4-SMD, No Lead Single FETs, MOSFETs

Results: 27
Manufacturer
Alpha & Omega Semiconductor Inc.EPC Space, LLCToshiba Semiconductor and Storage
Series
-e-GaN®eGaN®FSMD-BU-MOSIII
Packaging
BulkCut Tape (CT)Digi-Reel®Tape & Reel (TR)Tray
Product Status
ActiveObsolete
FET Type
N-ChannelP-Channel
Technology
GaNFET (Gallium Nitride)MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
8 V20 V30 V40 V60 V100 V200 V300 V
Current - Continuous Drain (Id) @ 25°C
500mA (Ta)1A (Tc)1.8A (Ta)2A (Ta)2.5A (Ta)3A (Ta)3.5A (Ta)4A (Tc)4.5A (Ta)5A (Tc)8A (Tc)18A (Tc)30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.2V, 2.5V1.5V, 4.5V1.8V, 4.5V1.8V, 4V2.5V, 10V5V
Rds On (Max) @ Id, Vgs
9mOhm @ 30A, 5V12mOhm @ 30A, 5V13mOhm @ 30A, 5V19mOhm @ 1.5A, 2.5V23mOhm @ 1.5A, 4.5V24mOhm @ 8A, 5V26mOhm @ 18A, 5V28mOhm @ 1.5A, 2.5V28mOhm @ 18A, 5V32mOhm @ 1.5A, 10V33mOhm @ 1.5A, 2.5V33mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id
650mV @ 250µA700mV @ 250µA800mV @ 250µA1V @ 250µA1.1V @ 1mA1.2V @ 250µA1.3V @ 250µA1.4V @ 250µA2.5V @ 1.2mA2.5V @ 140µA2.5V @ 2mA2.5V @ 3mA2.5V @ 5mA2.5V @ 7mA
Gate Charge (Qg) (Max) @ Vgs
2.2 nC @ 5 V2.6 nC @ 5 V2.8 nC @ 5 V3 nC @ 5 V4.8 nC @ 4.5 V5.4 nC @ 5 V6 nC @ 5 V7 nC @ 5 V10 nC @ 10 V11 nC @ 5 V11.4 nC @ 5 V13 nC @ 4.5 V15 nC @ 4.5 V27 nC @ 4.5 V
Vgs (Max)
±5V+6V, -4V+7V, -4V±8V±12V-
Input Capacitance (Ciss) (Max) @ Vds
22 pF @ 30 V150 pF @ 100 V174 pF @ 10 V233 pF @ 50 V312 pF @ 20 V405 pF @ 10 V450 pF @ 150 V470 pF @ 10 V525 pF @ 100 V752 pF @ 4 V797 pF @ 50 V870 pF @ 4 V
Power Dissipation (Max)
400mW (Ta)450mW (Ta)550mW (Ta)600mW (Ta)-
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
4-AlphaDFN (0.97x0.97)4-AlphaDFN (1.57x1.57)4-SMDCST4 (1.2x0.8)
Stocking Options
Environmental Options
Media
Marketplace Product
27Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
FBG20N18BC
FBG20N18BC
GAN FET HEMT200V18A COTS 4FSMD-B
EPC Space, LLC
178
In Stock
Active
-
-
ActiveN-ChannelGaNFET (Gallium Nitride)200 V18A (Tc)5V26mOhm @ 18A, 5V2.5V @ 3mA6 nC @ 5 V+6V, -4V900 pF @ 100 V---55°C ~ 150°C (TJ)Surface Mount4-SMD4-SMD, No Lead
FBG04N08AC (primary)
FBG04N08AC
GAN FET HEMT 40V 8A 4FSMD-A
EPC Space, LLC
100
In Stock
Active
-
-
ActiveN-ChannelGaNFET (Gallium Nitride)40 V8A (Tc)5V24mOhm @ 8A, 5V2.5V @ 2mA2.8 nC @ 5 V+6V, -4V312 pF @ 20 V---55°C ~ 150°C (TJ)Surface Mount4-SMD4-SMD, No Lead
FBG04N30BC
FBG04N30BC
GAN FET HEMT 40V30A COTS 4FSMD-B
EPC Space, LLC
54
In Stock
Active
-
ActiveN-ChannelGaNFET (Gallium Nitride)40 V30A (Tc)5V9mOhm @ 30A, 5V2.5V @ 9mA11.4 nC @ 5 V+6V, -4V1300 pF @ 20 V---55°C ~ 150°C (TJ)Surface Mount4-SMD4-SMD, No Lead
FBG10N05AC (primary)
FBG10N05AC
GAN FET HEMT 100V5A COTS 4FSMD-A
EPC Space, LLC
27
In Stock
Active
-
-
ActiveN-ChannelGaNFET (Gallium Nitride)100 V5A (Tc)5V44mOhm @ 5A, 5V2.5V @ 1.2mA2.2 nC @ 5 V+6V, -4V233 pF @ 50 V---55°C ~ 150°C (TJ)Surface Mount4-SMD4-SMD, No Lead
EPC7014UBC (primary)
EPC7014UBC
GAN FET HEMT 60V 1A COTS 4UB
EPC Space, LLC
52
In Stock
Active
-
ActiveN-ChannelGaNFET (Gallium Nitride)60 V1A (Tc)5V580mOhm @ 1A, 5V2.5V @ 140µA-+7V, -4V22 pF @ 30 V---55°C ~ 150°C (TJ)Surface Mount4-SMD4-SMD, No Lead
GAN FET HEMT200V18A COTS 4FSMD-B
EPC7007BC
GAN FET HEMT200V18A COTS 4FSMD-B
EPC Space, LLC
150
In Stock
1 : $329.35000
Bulk
Bulk
ActiveP-ChannelMOSFET (Metal Oxide)200 V18A (Tc)5V28mOhm @ 18A, 5V2.5V @ 3mA5.4 nC @ 5 V+6V, -4V525 pF @ 100 V---55°C ~ 150°C (TJ)Surface Mount4-SMD4-SMD, No Lead
FBG30N04CC (primary)
FBG30N04CC
GAN FET HEMT 300V4A COTS 4FSMD-C
EPC Space, LLC
99
In Stock
Active
-
-
ActiveN-ChannelGaNFET (Gallium Nitride)300 V4A (Tc)5V404mOhm @ 4A, 5V2.8V @ 600µA2.6 nC @ 5 V+6V, -4V450 pF @ 150 V---55°C ~ 150°C (TJ)Surface Mount4-SMD4-SMD, No Lead
GAN FET HEMT 100V 5A 4FSMD-A
FBG10N05ASH
GAN FET HEMT 100V 5A 4FSMD-A
EPC Space, LLC
25
In Stock
Active
-
ActiveN-ChannelGaNFET (Gallium Nitride)100 V5A (Tc)5V45mOhm @ 5A, 5V2.5V @ 1.2mA2.2 nC @ 5 V+6V, -4V233 pF @ 50 V---55°C ~ 150°C (TJ)Surface Mount4-SMD4-SMD, No Lead
FBG10N30BC (primary)
FBG10N30BC
GAN FET HEMT100V30A COTS 4FSMD-B
EPC Space, LLC
3
In Stock
Active
-
-
ActiveN-ChannelGaNFET (Gallium Nitride)100 V30A (Tc)5V9mOhm @ 30A, 5V2.5V @ 5mA11 nC @ 5 V+6V, -4V1000 pF @ 50 V---55°C ~ 150°C (TJ)Surface Mount4-SMD4-SMD, No Lead
4-AlphaDFN
AOC2421
MOSFET P-CH 8V 2.5A 4ALPHADFN
Alpha & Omega Semiconductor Inc.
0
In Stock
Check Lead Time
5,000 : $0.21010
Tape & Reel (TR)
-
Tape & Reel (TR)
ActiveP-ChannelMOSFET (Metal Oxide)8 V2.5A (Ta)1.2V, 2.5V62mOhm @ 1.5A, 2.5V700mV @ 250µA13 nC @ 4.5 V±5V752 pF @ 4 V-600mW (Ta)-55°C ~ 150°C (TJ)Surface Mount4-AlphaDFN (0.97x0.97)4-SMD, No Lead
GAN FET HEMT 60V 1A 4UB
EPC7014UBSH
GAN FET HEMT 60V 1A 4UB
EPC Space, LLC
0
In Stock
Check Lead Time
Active
-
ActiveN-ChannelGaNFET (Gallium Nitride)60 V1A (Tc)5V580mOhm @ 1A, 5V2.5V @ 140µA--22 pF @ 30 V---55°C ~ 150°C (TJ)Surface Mount4-SMD4-SMD, No Lead
GAN FET HEMT100V30A COTS 4FSMD-B
EPC7004BC
GAN FET HEMT100V30A COTS 4FSMD-B
EPC Space, LLC
0
In Stock
Check Lead Time
1 : $329.35000
Tray
-
Tray
ActiveN-ChannelGaNFET (Gallium Nitride)100 V30A (Tc)5V13mOhm @ 30A, 5V2.5V @ 7mA7 nC @ 5 V+6V, -4V797 pF @ 50 V---55°C ~ 150°C (TJ)Surface Mount4-SMD4-SMD, No Lead
GAN FET HEMT 40V 8A 4FSMD-A
FBG04N08ASH
GAN FET HEMT 40V 8A 4FSMD-A
EPC Space, LLC
0
In Stock
Check Lead Time
Active
-
ActiveN-ChannelGaNFET (Gallium Nitride)40 V8A (Tc)5V24mOhm @ 8A, 5V2.5V @ 2mA2.8 nC @ 5 V+6V, -4V312 pF @ 20 V---55°C ~ 150°C (TJ)Surface Mount4-SMD4-SMD, No Lead
GAN FET HEMT 200V 4A 4FSMD-A
FBG20N04ASH
GAN FET HEMT 200V 4A 4FSMD-A
EPC Space, LLC
0
In Stock
Check Lead Time
Active
-
ActiveN-ChannelGaNFET (Gallium Nitride)200 V4A (Tc)5V130mOhm @ 4A, 5V2.8V @ 1mA3 nC @ 5 V+6V, -4V150 pF @ 100 V---55°C ~ 150°C (TJ)Surface Mount4-SMD4-SMD, No Lead
GAN FET HEMT 200V 18A 4FSMD-B
FBG20N18BSH
GAN FET HEMT 200V 18A 4FSMD-B
EPC Space, LLC
0
In Stock
Check Lead Time
Active
-
ActiveN-ChannelGaNFET (Gallium Nitride)200 V18A (Tc)5V28mOhm @ 18A, 5V2.5V @ 3mA7 nC @ 5 V+6V, -4V900 pF @ 100 V---55°C ~ 150°C (TJ)Surface Mount4-SMD4-SMD, No Lead
GAN FET HEMT 40V 30A 4FSMD-B
FBG04N30BSH
GAN FET HEMT 40V 30A 4FSMD-B
EPC Space, LLC
0
In Stock
Check Lead Time
Active
-
ActiveN-ChannelGaNFET (Gallium Nitride)40 V30A (Tc)5V9mOhm @ 30A, 5V2.5V @ 9mA11.4 nC @ 5 V+6V, -4V1300 pF @ 20 V---55°C ~ 150°C (TJ)Surface Mount4-SMD4-SMD, No Lead
GAN FET HEMT 100V 30A 4FSMD-B
FBG10N30BSH
GAN FET HEMT 100V 30A 4FSMD-B
EPC Space, LLC
0
In Stock
Check Lead Time
Active
-
ActiveN-ChannelGaNFET (Gallium Nitride)100 V30A (Tc)5V12mOhm @ 30A, 5V2.5V @ 5mA11 nC @ 5 V+6V, -4V1000 pF @ 50 V---55°C ~ 150°C (TJ)Surface Mount4-SMD4-SMD, No Lead
SSM4K
SSM4K27CTTPL3
MOSFET N-CH 20V 500MA CST4
Toshiba Semiconductor and Storage
0
In Stock
Obsolete
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ObsoleteN-ChannelMOSFET (Metal Oxide)20 V500mA (Ta)1.8V, 4V205mOhm @ 250mA, 4V1.1V @ 1mA-±12V174 pF @ 10 V-400mW (Ta)150°C (TJ)Surface MountCST4 (1.2x0.8)4-SMD, No Lead
4-AlphaDFN
AOC2403
MOSFET P-CH 20V 1.8A 4ALPHADFN
Alpha & Omega Semiconductor Inc.
0
In Stock
Obsolete
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ObsoleteP-ChannelMOSFET (Metal Oxide)20 V1.8A (Ta)1.5V, 4.5V95mOhm @ 1A, 4.5V1V @ 250µA4.8 nC @ 4.5 V±8V405 pF @ 10 V-450mW (Ta)-55°C ~ 150°C (TJ)Surface Mount4-AlphaDFN (0.97x0.97)4-SMD, No Lead
4-AlphaDFN
AOC2401
MOSFET P-CH 30V 3A 4ALPHADFN
Alpha & Omega Semiconductor Inc.
0
In Stock
Obsolete
-
Tape & Reel (TR)
ObsoleteP-ChannelMOSFET (Metal Oxide)30 V3A (Ta)2.5V, 10V41mOhm @ 1.5A, 10V1.3V @ 250µA40 nC @ 10 V±12V1327 pF @ 15 V-550mW (Ta)-55°C ~ 150°C (TJ)Surface Mount4-AlphaDFN (1.57x1.57)4-SMD, No Lead
4-AlphaDFN
AOC2412
MOSFET N-CH 20V 4.5A 4ALPHADFN
Alpha & Omega Semiconductor Inc.
0
In Stock
Obsolete
-
Tape & Reel (TR)
ObsoleteN-ChannelMOSFET (Metal Oxide)20 V4.5A (Ta)1.8V, 4.5V23mOhm @ 1.5A, 4.5V1V @ 250µA32 nC @ 4.5 V±8V1842 pF @ 10 V-550mW (Ta)-55°C ~ 150°C (TJ)Surface Mount4-AlphaDFN (1.57x1.57)4-SMD, No Lead
4-AlphaDFN
AOC2413
MOSFET P-CH 8V 3.5A 4ALPHADFN
Alpha & Omega Semiconductor Inc.
0
In Stock
Obsolete
-
Tape & Reel (TR)
ObsoleteP-ChannelMOSFET (Metal Oxide)8 V3.5A (Ta)1.2V, 2.5V28mOhm @ 1.5A, 2.5V650mV @ 250µA27 nC @ 4.5 V±5V1935 pF @ 4 V-550mW (Ta)-55°C ~ 150°C (TJ)Surface Mount4-AlphaDFN (1.57x1.57)4-SMD, No Lead
4-AlphaDFN
AOC2414
MOSFET N-CH 8V 4.5A 4ALPHADFN
Alpha & Omega Semiconductor Inc.
0
In Stock
Obsolete
-
Tape & Reel (TR)
ObsoleteN-ChannelMOSFET (Metal Oxide)8 V4.5A (Ta)1.2V, 2.5V19mOhm @ 1.5A, 2.5V800mV @ 250µA32 nC @ 4.5 V±5V2042 pF @ 4 V-550mW (Ta)-55°C ~ 150°C (TJ)Surface Mount4-AlphaDFN (1.57x1.57)4-SMD, No Lead
4-AlphaDFN
AOC2415
MOSFET P-CH 20V 3.5A 4ALPHADFN
Alpha & Omega Semiconductor Inc.
0
In Stock
Obsolete
-
Tape & Reel (TR)
ObsoleteP-ChannelMOSFET (Metal Oxide)20 V3.5A (Ta)1.5V, 4.5V33mOhm @ 1.5A, 4.5V1V @ 250µA28 nC @ 4.5 V±8V1685 pF @ 10 V-550mW (Ta)-55°C ~ 150°C (TJ)Surface Mount4-AlphaDFN (1.57x1.57)4-SMD, No Lead
4-AlphaDFN
AOC2417
MOSFET P-CH 20V 3.5A 4ALPHADFN
Alpha & Omega Semiconductor Inc.
0
In Stock
Obsolete
-
Tape & Reel (TR)
ObsoleteP-ChannelMOSFET (Metal Oxide)20 V3.5A (Ta)2.5V, 10V32mOhm @ 1.5A, 10V1.4V @ 250µA40 nC @ 10 V±12V1355 pF @ 10 V-550mW (Ta)-55°C ~ 150°C (TJ)Surface Mount4-AlphaDFN (1.57x1.57)4-SMD, No Lead
Showing
1 - 25
of 27

4-SMD, No Lead Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.