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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
U-DFN2020-6 Type F
DMP1005UFDF-7
MOSFET P-CH 12V 26A 6UDFN
Diodes Incorporated
418,677
In Stock
1 : $0.56000
Cut Tape (CT)
3,000 : $0.21889
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveP-ChannelMOSFET (Metal Oxide)12 V26A (Tc)1.8V, 4.5V8.5mOhm @ 5A, 4.5V1V @ 250µA47 nC @ 8 V±8V2475 pF @ 6 V-2.1W (Ta)-55°C ~ 150°C (TJ)Surface MountU-DFN2020-6 (Type F)6-UDFN Exposed Pad
840
In Stock
1 : $0.70000
Cut Tape (CT)
3,000 : $0.27013
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)60 V26A (Tc)4.5V, 10V11.4mOhm @ 13A, 10V2.5V @ 200µA17 nC @ 10 V±20V1625 pF @ 30 V-610mW (Ta), 61W (Tc)175°CSurface Mount8-TSON Advance (3.1x3.1)8-PowerVDFN
243,237
In Stock
1 : $0.92000
Cut Tape (CT)
2,500 : $0.42665
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveP-ChannelMOSFET (Metal Oxide)60 V26A (Tc)4.5V, 10V40mOhm @ 20A, 10V2.4V @ 250µA54 nC @ 10 V±20V3600 pF @ 30 V-2.5W (Ta), 60W (Tc)-55°C ~ 175°C (TJ)Surface MountTO-252 (DPAK)TO-252-3, DPak (2 Leads + Tab), SC-63
TO-220AB Full Pack
IRFI4227PBF
MOSFET N-CH 200V 26A TO220AB FP
Infineon Technologies
7,154
In Stock
1 : $3.63000
Tube
Tube
ActiveN-ChannelMOSFET (Metal Oxide)200 V26A (Tc)10V25mOhm @ 17A, 10V5V @ 250µA110 nC @ 10 V±30V4600 pF @ 25 V-46W (Tc)-40°C ~ 150°C (TJ)Through HoleTO-220AB Full-PakTO-220-3 Full Pack
TO-263AB
IXTA26P20P
MOSFET P-CH 200V 26A TO263
IXYS
9,895
In Stock
1 : $7.54000
Tube
Tube
ActiveP-ChannelMOSFET (Metal Oxide)200 V26A (Tc)10V170mOhm @ 13A, 10V4V @ 250µA56 nC @ 10 V±20V2740 pF @ 25 V-300W (Tc)-55°C ~ 175°C (TJ)Surface MountTO-263AATO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-220
IXTP26P20P
MOSFET P-CH 200V 26A TO220AB
IXYS
1,077
In Stock
1,150
Factory
1 : $7.74000
Tube
Tube
ActiveP-ChannelMOSFET (Metal Oxide)200 V26A (Tc)10V170mOhm @ 13A, 10V4V @ 250µA56 nC @ 10 V±20V2740 pF @ 25 V-300W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-220-3TO-220-3
LFPAK56/POWER-SO8/SOT669
BUK9Y40-55B,115
MOSFET N-CH 55V 26A LFPAK56
Nexperia USA Inc.
5,255
In Stock
1 : $0.92000
Cut Tape (CT)
1,500 : $0.39137
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)55 V26A (Tc)5V36mOhm @ 15A, 10V2V @ 1mA11 nC @ 5 V±15V1020 pF @ 25 V-59W (Tc)-55°C ~ 175°C (TJ)Surface MountLFPAK56, Power-SO8SC-100, SOT-669
TO-220-3
STP24NF10
MOSFET N-CH 100V 26A TO220AB
STMicroelectronics
1,998
In Stock
1 : $1.83000
Tube
Tube
ActiveN-ChannelMOSFET (Metal Oxide)100 V26A (Tc)10V60mOhm @ 12A, 10V4V @ 250µA41 nC @ 10 V±20V870 pF @ 25 V-85W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-220TO-220-3
TO-263AB
IXTA26P20P-TRL
MOSFET P-CH 200V 26A TO263
IXYS
3,851
In Stock
1 : $7.54000
Cut Tape (CT)
800 : $4.90990
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveP-ChannelMOSFET (Metal Oxide)200 V26A (Tc)10V170mOhm @ 13A, 10V4V @ 250µA56 nC @ 10 V±20V2740 pF @ 25 V-300W (Tc)-55°C ~ 150°C (TJ)Surface MountTO-263 (D2Pak)TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-3P
IXTQ26N50P
MOSFET N-CH 500V 26A TO3P
IXYS
194
In Stock
1 : $7.29000
Tube
Tube
ActiveN-ChannelMOSFET (Metal Oxide)500 V26A (Tc)10V230mOhm @ 13A, 10V5.5V @ 250µA65 nC @ 10 V±30V3600 pF @ 25 V-400W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-3PTO-3P-3, SC-65-3
TO-247_IXFH
IXFH26N50P
MOSFET N-CH 500V 26A TO247AD
IXYS
576
In Stock
1 : $8.92000
Tube
Tube
ActiveN-ChannelMOSFET (Metal Oxide)500 V26A (Tc)10V230mOhm @ 13A, 10V5.5V @ 4mA60 nC @ 10 V±30V3600 pF @ 25 V-400W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247AD (IXFH)TO-247-3
LFPAK33
BUK9M35-80EX
MOSFET N-CH 80V 26A LFPAK33
Nexperia USA Inc.
2,995
In Stock
1 : $1.00000
Cut Tape (CT)
1,500 : $0.42817
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)80 V26A (Tc)5V31mOhm @ 5A, 10V2.1V @ 1mA13.5 nC @ 5 V±10V1804 pF @ 25 V-62W (Tc)-55°C ~ 175°C (TJ)Surface MountLFPAK33SOT-1210, 8-LFPAK33 (5-Lead)
PG-TO-220-FP
IPA60R120P7XKSA1
MOSFET N-CH 600V 26A TO220
Infineon Technologies
398
In Stock
1 : $4.56000
Tube
Tube
ActiveN-ChannelMOSFET (Metal Oxide)600 V26A (Tc)10V120mOhm @ 8.2A, 10V4V @ 410µA36 nC @ 10 V±20V1544 pF @ 400 V-28W (Tc)-55°C ~ 150°C (TJ)Through HolePG-TO220 Full PackTO-220-3 Full Pack
TO-220
IXFP26N30X3
MOSFET N-CH 300V 26A TO220AB
IXYS
596
In Stock
1 : $4.68000
Tube
Tube
ActiveN-ChannelMOSFET (Metal Oxide)300 V26A (Tc)10V66mOhm @ 13A, 10V4.5V @ 500µA22 nC @ 10 V±20V1465 pF @ 25 V-170W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-220-3TO-220-3
TO-247-AD-EP-(H)
IXTH26P20P
MOSFET P-CH 200V 26A TO247
IXYS
291
In Stock
1 : $6.55000
Tube
Tube
ActiveP-ChannelMOSFET (Metal Oxide)200 V26A (Tc)10V170mOhm @ 13A, 10V4V @ 250µA56 nC @ 10 V±20V2740 pF @ 25 V-300W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247 (IXTH)TO-247-3
CoolSiC_MOSFET
IMBG120R090M1HXTMA1
SICFET N-CH 1.2KV 26A TO263
Infineon Technologies
1,993
In Stock
1 : $14.26000
Cut Tape (CT)
1,000 : $10.33182
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelSiCFET (Silicon Carbide)1200 V26A (Tc)-125mOhm @ 8.5A, 18V5.7V @ 3.7mA23 nC @ 18 V+18V, -15V763 pF @ 800 VStandard136W (Tc)-55°C ~ 175°C (TJ)Surface MountPG-TO263-7-12TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
TO-247-3 AC EP
IRFP26N60LPBF
MOSFET N-CH 600V 26A TO247-3
Vishay Siliconix
1,836
In Stock
1 : $10.95000
Tube
-
Tube
ActiveN-ChannelMOSFET (Metal Oxide)600 V26A (Tc)10V250mOhm @ 16A, 10V5V @ 250µA180 nC @ 10 V±30V5020 pF @ 25 V-470W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247ACTO-247-3
MOSFETTO247
IMW65R072M1HXKSA1
MOSFET 650V NCH SIC TRENCH
Infineon Technologies
160
In Stock
1 : $13.33000
Tube
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)650 V26A (Tc)18V94mOhm @ 13.3A, 18V5.7V @ 4mA22 nC @ 18 V+23V, -5V744 pF @ 400 V-96W (Tc)-55°C ~ 150°C (TJ)Through HolePG-TO247-3-41TO-247-3
MOSFETTO247
IMZ120R090M1HXKSA1
SICFET N-CH 1.2KV 26A TO247-4
Infineon Technologies
773
In Stock
1 : $14.83000
Tube
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)1200 V26A (Tc)15V, 18V117mOhm @ 8.5A, 18V5.7V @ 3.7mA21 nC @ 18 V+23V, -7V707 pF @ 800 V-115W (Tc)-55°C ~ 175°C (TJ)Through HolePG-TO247-4-1TO-247-4
TO-247_IXFH
IXFH26N100X
MOSFET N-CH 1000V 26A TO247
IXYS
209
In Stock
1 : $19.59000
Tube
Tube
ActiveN-ChannelMOSFET (Metal Oxide)1000 V26A (Tc)10V320mOhm @ 13A, 10V6V @ 4mA113 nC @ 10 V±30V3290 pF @ 25 V-860W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247TO-247-3
TO-264
IXFK26N120P
MOSFET N-CH 1200V 26A TO264AA
IXYS
233
In Stock
1 : $39.83000
Tube
Tube
ActiveN-ChannelMOSFET (Metal Oxide)1200 V26A (Tc)10V460mOhm @ 13A, 10V6.5V @ 1mA225 nC @ 10 V±30V16000 pF @ 25 V-960W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-264AA (IXFK)TO-264-3, TO-264AA
APT2X60D60J
APT12040JVR
MOSFET N-CH 1200V 26A SOT227
Microchip Technology
88
In Stock
1 : $104.23000
Tube
Tube
ActiveN-ChannelMOSFET (Metal Oxide)1200 V26A (Tc)10V400mOhm @ 13A, 10V4V @ 5mA1200 nC @ 10 V±30V18000 pF @ 25 V-700W (Tc)-55°C ~ 150°C (TJ)Chassis MountSOT-227 (ISOTOP®)SOT-227-4, miniBLOC
1,997
In Stock
1 : $3.51000
Tube
-
Tube
ActiveN-ChannelMOSFET (Metal Oxide)500 V26A (Tc)10V145mOhm @ 12A, 10V4V @ 250µA86 nC @ 10 V±30V1980 pF @ 100 V-250W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-220ABTO-220-3
TO-3P
IXTQ26P20P
MOSFET P-CH 200V 26A TO3P
IXYS
260
In Stock
1 : $8.27000
Tube
Tube
ActiveP-ChannelMOSFET (Metal Oxide)200 V26A (Tc)10V170mOhm @ 13A, 10V4V @ 250µA56 nC @ 10 V±20V2740 pF @ 25 V-300W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-3PTO-3P-3, SC-65-3
TO-220
IXFP26N50P3
MOSFET N-CH 500V 26A TO220AB
IXYS
136
In Stock
1,150
Factory
1 : $10.07000
Tube
Tube
ActiveN-ChannelMOSFET (Metal Oxide)500 V26A (Tc)10V230mOhm @ 13A, 10V5V @ 4mA42 nC @ 10 V±30V2220 pF @ 25 V-500W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-220-3TO-220-3
Showing
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of 145

26A (Tc) Transistors - FETs, MOSFETs - Single


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.