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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
UJ4C075023K3S
UJ4C075044K3S
750V/44MOHM, SIC, CASCODE, G4, T
UnitedSiC
264
In Stock
1 : $12.17000
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ActiveN-ChannelSiCFET (Silicon Carbide)750 V37.4A (Tc)12V56mOhm @ 25A, 12V6V @ 10mA37.8 nC @ 15 V±20V1400 pF @ 400 V-203W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
UJ4SC075006K4S
UJ4C075044K4S
750V/44MOHM, SIC, CASCODE, G4, T
UnitedSiC
515
In Stock
1 : $12.71000
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ActiveN-ChannelSiCFET (Silicon Carbide)750 V37.4A (Tc)12V56mOhm @ 25A, 12V6V @ 10mA37.8 nC @ 15 V±20V1400 pF @ 400 V-203W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-4TO-247-4
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37.4A (Tc) Transistors - FETs, MOSFETs - Single


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.