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Mfr Part #
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Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
33,491
In Stock
1 : $0.51000
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3,000 : $0.19607
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ActiveP-ChannelMOSFET (Metal Oxide)30 V11A (Ta)4.5V, 10V17mOhm @ 11A, 10V2.3V @ 250µA34 nC @ 10 V±25V1180 pF @ 15 V-3.1W (Ta)-55°C ~ 150°C (TJ)Surface Mount8-SOIC8-SOIC (0.154", 3.90mm Width)
8-SOIC
IRF8707TRPBF
MOSFET N-CH 30V 11A 8SO
Infineon Technologies
35,961
In Stock
1 : $0.65000
Cut Tape (CT)
4,000 : $0.22878
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Tape & Reel (TR)
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ActiveN-ChannelMOSFET (Metal Oxide)30 V11A (Ta)4.5V, 10V11.9mOhm @ 11A, 10V2.35V @ 25µA9.3 nC @ 4.5 V±20V760 pF @ 15 V-2.5W (Ta)-55°C ~ 150°C (TJ)Surface Mount8-SO8-SOIC (0.154", 3.90mm Width)
8-SOIC
FDS6675BZ
MOSFET P-CH 30V 11A 8SOIC
onsemi
31,481
In Stock
1 : $0.95000
Cut Tape (CT)
2,500 : $0.36688
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ActiveP-ChannelMOSFET (Metal Oxide)30 V11A (Ta)4.5V, 10V13mOhm @ 11A, 10V3V @ 250µA62 nC @ 10 V±25V2470 pF @ 15 V-2.5W (Ta)-55°C ~ 150°C (TJ)Surface Mount8-SOIC8-SOIC (0.154", 3.90mm Width)
8-SOIC
RS3L110ATTB1
PCH -60V -11A POWER MOSFET - RS3
Rohm Semiconductor
5,717
In Stock
1 : $2.48000
Cut Tape (CT)
2,500 : $1.24510
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ActiveP-ChannelMOSFET (Metal Oxide)60 V11A (Ta)4.5V, 10V12.8mOhm @ 11A, 10V2.5V @ 1mA115 nC @ 10 V±20V6300 pF @ 30 V-1.4W (Ta)150°C (TJ)Surface Mount8-SOP8-SOIC (0.154", 3.90mm Width)
8-SO
DMS3015SSS-13
MOSFET N-CH 30V 11A 8SO
Diodes Incorporated
28,057
In Stock
1 : $0.46000
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2,500 : $0.17789
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ActiveN-ChannelMOSFET (Metal Oxide)30 V11A (Ta)4.5V, 10V11.9mOhm @ 11A, 10V2.5V @ 250µA30.6 nC @ 10 V±12V1276 pF @ 15 VSchottky Diode (Body)1.55W (Ta)-55°C ~ 150°C (TJ)Surface Mount8-SO8-SOIC (0.154", 3.90mm Width)
8-SOIC
FDS6690A
MOSFET N-CH 30V 11A 8SOIC
onsemi
5,757
In Stock
1 : $0.86000
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2,500 : $0.32123
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ActiveN-ChannelMOSFET (Metal Oxide)30 V11A (Ta)4.5V, 10V12.5mOhm @ 11A, 10V3V @ 250µA16 nC @ 5 V±20V1205 pF @ 15 V-2.5W (Ta)-55°C ~ 150°C (TJ)Surface Mount8-SOIC8-SOIC (0.154", 3.90mm Width)
8-SOIC
IRF7807ZTRPBF
MOSFET N-CH 30V 11A 8SO
Infineon Technologies
13,943
In Stock
1 : $0.91000
Cut Tape (CT)
4,000 : $0.36610
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Tape & Reel (TR)
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Not For New DesignsN-ChannelMOSFET (Metal Oxide)30 V11A (Ta)4.5V, 10V13.8mOhm @ 11A, 10V2.25V @ 250µA11 nC @ 4.5 V±20V770 pF @ 15 V-2.5W (Ta)-55°C ~ 150°C (TJ)Surface Mount8-SO8-SOIC (0.154", 3.90mm Width)
6,830
In Stock
1 : $0.93000
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2,500 : $0.39186
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ActiveP-ChannelMOSFET (Metal Oxide)30 V11A (Ta)4.5V, 10V20mOhm @ 11A, 10V3V @ 250µA80 nC @ 10 V20V3100 pF @ 8 V-2.5W (Ta)-55°C ~ 150°C (TJ)Surface Mount8-SOIC8-SOIC (0.154", 3.90mm Width)
8-SOIC
SI4866DY-T1-E3
MOSFET N-CH 12V 11A 8SO
Vishay Siliconix
7,158
In Stock
1 : $2.41000
Cut Tape (CT)
2,500 : $1.10228
Tape & Reel (TR)
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ActiveN-ChannelMOSFET (Metal Oxide)12 V11A (Ta)2.5V, 4.5V5.5mOhm @ 17A, 4.5V600mV @ 250µA (Min)30 nC @ 4.5 V±8V--1.6W (Ta)-55°C ~ 150°C (TJ)Surface Mount8-SOIC8-SOIC (0.154", 3.90mm Width)
HUML2020L8
RF4E110GNTR
MOSFET N-CH 30V 11A HUML2020L8
Rohm Semiconductor
4,792
In Stock
1 : $0.56000
Cut Tape (CT)
3,000 : $0.19693
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-
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ActiveN-ChannelMOSFET (Metal Oxide)30 V11A (Ta)4.5V, 10V11.3mOhm @ 11A, 10V2.5V @ 250µA7.4 nC @ 10 V±20V504 pF @ 15 V-2W (Ta)150°C (TJ)Surface MountHUML2020L88-PowerUDFN
8-SOIC
SI4386DY-T1-E3
MOSFET N-CH 30V 11A 8SO
Vishay Siliconix
3,902
In Stock
1 : $1.53000
Cut Tape (CT)
2,500 : $0.64867
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Tape & Reel (TR)
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ActiveN-ChannelMOSFET (Metal Oxide)30 V11A (Ta)4.5V, 10V7mOhm @ 16A, 10V2.5V @ 250µA18 nC @ 4.5 V±20V--1.47W (Ta)-55°C ~ 150°C (TJ)Surface Mount8-SOIC8-SOIC (0.154", 3.90mm Width)
PMPB15ENEX
PMPB15ENEX
SMALL SIGNAL MOSFET FOR MOBILE
Nexperia USA Inc.
3,000
In Stock
1 : $0.52000
Cut Tape (CT)
3,000 : $0.14922
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-
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ActiveN-ChannelMOSFET (Metal Oxide)30 V11A (Ta)10V22mOhm @ 7A, 10V2.5V @ 250µA14 nC @ 10 V±20V440 pF @ 15 V-1.6W (Ta)-55°C ~ 150°C (TJ)Surface MountDFN2020MD-66-UDFN Exposed Pad
PMCA14UNYL
PMCA14UNYL
SMALL SIGNAL MOSFET FOR MOBILE
Nexperia USA Inc.
5,000
In Stock
5,000 : $0.17509
Tape & Reel (TR)
Tape & Reel (TR)
ActiveN-ChannelMOSFET (Metal Oxide)12 V11A (Ta)1.8V, 4.5V16mOhm @ 5A, 4.5V900mV @ 250µA12 nC @ 3.3 V±8V855 pF @ 6 V-1.2W (Ta), 31W (Tc)-55°C ~ 150°C (TJ)Surface MountDSN1010-33-XDFN
6-DFN2020MD_View 2
PMPB08R5XNX
PMPB08R5XN/SOT1220-2/DFN2020M-
Nexperia USA Inc.
5,990
In Stock
1 : $0.54000
Cut Tape (CT)
3,000 : $0.19091
Tape & Reel (TR)
-
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ActiveN-ChannelMOSFET (Metal Oxide)30 V11A (Ta)1.8V, 4.5V10mOhm @ 11A, 4.5V1V @ 250µA30 nC @ 4.5 V±12V1774 pF @ 15 V-1.9W (Ta), 12.5W (Tc)-55°C ~ 150°C (TJ)Surface MountDFN2020M-66-UDFN Exposed Pad
4,590
In Stock
1 : $0.65000
Cut Tape (CT)
2,500 : $0.23110
Tape & Reel (TR)
-
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ActiveN-ChannelMOSFET (Metal Oxide)30 V11A (Ta)4.5V, 10V20mOhm @ 11A, 10V3V @ 250µA6.3 nC @ 5 V20V860 pF @ 15 V-2.5W (Ta)-55°C ~ 150°C (TJ)Surface Mount8-SOIC8-SOIC (0.154", 3.90mm Width)
2,500
In Stock
2,500 : $0.66132
Tape & Reel (TR)
-
Tape & Reel (TR)
ActiveP-ChannelMOSFET (Metal Oxide)30 V11A (Ta)4.5V, 10V13mOhm @ 11A, 10V-45 nC @ 10 V±20V1750 pF @ 10 V-2.5W (Ta)150°CSurface Mount8-SOP8-SOIC (0.154", 3.90mm Width)
TO-220AB Full Pack
R8011KNXC7G
HIGH-SPEED SWITCHING NCH 800V 11
Rohm Semiconductor
2,000
In Stock
1 : $5.03000
Cut Tape (CT)
1,000 : $2.65923
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ActiveN-ChannelMOSFET (Metal Oxide)800 V11A (Ta)10V450mOhm @ 5.5A, 10V4.5V @ 5.5mA37 nC @ 10 V±20V1200 pF @ 100 V-65W (Tc)150°C (TJ)Through HoleTO-220FMTO-220-3 Full Pack
TO-220AB Full Pack
R6511KNXC7G
650V 11A TO-220FM, HIGH-SPEED SW
Rohm Semiconductor
3,994
In Stock
1 : $3.29000
Tube
-
Tube
ActiveN-ChannelMOSFET (Metal Oxide)650 V11A (Ta)10V400mOhm @ 3.8A, 10V5V @ 320µA22 nC @ 10 V±20V760 pF @ 25 V-53W (Tc)150°C (TJ)Through HoleTO-220FMTO-220-3 Full Pack
U-DFN2020-6 Type F
DMP1009UFDFQ-7
MOSFET P-CH 12V 11A 6UDFN
Diodes Incorporated
5,932
In Stock
1 : $0.65000
Cut Tape (CT)
3,000 : $0.23176
Tape & Reel (TR)
Tape & Reel (TR)
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ActiveP-ChannelMOSFET (Metal Oxide)12 V11A (Ta)1.8V, 4.5V11mOhm @ 5A, 4.5V1V @ 250µA44 nC @ 8 V±8V1860 pF @ 10 V-2W (Ta)-55°C ~ 150°C (TJ)Surface MountU-DFN2020-6 (Type F)6-UDFN Exposed Pad
HUML2020L8
RF4E110BNTR
MOSFET N-CH 30V 11A HUML2020L8
Rohm Semiconductor
1,166
In Stock
1 : $0.75000
Cut Tape (CT)
3,000 : $0.29015
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-
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ActiveN-ChannelMOSFET (Metal Oxide)30 V11A (Ta)4.5V, 10V11.1mOhm @ 11A, 10V2V @ 250µA24 nC @ 10 V±20V1200 pF @ 15 V-2W (Ta)150°C (TJ)Surface MountHUML2020L88-PowerUDFN
8-SOIC
SI4386DY-T1-GE3
MOSFET N-CH 30V 11A 8SO
Vishay Siliconix
1,778
In Stock
1 : $1.34000
Cut Tape (CT)
2,500 : $0.64867
Tape & Reel (TR)
Tape & Reel (TR)
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ActiveN-ChannelMOSFET (Metal Oxide)30 V11A (Ta)4.5V, 10V7mOhm @ 16A, 10V2.5V @ 250µA18 nC @ 4.5 V±20V--1.47W (Ta)-55°C ~ 150°C (TJ)Surface Mount8-SOIC8-SOIC (0.154", 3.90mm Width)
1,663
In Stock
1 : $0.56000
Cut Tape (CT)
3,000 : $0.19805
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-
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ActiveN-ChannelMOSFET (Metal Oxide)20 V11A (Ta)1.8V, 4.5V11mOhm @ 9.5A, 4.5V1V @ 250µA16 nC @ 4.5 V±10V1177 pF @ 10 V-2W (Ta)-55°C ~ 150°C (TJ)Surface MountDFN2020B-66-WDFN Exposed Pad
2,232
In Stock
1 : $0.69000
Cut Tape (CT)
Tape & Reel (TR)
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ObsoleteN-ChannelMOSFET (Metal Oxide)30 V11A (Ta)4.5V, 10V8.3mOhm @ 14A, 10V2V @ 250µA27 nC @ 10 V±20V2100 pF @ 15 V-1.56W (Ta)-55°C ~ 150°C (TJ)Surface MountPG-DSO-88-SOIC (0.154", 3.90mm Width)
TO-220AB Full Pack
R6011ENXC7G
600V 11A TO-220FM, LOW-NOISE POW
Rohm Semiconductor
1,000
In Stock
1 : $3.28000
Tube
-
Tube
ActiveN-ChannelMOSFET (Metal Oxide)600 V11A (Ta)10V390mOhm @ 3.8A, 10V4V @ 1mA32 nC @ 10 V±20V670 pF @ 25 V-53W (Tc)150°C (TJ)Through HoleTO-220FMTO-220-3 Full Pack
TO-220AB Full Pack
R6011KNXC7G
600V 11A TO-220FM, HIGH-SPEED SW
Rohm Semiconductor
1,000
In Stock
1 : $3.29000
Tube
-
Tube
ActiveN-ChannelMOSFET (Metal Oxide)600 V11A (Ta)10V390mOhm @ 3.8A, 10V5V @ 1mA22 nC @ 10 V±20V740 pF @ 25 V-53W (Tc)150°C (TJ)Through HoleTO-220FMTO-220-3 Full Pack
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11A (Ta) Transistors - FETs, MOSFETs - Single


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.