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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
Discrete Semiconductor-FET
TP65H035WS
GANFET N-CH 650V 46.5A TO247-3
Transphorm
980
In Stock
1 : $22.75000
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ActiveN-ChannelGaNFET (Cascode Gallium Nitride FET)650 V46.5A (Tc)12V41mOhm @ 30A, 10V4.8V @ 1mA36 nC @ 10 V±20V1500 pF @ 400 V-156W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247-3
TP65H035G4WS
TP65H035G4WS
GANFET N-CH 650V 46.5A TO247-3
Transphorm
922
In Stock
1 : $20.43000
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ActiveN-ChannelGaNFET (Cascode Gallium Nitride FET)650 V46.5A (Tc)10V41mOhm @ 30A, 10V4.8V @ 1mA22 nC @ 0 V±20V1500 pF @ 400 V-156W (Tc)-55°C ~ 150°CThrough HoleTO-247-3TO-247-3
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46.5A (Tc) Transistors - FETs, MOSFETs - Single


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.