
450
In Stock
1 : $15.96000
Tube
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Tube
ActiveN-ChannelSiCFET (Silicon Carbide)650 V47A (Tc)15V, 18V70mOhm @ 20A, 18V4.3V @ 6.5mA74 nC @ 18 V+22V, -8V1473 pF @ 325 V-176W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-4LTO-247-4
ISOPLUS247 Pkg
IXKR47N60C5
MOSFET N-CH 600V 47A ISOPLUS247
IXYS
107
In Stock
1 : $25.05000
Tube
Tube
ActiveN-ChannelMOSFET (Metal Oxide)600 V47A (Tc)10V45mOhm @ 44A, 10V3.5V @ 3mA190 nC @ 10 V±20V6800 pF @ 100 VSuper Junction--55°C ~ 150°C (TJ)Through HoleISOPLUS247™TO-247-3
D2PAK SOT404
PHB45NQ10T,118
MOSFET N-CH 100V 47A D2PAK
Nexperia USA Inc.
1,189
In Stock
1 : $2.00000
Cut Tape (CT)
800 : $1.18541
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)100 V47A (Tc)10V25mOhm @ 25A, 10V4V @ 1mA61 nC @ 10 V±20V2600 pF @ 25 V-150W (Tc)-55°C ~ 175°C (TJ)Surface MountD2PAKTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
C3M0040120J1-TR
C3M0045065J1
650V 45 M SIC MOSFET
Wolfspeed, Inc.
2,000
In Stock
1 : $17.72000
Tube
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)650 V47A (Tc)15V60mOhm @ 17.6A, 15V3.6V @ 4.84mA61 nC @ 15 V+19V, -8V1621 pF @ 400 V-147W (Tc)-40°C ~ 150°C (TJ)Surface MountTO-263-7TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
TO-247-3 AD EP
FCH47N60F-F085
MOSFET N-CH 600V 47A TO247-3
onsemi
427
In Stock
1 : $17.95000
Tube
Tube
ObsoleteN-ChannelMOSFET (Metal Oxide)600 V47A (Tc)10V75mOhm @ 47A, 10V5V @ 250µA250 nC @ 10 V±30V8000 pF @ 25 V-417W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247-3
TO-247-AD-EP-(H)
IXKH47N60C
MOSFET N-CH 600V 47A TO247AD
IXYS
290
In Stock
300
Factory
1 : $24.93000
Tube
Tube
ActiveN-ChannelMOSFET (Metal Oxide)600 V47A (Tc)10V70mOhm @ 30A, 10V4V @ 2mA650 nC @ 10 V±20V-Super Junction--55°C ~ 150°C (TJ)Through HoleTO-247ADTO-247-3
RF1S9640SM9A
BUK6213-30C,118
NEXPERIA BUK6213-30C - 47A, 30V,
Nexperia USA Inc.
152,500
Marketplace
1,374 : $0.22000
Bulk
Bulk
ActiveN-ChannelMOSFET (Metal Oxide)30 V47A (Tc)10V14mOhm @ 10A, 10V2.8V @ 1mA19.5 nC @ 10 V±16V1108 pF @ 25 V-60W (Tc)-55°C ~ 175°C (TJ)Surface MountDPAKTO-252-3, DPak (2 Leads + Tab), SC-63
RF1S9640SM9A
BUK6213-30C,118
NEXPERIA BUK6213-30C - 47A, 30V,
NXP Semiconductors
14,600
Marketplace
1,374 : $0.22000
Bulk
Bulk
ActiveN-ChannelMOSFET (Metal Oxide)30 V47A (Tc)10V14mOhm @ 10A, 10V2.8V @ 1mA19.5 nC @ 10 V±16V1108 pF @ 25 V-60W (Tc)-55°C ~ 175°C (TJ)Surface MountDPAKTO-252-3, DPak (2 Leads + Tab), SC-63
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRLZ44NSTRLPBF
MOSFET N-CH 55V 47A D2PAK
Infineon Technologies
2,149
In Stock
1 : $1.66000
Cut Tape (CT)
800 : $0.95350
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)55 V47A (Tc)4V, 10V22mOhm @ 25A, 10V2V @ 250µA48 nC @ 5 V±16V1700 pF @ 25 V-3.8W (Ta), 110W (Tc)-55°C ~ 175°C (TJ)Surface MountD2PAKTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-247-3-PKG-Series
APT47N60BC3G
MOSFET N-CH 600V 47A TO247
Microchip Technology
30
In Stock
1 : $14.01000
Tube
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Tube
ActiveN-ChannelMOSFET (Metal Oxide)600 V47A (Tc)10V70mOhm @ 30A, 10V3.9V @ 2.7mA260 nC @ 10 V±20V7015 pF @ 25 V-417W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247 [B]TO-247-3
D3Pak
APT47N60SC3G
MOSFET N-CH 600V 47A D3PAK
Microchip Technology
80
In Stock
1 : $15.11000
Tube
Tube
ActiveN-ChannelMOSFET (Metal Oxide)600 V47A (Tc)10V70mOhm @ 30A, 10V3.9V @ 2.7mA260 nC @ 10 V±20V7015 pF @ 25 V-417W (Tc)-55°C ~ 150°C (TJ)Surface MountD3 [S]TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
4,000
Marketplace
656 : $0.46000
Bulk
Bulk
ActiveN-ChannelMOSFET (Metal Oxide)30 V47A (Tc)4.5V, 10V21mOhm @ 47A, 10V3V @ 250µA30 nC @ 10 V±20V850 pF @ 25 V-75W (Tc)-40°C ~ 150°C (TJ)Surface MountD2PAK (TO-263)TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Showing
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of 133

47A (Tc) Transistors - FETs, MOSFETs - Single


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.