30A (Ta), 100A (Tc) Single FETs, MOSFETs

Results: 15
Manufacturer
Diodes IncorporatedInfineon TechnologiesonsemiTaiwan Semiconductor Corporation
Series
-OptiMOS™PerFET™PowerTrench®
Packaging
BulkCut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveLast Time BuyObsolete
Drain to Source Voltage (Vdss)
20 V25 V30 V40 V60 V
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V4.5V, 10V6V, 10V7V, 10V10V
Rds On (Max) @ Id, Vgs
1.4mOhm @ 30A, 10V1.45mOhm @ 50A, 10V1.6mOhm @ 50A, 10V1.7mOhm @ 20A, 10V1.7mOhm @ 50A, 10V1.8mOhm @ 50A, 10V1.9mOhm @ 50A, 10V1.95mOhm @ 50A, 4.5V2mOhm @ 50A, 10V2.1mOhm @ 80A, 10V
Vgs(th) (Max) @ Id
1.2V @ 350µA2V @ 110µA2V @ 250µA2V @ 85µA2.8V @ 120µA2.8V @ 95µA3V @ 250µA3.6V @ 250µA4V @ 85µA
Gate Charge (Qg) (Max) @ Vgs
66 nC @ 5 V67 nC @ 10 V71 nC @ 10 V85 nC @ 4.5 V89 nC @ 10 V90 nC @ 10 V108 nC @ 10 V134 nC @ 10 V150 nC @ 10 V173 nC @ 10 V450 nC @ 10 V
Vgs (Max)
±12V±16V±20V
Input Capacitance (Ciss) (Max) @ Vds
4366 pF @ 15 V5200 pF @ 30 V5741 pF @ 15 V6500 pF @ 30 V8290 pF @ 15 V8800 pF @ 20 V9044 pF @ 25 V12000 pF @ 20 V13000 pF @ 10 V13000 pF @ 15 V24740 pF @ 25 V
Power Dissipation (Max)
1.1W1.3W (Ta), 113W (Tc)2.5W (Ta), 125W (Tc)2.5W (Ta), 139W (Tc)2.5W (Ta), 156W (Tc)2.8W (Ta), 104W (Tc)150W (Tc)306W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Mounting Type
Surface MountSurface Mount, Wettable FlankThrough Hole
Supplier Device Package
8-PDFNU (4.9x5.75)PG-TDSON-8 FLPG-TDSON-8-1PG-TDSON-8-17POWERDI3333-8PowerDI5060-8TO-3PN
Package / Case
8-PowerTDFN8-PowerVDFNTO-3P-3, SC-65-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
PG-TDSON-8 FL
BSC016N06NSATMA1
MOSFET N-CH 60V 30A/100A TDSON
Infineon Technologies
41,998
In Stock
1 : $2.53000
Cut Tape (CT)
5,000 : $1.09901
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)60 V30A (Ta), 100A (Tc)6V, 10V1.6mOhm @ 50A, 10V2.8V @ 95µA71 nC @ 10 V±20V5200 pF @ 30 V-2.5W (Ta), 139W (Tc)-55°C ~ 150°C (TJ)--Surface MountPG-TDSON-8 FL8-PowerTDFN
PG-TDSON-8-17
BSC014N06NSATMA1
MOSFET N-CH 60V 30A/100A TDSON7
Infineon Technologies
11,928
In Stock
1 : $3.45000
Cut Tape (CT)
5,000 : $1.61075
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)60 V30A (Ta), 100A (Tc)6V, 10V1.45mOhm @ 50A, 10V2.8V @ 120µA89 nC @ 10 V±20V6500 pF @ 30 V-2.5W (Ta), 156W (Tc)-55°C ~ 150°C (TJ)--Surface MountPG-TDSON-8-178-PowerTDFN
PG-TDSON-8-1
BSC018N04LSGATMA1
MOSFET N-CH 40V 30A/100A TDSON
Infineon Technologies
32,750
In Stock
1 : $1.52000
Cut Tape (CT)
5,000 : $0.66062
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)40 V30A (Ta), 100A (Tc)4.5V, 10V1.8mOhm @ 50A, 10V2V @ 85µA150 nC @ 10 V±20V12000 pF @ 20 V-2.5W (Ta), 125W (Tc)-55°C ~ 150°C (TJ)--Surface MountPG-TDSON-8-18-PowerTDFN
TQM019NH04CR RLG
TQM019NH04CR RLG
40V, 100A, SINGLE N-CHANNEL POWE
Taiwan Semiconductor Corporation
4,980
In Stock
1 : $2.98000
Cut Tape (CT)
2,500 : $1.34220
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)40 V30A (Ta), 100A (Tc)7V, 10V1.9mOhm @ 50A, 10V3.6V @ 250µA134 nC @ 10 V±20V9044 pF @ 25 V-150W (Tc)-55°C ~ 175°C (TJ)AutomotiveAEC-Q101Surface Mount, Wettable Flank8-PDFNU (4.9x5.75)8-PowerTDFN
PG-TDSON-8-1
BSC019N04NSGATMA1
MOSFET N-CH 40V 30A/100A TDSON
Infineon Technologies
0
In Stock
Check Lead Time
1 : $1.46000
Cut Tape (CT)
5,000 : $0.57444
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)40 V30A (Ta), 100A (Tc)10V1.9mOhm @ 50A, 10V4V @ 85µA108 nC @ 10 V±20V8800 pF @ 20 V-2.5W (Ta), 125W (Tc)-55°C ~ 150°C (TJ)--Surface MountPG-TDSON-8-18-PowerTDFN
PowerDI3333-8
DMT32M4LFG-7
MOSFET BVDSS: 25V~30V POWERDI333
Diodes Incorporated
0
In Stock
Check Lead Time
2,000 : $0.38106
Tape & Reel (TR)
-
Tape & Reel (TR)
ActiveN-ChannelMOSFET (Metal Oxide)30 V30A (Ta), 100A (Tc)4.5V, 10V1.7mOhm @ 20A, 10V3V @ 250µA67 nC @ 10 V±20V4366 pF @ 15 V-1.1W-55°C ~ 150°C (TJ)--Surface MountPOWERDI3333-88-PowerVDFN
PowerDI3333-8
DMT32M4LFG-13
MOSFET BVDSS: 25V~30V POWERDI333
Diodes Incorporated
0
In Stock
Check Lead Time
3,000 : $0.38106
Tape & Reel (TR)
-
Tape & Reel (TR)
ActiveN-ChannelMOSFET (Metal Oxide)30 V30A (Ta), 100A (Tc)4.5V, 10V1.7mOhm @ 20A, 10V3V @ 250µA67 nC @ 10 V±20V4366 pF @ 15 V-1.1W-55°C ~ 150°C (TJ)--Surface MountPOWERDI3333-88-PowerVDFN
DMPH4015SPSQ-13
DMT31M7LPS-13
MOSFET N-CH 30V 30A PWRDI5060
Diodes Incorporated
0
In Stock
10,000
Factory
Check Lead Time
2,500 : $0.50858
Tape & Reel (TR)
-
Tape & Reel (TR)
ActiveN-ChannelMOSFET (Metal Oxide)30 V30A (Ta), 100A (Tc)4.5V, 10V1.7mOhm @ 20A, 10V3V @ 250µA90 nC @ 10 V±20V5741 pF @ 15 V-1.3W (Ta), 113W (Tc)-55°C ~ 150°C (TJ)--Surface MountPowerDI5060-88-PowerTDFN
PowerDI5060-8
DMTH31M7LPSQ-13
MOSFET BVDSS: 25V~30V POWERDI506
Diodes Incorporated
0
In Stock
Check Lead Time
2,500 : $0.57310
Tape & Reel (TR)
-
Tape & Reel (TR)
ActiveN-ChannelMOSFET (Metal Oxide)30 V30A (Ta), 100A (Tc)4.5V, 10V1.7mOhm @ 20A, 10V3V @ 250µA90 nC @ 10 V±16V5741 pF @ 15 V-1.3W (Ta), 113W (Tc)-55°C ~ 175°C (TJ)AutomotiveAEC-Q101Surface MountPowerDI5060-88-PowerTDFN
PG-TDSON-8-1
BSC019N02KSGAUMA1
MOSFET N-CH 20V 30A/100A TDSON
Infineon Technologies
0
In Stock
5,000 : $0.90095
Tape & Reel (TR)
Tape & Reel (TR)
Last Time BuyN-ChannelMOSFET (Metal Oxide)20 V30A (Ta), 100A (Tc)2.5V, 4.5V1.95mOhm @ 50A, 4.5V1.2V @ 350µA85 nC @ 4.5 V±12V13000 pF @ 10 V-2.8W (Ta), 104W (Tc)-55°C ~ 150°C (TJ)--Surface MountPG-TDSON-8-18-PowerTDFN
TQM025NH04CR-V RLG
TQM019NH04CR-V RLG
40V, 100A, SINGLE N-CHANNEL POWE
Taiwan Semiconductor Corporation
0
In Stock
Check Lead Time
5,000 : $3.12250
Tape & Reel (TR)
Tape & Reel (TR)
ActiveN-ChannelMOSFET (Metal Oxide)40 V30A (Ta), 100A (Tc)7V, 10V1.9mOhm @ 50A, 10V3.6V @ 250µA134 nC @ 10 V±20V9044 pF @ 25 V-150W (Tc)-55°C ~ 175°C (TJ)AutomotiveAEC-Q101Surface Mount, Wettable Flank8-PDFNU (4.9x5.75)8-PowerTDFN
PG-TDSON-8-1
BSC020N025S G
MOSFET N-CH 25V 30A/100A TDSON
Infineon Technologies
0
In Stock
Obsolete
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ObsoleteN-ChannelMOSFET (Metal Oxide)25 V30A (Ta), 100A (Tc)4.5V, 10V2mOhm @ 50A, 10V2V @ 110µA66 nC @ 5 V±20V8290 pF @ 15 V-2.8W (Ta), 104W (Tc)-55°C ~ 150°C (TJ)--Surface MountPG-TDSON-8-18-PowerTDFN
TO-3P-3,TO-247-3
FDA8440
MOSFET N-CH 40V 30A/100A TO3PN
onsemi
0
In Stock
46,082
Marketplace
70 : $4.32000
Bulk
150 : $3.45000
Tube
Bulk
Tube
Tube
ObsoleteN-ChannelMOSFET (Metal Oxide)40 V30A (Ta), 100A (Tc)4.5V, 10V2.1mOhm @ 80A, 10V3V @ 250µA450 nC @ 10 V±20V24740 pF @ 25 V-306W (Tc)-55°C ~ 175°C (TJ)--Through HoleTO-3PNTO-3P-3, SC-65-3
PG-TDSON-8-1
BSC017N04NSGATMA1
MOSFET N-CH 40V 30A/100A TDSON
Infineon Technologies
0
In Stock
Obsolete
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ObsoleteN-ChannelMOSFET (Metal Oxide)40 V30A (Ta), 100A (Tc)10V1.7mOhm @ 50A, 10V4V @ 85µA108 nC @ 10 V±20V8800 pF @ 20 V-2.5W (Ta), 139W (Tc)-55°C ~ 150°C (TJ)--Surface MountPG-TDSON-8-18-PowerTDFN
PG-TDSON-8-1
BSC014N03MSGATMA1
MOSFET N-CH 30V 30A/100A TDSON
Infineon Technologies
0
In Stock
Obsolete
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ObsoleteN-ChannelMOSFET (Metal Oxide)30 V30A (Ta), 100A (Tc)4.5V, 10V1.4mOhm @ 30A, 10V2V @ 250µA173 nC @ 10 V±20V13000 pF @ 15 V-2.5W (Ta), 139W (Tc)-55°C ~ 150°C (TJ)--Surface MountPG-TDSON-8-18-PowerTDFN
Showing
of 15

30A (Ta), 100A (Tc) Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.