1700 V Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

SCT2750NYTB SICFET N-CH 1700V 5.9A TO268 Rohm Semiconductor	0 In Stock Check Lead Time	1 : $6.99000 Cut Tape (CT) 400 : $4.99085 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	5.9A (Tc)	18V	975mOhm @ 1.7A, 18V	4V @ 630µA	17 nC @ 18 V	+22V, -6V	275 pF @ 800 V	-	57W (Tc)	175°C (TJ)	Surface Mount	TO-268	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
IMBF170R650M1XTMA1 SICFET N-CH 1700V 7.4A TO263-7 Infineon Technologies	1,204 In Stock	1 : $7.46000 Cut Tape (CT) 1,000 : $4.23166 Tape & Reel (TR)	CoolSiC™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	7.4A (Tc)	12V, 15V	650mOhm @ 1.5A, 15V	5.7V @ 1.7mA	8 nC @ 12 V	+20V, -10V	422 pF @ 1000 V	-	88W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-7-13	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
G2R1000MT17D SIC MOSFET N-CH 4A TO247-3 GeneSiC Semiconductor	4,351 In Stock	1 : $5.44000 Tube	G2R™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	5A (Tc)	20V	1.2Ohm @ 2A, 20V	5.5V @ 500µA	11 nC @ 20 V	+25V, -10V	111 pF @ 1000 V	-	44W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
G2R1000MT17J SIC MOSFET N-CH 3A TO263-7 GeneSiC Semiconductor	15,238 In Stock	1 : $6.44000 Tube	G2R™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	3A (Tc)	20V	1.2Ohm @ 2A, 20V	4V @ 2mA	-	+20V, -10V	139 pF @ 1000 V	-	54W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-7	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
G3R450MT17J SIC MOSFET N-CH 9A TO263-7 GeneSiC Semiconductor	8,423 In Stock	1 : $8.04000 Tube	G3R™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	9A (Tc)	15V	585mOhm @ 4A, 15V	2.7V @ 2mA	18 nC @ 15 V	±15V	454 pF @ 1000 V	-	91W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-7	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
UF3C170400K3S SICFET N-CH 1700V 7.6A TO247-3 UnitedSiC	15,551 In Stock	1 : $9.05000 Tube	-	Tube	Active	N-Channel	SiCFET (Cascode SiCJFET)	1700 V	7.6A (Tc)	12V	515mOhm @ 5A, 12V	6V @ 10mA	27.5 nC @ 15 V	±25V	740 pF @ 100 V	-	100W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
G3R160MT17D SIC MOSFET N-CH 21A TO247-3 GeneSiC Semiconductor	1,358 In Stock	1 : $12.24000 Tube	G3R™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	21A (Tc)	15V	208mOhm @ 12A, 15V	2.7V @ 5mA	51 nC @ 15 V	±15V	1272 pF @ 1000 V	-	175W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
G3R160MT17J SIC MOSFET N-CH 22A TO263-7 GeneSiC Semiconductor	217 In Stock	1 : $12.98000 Tube	G3R™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	22A (Tc)	15V	208mOhm @ 12A, 15V	2.7V @ 5mA	51 nC @ 15 V	±15V	1272 pF @ 1000 V	-	187W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-7	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
G3R45MT17K SIC MOSFET N-CH 61A TO247-4 GeneSiC Semiconductor	1,003 In Stock	1 : $33.07000 Tube	G3R™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	61A (Tc)	15V	58mOhm @ 40A, 15V	2.7V @ 8mA	182 nC @ 15 V	±15V	4523 pF @ 1000 V	-	438W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4	TO-247-4
G3R20MT17K SIC MOSFET N-CH 124A TO247-4 GeneSiC Semiconductor	280 In Stock	1 : $107.20000 Tube	G3R™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	124A (Tc)	15V	26mOhm @ 75A, 15V	2.7V @ 15mA	400 nC @ 15 V	±15V	10187 pF @ 1000 V	-	809W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4	TO-247-4
MSC750SMA170B4 TRANS SJT 1700V TO247-4 Microchip Technology	187 In Stock	1 : $5.61000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	7A (Tc)	20V	940mOhm @ 2.5A, 20V	3.25V @ 100µA (Typ)	11 nC @ 20 V	+23V, -10V	184 pF @ 1360 V	-	68W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4	TO-247-4
C2M1000170J-TR SICFET N-CH 1700V 5.3A D2PAK-7 Wolfspeed, Inc.	7,200 In Stock	800 : $6.49450 Tape & Reel (TR)	C2M™	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	5.3A (Tc)	20V	1.4Ohm @ 2A, 20V	3.1V @ 500µA (Typ)	13 nC @ 20 V	+25V, -10V	200 pF @ 1000 V	-	78W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	TO-263-7	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
G3R450MT17D SIC MOSFET N-CH 9A TO247-3 GeneSiC Semiconductor	1,757 In Stock	1 : $7.21000 Tube	G3R™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	9A (Tc)	15V	585mOhm @ 4A, 15V	2.7V @ 2mA	18 nC @ 15 V	±15V	454 pF @ 1000 V	-	88W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
C2M1000170D SICFET N-CH 1700V 4.9A TO247-3 Wolfspeed, Inc.	7,023 In Stock	1 : $9.38000 Tube	Z-FET™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	4.9A (Tc)	20V	1.1Ohm @ 2A, 20V	2.4V @ 100µA	13 nC @ 20 V	+25V, -10V	191 pF @ 1000 V	-	69W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
C2M1000170J SICFET N-CH 1700V 5.3A D2PAK Wolfspeed, Inc.	8,573 In Stock	1 : $9.97000 Bulk	C2M™	Bulk	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	5.3A (Tc)	20V	1.4Ohm @ 2A, 20V	3.1V @ 500µA (Typ)	13 nC @ 20 V	+25V, -10V	200 pF @ 1000 V	-	78W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK (7-Lead)	TO-263-7 (Straight Leads)
C2M0045170D SICFET N-CH 1700V 72A TO247-3 Wolfspeed, Inc.	298 In Stock	1 : $101.37000 Tube	C2M™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	72A (Tc)	20V	70mOhm @ 50A, 20V	4V @ 18mA	188 nC @ 20 V	+25V, -10V	3672 pF @ 1000 V	-	520W (Tc)	-40°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
G3R20MT17N SIC MOSFET N-CH 100A SOT227 GeneSiC Semiconductor	109 In Stock	1 : $135.46000 Tube	G3R™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	100A (Tc)	15V	26mOhm @ 75A, 15V	2.7V @ 15mA	400 nC @ 15 V	±15V	10187 pF @ 1000 V	-	523W (Tc)	-55°C ~ 175°C (TJ)	Chassis Mount	SOT-227	SOT-227-4, miniBLOC
MSC750SMA170S TRANS SJT 1700V D3PAK Microchip Technology	302 In Stock	1 : $6.19000 Tube	-	Tube	Active	-	SiCFET (Silicon Carbide)	1700 V	6A (Tc)	-	-	-	-	-	-	-	-	-	Surface Mount	D3PAK	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
LSIC1MO170T0750 SICFET N-CH 1700V 6.4A TO263-7L Littelfuse Inc.	1,163 In Stock	1 : $9.87000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	6.4A (Tc)	20V	1Ohm @ 2A, 20V	4V @ 1mA	11 nC @ 20 V	+22V, -6V	200 pF @ 1000 V	-	65W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-7L	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
IMBF170R1K0M1XTMA1 SICFET N-CH 1700V 5.2A TO263-7 Infineon Technologies	741 In Stock	1 : $6.85000 Cut Tape (CT) 1,000 : $3.62008 Tape & Reel (TR)	CoolSiC™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	5.2A (Tc)	12V, 15V	1000mOhm @ 1A, 15V	5.7V @ 1.1mA	5 nC @ 12 V	+20V, -10V	275 pF @ 1000 V	-	68W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-7-13	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
IXFN90N170SK SICFET N-CH 1700V 90A SOT227B IXYS	6 In Stock	1 : $331.65000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	90A (Tc)	20V	35mOhm @ 100A, 20V	4V @ 36mA	376 nC @ 20 V	+20V, -5V	7340 pF @ 1000 V	-	-	-40°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
SCT2H12NYTB SICFET N-CH 1700V 4A TO268 Rohm Semiconductor	0 In Stock Check Lead Time	1 : $6.64000 Cut Tape (CT) 400 : $4.63870 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	4A (Tc)	18V	1.5Ohm @ 1.1A, 18V	4V @ 410µA	14 nC @ 18 V	+22V, -6V	184 pF @ 800 V	-	44W (Tc)	175°C (TJ)	Surface Mount	TO-268	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
STW3N170 MOSFET N-CH 1700V 2.6A TO247-3 STMicroelectronics	0 In Stock Check Lead Time	1 : $5.56000 Tube	PowerMESH™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1700 V	2.6A (Tc)	10V	13Ohm @ 1.3A, 10V	5V @ 250µA	44 nC @ 10 V	±30V	1100 pF @ 100 V	-	160mW	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
IXTT2N170D2 MOSFET N-CH 1700V 2A TO268 IXYS	0 In Stock Check Lead Time	1 : $26.16000 Tube	Depletion	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1700 V	2A (Tj)	-	6.5Ohm @ 1A, 0V	-	110 nC @ 5 V	±20V	3650 pF @ 25 V	Depletion Mode	568W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	TO-268AA	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
G3R45MT17D SIC MOSFET N-CH 61A TO247-3 GeneSiC Semiconductor	0 In Stock Check Lead Time	1 : $32.73000 Tube	G3R™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	61A (Tc)	15V	58mOhm @ 40A, 15V	2.7V @ 8mA	182 nC @ 15 V	±15V	4523 pF @ 1000 V	-	438W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.

1700 V Single FETs, MOSFETs

1700 V Single FETs, MOSFETs

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