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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IMW65R0xxM1HXKSA1
IMW65R048M1HXKSA1
MOSFET 650V NCH SIC TRENCH
Infineon Technologies
1,529
In Stock
1 : $18.45000
Tube
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ActiveN-ChannelSiCFET (Silicon Carbide)650 V39A (Tc)18V64mOhm @ 20.1A, 18V5.7V @ 6mA33 nC @ 18 V+23V, -5V1118 pF @ 400 V-125W (Tc)-55°C ~ 150°C (TJ)Through HolePG-TO247-3-41TO-247-3
SCT3105KRC14-front
SCT3060ARC14
SICFET N-CH 650V 39A TO247-4L
Rohm Semiconductor
131
In Stock
1 : $24.27000
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ActiveN-ChannelSiCFET (Silicon Carbide)650 V39A (Tc)18V78mOhm @ 13A, 18V5.6V @ 6.67mA58 nC @ 18 V+22V, -4V852 pF @ 500 V-165W175°C (TJ)Through HoleTO-247-4LTO-247-4
IMZA65R048M1HXKSA1
IMZA65R048M1HXKSA1
MOSFET 650V NCH SIC TRENCH
Infineon Technologies
622
In Stock
1 : $18.40000
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Tube
ActiveN-ChannelSiCFET (Silicon Carbide)650 V39A (Tc)18V64mOhm @ 20.1A, 18V5.7V @ 6mA33 nC @ 18 V+23V, -5V1118 pF @ 400 V-125W (Tc)-55°C ~ 150°C (TJ)Through HolePG-TO247-4-3TO-247-4
8-HSMT
RQ3E180BNTB
MOSFET N-CHANNEL 30V 39A 8HSMT
Rohm Semiconductor
5,484
In Stock
1 : $0.70000
Cut Tape (CT)
3,000 : $0.27253
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)30 V39A (Tc)4.5V, 10V3.9mOhm @ 18A, 10V2.5V @ 1mA37 nC @ 4.5 V±20V3500 pF @ 15 V-2W (Ta), 20W (Tc)-55°C ~ 150°C (TJ)Surface Mount8-HSMT (3.2x3)8-PowerVDFN
TO-220F
AOTF42S60L
MOSFET N-CH 600V 39A TO220-3F
Alpha & Omega Semiconductor Inc.
4,077
In Stock
1 : $6.64000
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Not For New DesignsN-ChannelMOSFET (Metal Oxide)600 V39A (Tc)10V99mOhm @ 21A, 10V3.8V @ 250µA40 nC @ 10 V±30V2154 pF @ 100 V-37.9W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-220FTO-220-3 Full Pack
IMBG65R048M1HXTMA1
IMBG65R057M1HXTMA1
SILICON CARBIDE MOSFET PG-TO263-
Infineon Technologies
950
In Stock
1 : $12.92000
Cut Tape (CT)
1,000 : $8.18267
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelSiCFET (Silicon Carbide)650 V39A (Tc)18V74mOhm @ 16.7A, 18V5.7V @ 5mA28 nC @ 18 V+23V, -5V930 pF @ 400 V-161W (Tc)-55°C ~ 175°C (TJ)Surface MountPG-TO263-7-12TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
SOT-227B,MINIBLOC  Pkg
IXFN44N80P
MOSFET N-CH 800V 39A SOT-227B
IXYS
10
In Stock
1 : $35.24000
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ActiveN-ChannelMOSFET (Metal Oxide)800 V39A (Tc)10V190mOhm @ 500mA, 10V5V @ 8mA200 nC @ 10 V±30V12000 pF @ 25 V-694W (Tc)-55°C ~ 150°C (TJ)Chassis MountSOT-227BSOT-227-4, miniBLOC
TO-247N
SCT3060ALGC11
SICFET N-CH 650V 39A TO247N
Rohm Semiconductor
0
In Stock
1 : $15.53000
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Tube
ActiveN-ChannelSiCFET (Silicon Carbide)650 V39A (Tc)18V78mOhm @ 13A, 18V5.6V @ 6.67mA58 nC @ 18 V+22V, -4V852 pF @ 500 V-165W (Tc)175°C (TJ)Through HoleTO-247NTO-247-3
D2PAK SOT404
PSMN057-200B,118
MOSFET N-CH 200V 39A D2PAK
Nexperia USA Inc.
0
In Stock
1 : $3.30000
Cut Tape (CT)
800 : $1.95695
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)200 V39A (Tc)10V57mOhm @ 17A, 10V4V @ 1mA96 nC @ 10 V±20V3750 pF @ 25 V-250W (Tc)-55°C ~ 175°C (TJ)Surface MountD2PAKTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-247-3 AD Long Lead EP
LSIC1MO120E0080
SICFET N-CH 1200V 39A TO247-3
Littelfuse Inc.
0
In Stock
1 : $23.79000
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ActiveN-ChannelSiCFET (Silicon Carbide)1200 V39A (Tc)20V100mOhm @ 20A, 20V4V @ 10mA95 nC @ 20 V+22V, -6V1825 pF @ 800 V-179W (Tc)-55°C ~ 150°CThrough HoleTO-247ADTO-247-3
TO-247N
SCT3060ALHRC11
SICFET N-CH 650V 39A TO247N
Rohm Semiconductor
282
In Stock
1 : $27.72000
Tube
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)650 V39A (Tc)18V78mOhm @ 13A, 18V5.6V @ 6.67mA58 nC @ 18 V+22V, -4V852 pF @ 500 V-165W175°C (TJ)Through HoleTO-247NTO-247-3
TO-220F
FDPF39N20
MOSFET N-CH 200V 39A TO220F
onsemi
0
In Stock
1 : $2.08000
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Tube
ActiveN-ChannelMOSFET (Metal Oxide)200 V39A (Tc)10V66mOhm @ 19.5A, 10V5V @ 250µA49 nC @ 10 V±30V2130 pF @ 25 V-37W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-220F-3TO-220-3 Full Pack
LFPAK33
PSMN013-30MLC,115
MOSFET N-CH 30V 39A LFPAK33
Nexperia USA Inc.
97
In Stock
1 : $0.72000
Cut Tape (CT)
1,500 : $0.28054
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)30 V39A (Tc)4.5V, 10V13.6mOhm @ 10A, 10V1.95V @ 1mA8 nC @ 10 V±20V519 pF @ 15 V-38W (Tc)-55°C ~ 175°C (TJ)Surface MountLFPAK33SOT-1210, 8-LFPAK33 (5-Lead)
8-SOIC
SI4126DY-T1-GE3
MOSFET N-CH 30V 39A 8SO
Vishay Siliconix
0
In Stock
1 : $2.71000
Cut Tape (CT)
2,500 : $1.24200
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)30 V39A (Tc)4.5V, 10V2.75mOhm @ 15A, 10V2.5V @ 250µA105 nC @ 10 V±20V4405 pF @ 15 V-3.5W (Ta), 7.8W (Tc)-55°C ~ 150°C (TJ)Surface Mount8-SOIC8-SOIC (0.154", 3.90mm Width)
PG-VSON-4
IPL60R085P7AUMA1
MOSFET N-CH 650V 39A 4VSON
Infineon Technologies
0
In Stock
1 : $7.03000
Cut Tape (CT)
3,000 : $3.85500
Tape & Reel (TR)
1 : $1.00000
Bulk
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Bulk
ActiveN-ChannelMOSFET (Metal Oxide)650 V39A (Tc)10V85mOhm @ 11.8A, 10V4V @ 590µA51 nC @ 10 V±20V2180 pF @ 400 V-154W (Tc)-40°C ~ 150°C (TJ)Surface MountPG-VSON-44-PowerTSFN
0
In Stock
1 : $7.15000
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Tube
Not For New DesignsN-ChannelMOSFET (Metal Oxide)600 V39A (Tc)10V99mOhm @ 21A, 10V3.8V @ 250µA40 nC @ 10 V±30V2154 pF @ 100 V-417W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247TO-247-3
MSC050SDA120B
MSC060SMA070B
SICFET N-CH 700V 39A TO247-3
Microchip Technology
9
In Stock
1 : $9.36000
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Tube
ActiveN-ChannelSiCFET (Silicon Carbide)700 V39A (Tc)20V75mOhm @ 20A, 20V2.4V @ 1mA56 nC @ 20 V+23V, -10V1175 pF @ 700 V-143W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
TO-247-4
MSC060SMA070B4
TRANS SJT N-CH 700V 39A TO247-4
Microchip Technology
0
In Stock
1 : $9.63000
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ActiveN-ChannelSiCFET (Silicon Carbide)700 V39A (Tc)20V75mOhm @ 20A, 20V2.4V @ 1mA56 nC @ 20 V+23V, -10V1175 pF @ 700 V-143W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-4TO-247-4
PG-TO247-3
IPW60R075CPFKSA1
MOSFET N-CH 650V 39A TO247-3
Infineon Technologies
0
In Stock
1 : $1.00000
Bulk
1 : $14.04000
Tube
Bulk
Tube
Not For New DesignsN-ChannelMOSFET (Metal Oxide)650 V39A (Tc)10V75mOhm @ 26A, 10V3.5V @ 1.7mA116 nC @ 10 V±20V4000 pF @ 100 V-313W (Tc)-55°C ~ 150°C (TJ)Through HolePG-TO247-3-1TO-247-3
8-HSMT
RQ3G150GNTB
MOSFET N-CHANNEL 40V 39A 8HSMT
Rohm Semiconductor
0
In Stock
1 : $1.42000
Cut Tape (CT)
3,000 : $0.60053
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)40 V39A (Tc)10V7.2mOhm @ 15A, 10V2.5V @ 1mA11.6 nC @ 4.5 V±20V1450 pF @ 20 V-20W (Tc)-55°C ~ 150°C (TJ)Surface Mount8-HSMT (3.2x3)8-PowerVDFN
IRG4RC10UTRPBF
HUF76633S3ST
MOSFET N-CH 100V 39A D2PAK
Fairchild Semiconductor
31,502
Marketplace
656 : $0.46000
Bulk
Bulk
ObsoleteN-ChannelMOSFET (Metal Oxide)100 V39A (Tc)4.5V, 10V35mOhm @ 39A, 10V3V @ 250µA67 nC @ 10 V±16V1820 pF @ 25 V-145W (Tc)-55°C ~ 175°C (TJ)Surface MountD2PAK (TO-263)TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRG4RC10UTRPBF
HUFA76633S3S
MOSFET N-CH 100V 39A D2PAK
Fairchild Semiconductor
0
Marketplace
383 : $0.55000
Tube
Tube
ObsoleteN-ChannelMOSFET (Metal Oxide)100 V39A (Tc)4.5V, 10V35mOhm @ 39A, 10V3V @ 250µA67 nC @ 10 V±16V1820 pF @ 25 V-145W (Tc)-55°C ~ 175°C (TJ)Surface MountD2PAK (TO-263)TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-220AB-3,SOT78
BUK9540-100A,127
MOSFET N-CH 100V 39A TO220AB
NXP USA Inc.
0
Marketplace
1 : $1.00000
Tube
Tube
ObsoleteN-ChannelMOSFET (Metal Oxide)100 V39A (Tc)4.5V, 10V39mOhm @ 25A, 10V2V @ 1mA48 nC @ 5 V±15V3072 pF @ 25 V-158W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-220ABTO-220-3
IRG4RC10UTRPBF
HUF76633S3S
MOSFET N-CH 100V 39A D2PAK
Fairchild Semiconductor
0
Marketplace
Obsolete
Tube
ObsoleteN-ChannelMOSFET (Metal Oxide)100 V39A (Tc)4.5V, 10V35mOhm @ 39A, 10V3V @ 250µA67 nC @ 10 V±16V1820 pF @ 25 V-145W (Tc)-55°C ~ 175°C (TJ)Surface MountD2PAK (TO-263)TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
ISL9N302AS3
AUIRFZ46NL
AUTOMOTIVE HEXFET N CHANNEL
International Rectifier
0
Marketplace
1 : $1.00000
Bulk
Bulk
ActiveN-ChannelMOSFET (Metal Oxide)55 V39A (Tc)10V16.5mOhm @ 28A, 10V4V @ 250µA72 nC @ 10 V±20V1696 pF @ 25 V-3.8W (Ta), 107W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-262TO-262-3 Long Leads, I²Pak, TO-262AA
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39A (Tc) Transistors - FETs, MOSFETs - Single


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.