Showing
1 - 25
of 473
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-247N
SCT3160KLGC11
SICFET N-CH 1200V 17A TO247N
Rohm Semiconductor
1,229
In Stock
1 : $10.99000
Tube
-
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)1200 V17A (Tc)18V208mOhm @ 5A, 18V5.6V @ 2.5mA42 nC @ 18 V+22V, -4V398 pF @ 800 V-103W (Tc)175°C (TJ)Through HoleTO-247NTO-247-3
TO-247N
SCT3080KLGC11
SICFET N-CH 1200V 31A TO247N
Rohm Semiconductor
660
In Stock
1 : $22.11000
Tube
-
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)1200 V31A (Tc)18V104mOhm @ 10A, 18V5.6V @ 5mA60 nC @ 18 V+22V, -4V785 pF @ 800 V-165W (Tc)175°C (TJ)Through HoleTO-247NTO-247-3
SCT3105KRC14-front
SCT3040KRC14
SICFET N-CH 1200V 55A TO247-4L
Rohm Semiconductor
197
In Stock
1 : $56.59000
Tube
-
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)1200 V55A (Tc)18V52mOhm @ 20A, 18V5.6V @ 10mA107 nC @ 18 V+22V, -4V1337 pF @ 800 V-262W175°C (TJ)Through HoleTO-247-4LTO-247-4
TO-247N
SCT3040KLHRC11
SICFET N-CH 1200V 55A TO247N
Rohm Semiconductor
656
In Stock
1 : $59.02000
Tube
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)1200 V55A (Ta)18V52mOhm @ 20A, 18V5.6V @ 10mA107 nC @ 18 V+22V, -4V1337 pF @ 800 V-262W175°C (TJ)Through HoleTO-247NTO-247-3
TO-247N
SCT3030KLGC11
SICFET N-CH 1200V 72A TO247N
Rohm Semiconductor
1,051
In Stock
1 : $84.94000
Tube
-
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)1200 V72A (Tc)18V39mOhm @ 27A, 18V5.6V @ 13.3mA131 nC @ 18 V+22V, -4V2222 pF @ 800 V-339W (Tc)175°C (TJ)Through HoleTO-247NTO-247-3
GA20JT12-263
G3R350MT12J
SIC MOSFET N-CH 11A TO263-7
GeneSiC Semiconductor
6,752
In Stock
1 : $6.06000
Tube
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)1200 V11A (Tc)15V420mOhm @ 4A, 15V2.69V @ 2mA12 nC @ 15 V±15V334 pF @ 800 V-75W (Tc)-55°C ~ 175°C (TJ)Surface MountTO-263-7TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
G2R1000MT17D
G3R160MT12D
SIC MOSFET N-CH 22A TO247-3
GeneSiC Semiconductor
1,648
In Stock
1 : $7.18000
Tube
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)1200 V22A (Tc)15V192mOhm @ 10A, 15V2.69V @ 5mA28 nC @ 15 V±15V730 pF @ 800 V-123W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
G2R1000MT17D
G3R75MT12D
SIC MOSFET N-CH 41A TO247-3
GeneSiC Semiconductor
4,097
In Stock
1 : $11.55000
Tube
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)1200 V41A (Tc)15V90mOhm @ 20A, 15V2.69V @ 7.5mA54 nC @ 15 V±15V1560 pF @ 800 V-207W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
TO-247-4 Top
G3R75MT12K
SIC MOSFET N-CH 41A TO247-4
GeneSiC Semiconductor
845
In Stock
1 : $11.85000
Tube
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)1200 V41A (Tc)15V90mOhm @ 20A, 15V2.69V @ 7.5mA54 nC @ 15 V±15V1560 pF @ 800 V-207W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-4TO-247-4
GA20JT12-263
G3R75MT12J
SIC MOSFET N-CH 42A TO263-7
GeneSiC Semiconductor
2,490
In Stock
1 : $12.13000
Tube
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)1200 V42A (Tc)15V90mOhm @ 20A, 15V2.69V @ 7.5mA54 nC @ 15 V±15V1560 pF @ 800 V-224W (Tc)-55°C ~ 175°C (TJ)Surface MountTO-263-7TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
TO-247-3L
UF3C120080K3S
SICFET N-CH 1200V 33A TO247-3
UnitedSiC
19,063
In Stock
1 : $15.92000
Tube
-
Tube
ActiveN-ChannelSiCFET (Cascode SiCJFET)1200 V33A (Tc)12V100mOhm @ 20A, 12V6V @ 10mA51 nC @ 15 V±25V1500 pF @ 100 V-254.2W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
TO-247-3L
UJ3C120080K3S
SICFET N-CH 1200V 33A TO247-3
UnitedSiC
7,863
In Stock
1 : $15.94000
Tube
-
Tube
Not For New DesignsN-ChannelSiCFET (Cascode SiCJFET)1200 V33A (Tc)12V100mOhm @ 20A, 12V6V @ 10mA51 nC @ 15 V±25V1500 pF @ 100 V-254.2W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
G2R1000MT17D
G3R40MT12D
SIC MOSFET N-CH 71A TO247-3
GeneSiC Semiconductor
1,620
In Stock
1 : $19.16000
Tube
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)1200 V71A (Tc)15V48mOhm @ 35A, 15V2.69V @ 10mA106 nC @ 15 V±15V2929 pF @ 800 V-333W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
TO-247-4 Top
G3R40MT12K
SIC MOSFET N-CH 71A TO247-4
GeneSiC Semiconductor
1,193
In Stock
1 : $19.44000
Tube
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)1200 V71A (Tc)15V48mOhm @ 35A, 15V2.69V @ 10mA106 nC @ 15 V±15V2929 pF @ 800 V-333W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-4TO-247-4
GA20JT12-263
G3R40MT12J
SIC MOSFET N-CH 75A TO263-7
GeneSiC Semiconductor
664
In Stock
1 : $19.77000
Tube
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)1200 V75A (Tc)15V48mOhm @ 35A, 15V2.69V @ 10mA106 nC @ 15 V±15V2929 pF @ 800 V-374W (Tc)-55°C ~ 175°C (TJ)Surface MountTO-263-7TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
TO-247_IXFH
IXFH16N120P
MOSFET N-CH 1200V 16A TO247AD
IXYS
261
In Stock
1 : $22.29000
Tube
Tube
ActiveN-ChannelMOSFET (Metal Oxide)1200 V16A (Tc)10V950mOhm @ 8A, 10V6.5V @ 1mA120 nC @ 10 V±30V6900 pF @ 25 V-660W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247AD (IXFH)TO-247-3
TO-247-3 AD Long Lead EP
LSIC1MO120E0080
SICFET N-CH 1200V 39A TO247-3
Littelfuse Inc.
523
In Stock
1 : $22.76000
Tube
-
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)1200 V39A (Tc)20V100mOhm @ 20A, 20V4V @ 10mA95 nC @ 20 V+22V, -6V1825 pF @ 800 V-179W (Tc)-55°C ~ 150°CThrough HoleTO-247ADTO-247-3
TO-247-4 Top
G3R30MT12K
SIC MOSFET N-CH 90A TO247-4
GeneSiC Semiconductor
2,543
In Stock
1 : $24.79000
Tube
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)1200 V90A (Tc)15V36mOhm @ 50A, 15V2.69V @ 12mA155 nC @ 15 V±15V3901 pF @ 800 V-400W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-4TO-247-4
GA20JT12-263
G3R30MT12J
SIC MOSFET N-CH 96A TO263-7
GeneSiC Semiconductor
437
In Stock
1 : $25.11000
Tube
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)1200 V96A (Tc)15V36mOhm @ 50A, 15V2.69V @ 12mA155 nC @ 15 V±15V3901 pF @ 800 V-459W (Tc)-55°C ~ 175°C (TJ)Surface MountTO-263-7TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
TO-247N
SCT3080KLHRC11
SICFET N-CH 1200V 31A TO247N
Rohm Semiconductor
149
In Stock
1 : $27.95000
Tube
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)1200 V31A (Tc)18V104mOhm @ 10A, 18V5.6V @ 5mA60 nC @ 18 V+22V, -4V785 pF @ 800 V-165W175°C (TJ)Through HoleTO-247NTO-247-3
IMW120Rxx0M1HXKSA1
IMW120R030M1HXKSA1
SICFET N-CH 1.2KV 56A TO247-3
Infineon Technologies
129
In Stock
1 : $28.15000
Tube
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)1200 V56A (Tc)15V, 18V40mOhm @ 25A, 18V5.7V @ 10mA63 nC @ 18 V+23V, -7V2120 pF @ 800 V-227W (Tc)-55°C ~ 175°C (TJ)Through HolePG-TO247-3-41TO-247-3
TO-247-3L
UJ3C120040K3S
SICFET N-CH 1200V 65A TO247-3
UnitedSiC
1,972
In Stock
1 : $29.30000
Tube
-
Tube
ActiveN-ChannelSiCFET (Cascode SiCJFET)1200 V65A (Tc)12V45mOhm @ 40A, 12V6V @ 10mA51 nC @ 15 V±25V1500 pF @ 100 V-429W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
TO-247-3L
UF3C120040K3S
SICFET N-CH 1200V 65A TO247-3
UnitedSiC
37,053
In Stock
1 : $29.30000
Tube
-
Tube
ActiveN-ChannelSiCFET (Cascode SiCJFET)1200 V65A (Tc)12V45mOhm @ 40A, 12V6V @ 10mA51 nC @ 15 V±25V1500 pF @ 100 V-429W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
NTH4L022N120M3S
NTH4L022N120M3S
SIC MOS TO247-4L 22MOHM 1200V
onsemi
154
In Stock
1 : $36.15000
Tube
-
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)1200 V68A (Tc)18V30mOhm @ 40A, 18V4.4V @ 20mA151 nC @ 18 V+22V, -10V3175 pF @ 800 V-352W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-4LTO-247-4
TO-247-4 Top
G3R20MT12K
SIC MOSFET N-CH 128A TO247-4
GeneSiC Semiconductor
625
In Stock
1 : $39.70000
Tube
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)1200 V128A (Tc)15V24mOhm @ 60A, 15V2.69V @ 15mA219 nC @ 15 V±15V5873 pF @ 800 V-542W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-4TO-247-4
Showing
1 - 25
of 473

1200 V Transistors - FETs, MOSFETs - Single


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.