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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
GA20JT12-263
G2R120MT33J
SIC MOSFET N-CH TO263-7
GeneSiC Semiconductor
152
In Stock
1 : $118.84000
Tube
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ActiveN-ChannelSiCFET (Silicon Carbide)3300 V35A20V156mOhm @ 20A, 20V-145 nC @ 20 V+25V, -10V3706 pF @ 1000 V---55°C ~ 175°C (TJ)Surface MountTO-263-7TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
TO-247-4
MSC400SMA330B4
MOSFET SIC 3300 V 400 MOHM TO-24
Microchip Technology
0
In Stock
1 : $34.29000
Bulk
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ActiveN-ChannelSiCFET (Silicon Carbide)3300 V11A (Tc)20V520mOhm @ 5A, 20V2.97V @ 1mA37 nC @ 20 V+23V, -10V579 pF @ 2400 V-131W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247-4TO-247-4
TO-247-4
MSC080SMA330B4
MOSFET SIC 3300 V 80 MOHM TO-247
Microchip Technology
0
In Stock
1 : $147.44000
Bulk
-
Bulk
ActiveN-ChannelSiCFET (Silicon Carbide)3300 V41A (Tc)20V105mOhm @ 30A, 20V2.97V @ 3mA55 nC @ 20 V+23V, -10V3462 pF @ 2400 V-381W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247-4TO-247-4
G2R50MT33K
G2R50MT33K
3300V 50M TO-247-4 SIC MOSFET
GeneSiC Semiconductor
0
In Stock
1 : $325.24000
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ActiveN-ChannelSiCFET (Silicon Carbide)3300 V63A (Tc)20V50mOhm @ 40A, 20V3.5V @ 10mA (Typ)340 nC @ 20 V+25V, -10V7301 pF @ 1000 VStandard536W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-4TO-247-4
GA20JT12-263
G2R1000MT33J
SIC MOSFET N-CH 4A TO263-7
GeneSiC Semiconductor
0
In Stock
1 : $20.56000
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ActiveN-ChannelSiCFET (Silicon Carbide)3300 V4A (Tc)20V1.2Ohm @ 2A, 20V3.5V @ 2mA21 nC @ 20 V+20V, -5V238 pF @ 1000 V-74W (Tc)-55°C ~ 175°C (TJ)Surface MountTO-263-7TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
TO-247-4
MSC025SMA330B4
MOSFET SIC 3300 V 25 MOHM TO-247
Microchip Technology
0
In Stock
Active
-
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ActiveN-ChannelSiCFET (Silicon Carbide)3300 V104A (Tc)20V31mOhm @ 40A, 20V2.7V @ 7mA410 nC @ 20 V+23V, -10V8720 pF @ 2640 V---55°C ~ 150°C (TJ)Through HoleTO-247-4TO-247-4
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3300 V Transistors - FETs, MOSFETs - Single


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.