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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF3610STRLPBF
MOSFET N-CH 100V 103A D2PAK
Infineon Technologies
430
In Stock
1 : $3.39000
Cut Tape (CT)
800 : $2.12109
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)100 V103A (Tc)-11.6mOhm @ 62A, 10V4V @ 250µA150 nC @ 10 V-5380 pF @ 25 V---Surface MountPG-TO263-3TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
MSC025SMA120B
MSC025SMA120B
SICFET N-CH 1.2KV 103A TO247-3
Microchip Technology
54
In Stock
1 : $40.13000
Tube
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Tube
ActiveN-ChannelSiCFET (Silicon Carbide)1200 V103A (Tc)20V31mOhm @ 40A, 20V2.8V @ 1mA232 nC @ 20 V+25V, -10V3020 pF @ 1000 V-500W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
TO-247-4
MSC025SMA120B4
TRANS SJT N-CH 1200V 103A TO247
Microchip Technology
81
In Stock
1 : $41.33000
Tube
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Tube
ActiveN-ChannelSiCFET (Silicon Carbide)1200 V103A (Tc)20V31mOhm @ 40A, 20V2.8V @ 3mA232 nC @ 20 V+23V, -10V3020 pF @ 1000 V-500W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-4TO-247-4
742
In Stock
1 : $2.17000
Cut Tape (CT)
800 : $1.28956
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)100 V103A (Tc)6V, 10V5.05mOhm @ 60A, 10V3.8V @ 85µA76 nC @ 10 V±20V3600 pF @ 50 V-150W (Tc)-55°C ~ 175°C (TJ)Surface MountPG-TO263-3TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-247-3
NTHL020N120SC1
SICFET N-CH 1200V 103A TO247-3
onsemi
0
In Stock
Check Lead Time
1 : $53.04000
Tube
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Tube
ActiveN-ChannelSiCFET (Silicon Carbide)1200 V103A (Tc)20V28mOhm @ 60A, 20V4.3V @ 20mA203 nC @ 20 V+25V, -15V2890 pF @ 800 V-535W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
TO-247-3
NVHL020N120SC1
SICFET N-CH 1200V 103A TO247-3
onsemi
0
In Stock
Check Lead Time
1 : $61.85000
Tube
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)1200 V103A (Tc)20V28mOhm @ 60A, 20V4.3V @ 20mA203 nC @ 20 V+25V, -15V2890 pF @ 800 V-535W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
SOT-227-4, miniBLOC
APT100M50J
MOSFET N-CH 500V 103A SOT227
Microchip Technology
0
In Stock
Check Lead Time
20 : $54.27250
Tube
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Tube
ActiveN-ChannelMOSFET (Metal Oxide)500 V103A (Tc)10V38mOhm @ 75A, 10V5V @ 5mA620 nC @ 10 V±30V24600 pF @ 25 V-960W (Tc)-55°C ~ 150°C (TJ)Chassis MountSOT-227SOT-227-4, miniBLOC
SOT-227-4, miniBLOC
APT100F50J
MOSFET N-CH 500V 103A ISOTOP
Microchip Technology
0
In Stock
Check Lead Time
10 : $64.31000
Tube
Tube
ActiveN-ChannelMOSFET (Metal Oxide)500 V103A (Tc)10V36mOhm @ 75A, 10V5V @ 5mA620 nC @ 10 V±30V24600 pF @ 25 V-960W (Tc)-55°C ~ 150°C (TJ)Chassis MountISOTOP®SOT-227-4, miniBLOC
MOSFET N-CH 1200V 103A SP6
APTM120UM95FAG
MOSFET N-CH 1200V 103A SP6
Microsemi Corporation
0
In Stock
Obsolete
-
Bulk
ObsoleteN-ChannelMOSFET (Metal Oxide)1200 V103A (Tc)10V114mOhm @ 51.5A, 10V5V @ 15mA1122 nC @ 10 V±30V30900 pF @ 25 V-2272W (Tc)-40°C ~ 150°C (TJ)Chassis MountSP6SP6
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF3610SPBF
MOSFET N-CH 100V 103A D2PAK
Infineon Technologies
0
In Stock
Discontinued at Digi-Key
Tube
Discontinued at Digi-KeyN-ChannelMOSFET (Metal Oxide)100 V103A (Tc)10V11.6mOhm @ 62A, 10V4V @ 250µA150 nC @ 10 V±20V5380 pF @ 25 V-333W (Tc)-55°C ~ 175°C (TJ)Surface MountPG-TO263-3TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SIC MOS WAFER SALES 20MOHM 1200V
NTC020N120SC1
SIC MOS WAFER SALES 20MOHM 1200V
onsemi
0
In Stock
Obsolete
-
Tray
ObsoleteN-ChannelSiCFET (Silicon Carbide)1200 V103A (Tc)20V28mOhm @ 60A, 20V4.3V @ 20mA203 nC @ 20 V+25V, -15V2890 pF @ 800 V-535W (Tc)-55°C ~ 175°C (TJ)Surface MountDieDie
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103A (Tc) Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.