Harris Corporation Single Diodes

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Package
Product Status
Technology
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
RENRNSHZS10NB1TD-E
DIODE STANDARD 400V 1A DO204
Harris Corporation
3,407
Marketplace
1,514 : $0.20000
Bulk
-
-
Bulk
Active
Standard
400 V
1A
1.2 V @ 1 A
Standard Recovery >500ns, > 200mA (Io)
2 µs
2 µA @ 400 V
15pF @ 4V, 1MHz
Through Hole
DO-204, Axial
DO-204
-65°C ~ 175°C
11,097
Marketplace
1,297 : $0.23000
Bulk
-
-
Bulk
Obsolete
-
300 V
1A
1.3 V @ 1 A
Standard Recovery >500ns, > 200mA (Io)
150 µs
2 µA @ 300 V
10pF @ 4V, 1MHz
Through Hole
-
-
-65°C ~ 175°C
3,500
Marketplace
1,297 : $0.23000
Bulk
-
*
Bulk
Active
-
-
-
-
-
-
-
-
-
-
-
-
ONSONSDLM10C
DIODE STANDARD 50V 1A DO204
Harris Corporation
3,034
Marketplace
1,136 : $0.26000
Bulk
-
-
Bulk
Active
Standard
50 V
1A
1.2 V @ 1 A
Standard Recovery >500ns, > 200mA (Io)
2 µs
200 µA @ 50 V
15pF @ 4V, 1MHz
Through Hole
DO-204, Axial
DO-204
-65°C ~ 175°C
1N4001
DIODE GEN PURP 400V 1A SOD57
Harris Corporation
12,363
Marketplace
1,069 : $0.28000
Bulk
-
-
Bulk
Active
Standard
400 V
1A
1.1 V @ 2 A
Standard Recovery >500ns, > 200mA (Io)
4 µs
5 µA @ 400 V
40pF @ 0V, 1MHz
Through Hole
SOD-57, Axial
SOD-57
-55°C ~ 175°C
DIODE STANDARD 200V 5A AXIAL
DIODE STANDARD 200V 5A AXIAL
Harris Corporation
2,616
Marketplace
1,069 : $0.28000
Bulk
-
-
Bulk
Active
Standard
200 V
5A
1.1 V @ 5 A
Standard Recovery >500ns, > 200mA (Io)
5 µs
5 µA @ 200 V
-
Through Hole
Axial
Axial
-65°C ~ 175°C
34,046
Marketplace
865 : $0.35000
Bulk
-
-
Bulk
Active
-
50 V
3A
1.3 V @ 3 A
Standard Recovery >500ns, > 200mA (Io)
150 µs
2 µA @ 50 V
40pF @ 4V, 1MHz
Through Hole
-
-
-65°C ~ 175°C
1N4001
DIODE STANDARD 800V 3A SOD57
Harris Corporation
5,060
Marketplace
865 : $0.35000
Bulk
-
-
Bulk
Active
Standard
800 V
1A
1.1 V @ 2 A
Standard Recovery >500ns, > 200mA (Io)
4 µs
5 µA @ 800 V
40pF @ 0V, 1MHz
Through Hole
SOD-57, Axial
SOD-57
-55°C ~ 175°C
DIODE STANDARD 600V 1A 8SOIC
DIODE STANDARD 600V 1A 8SOIC
Harris Corporation
3,746
Marketplace
790 : $0.38000
Bulk
-
-
Bulk
Active
Standard
600 V
1A
2.1 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
25 ns
100 µA @ 600 V
-
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
-55°C ~ 150°C
DIODE STANDARD 100V 3A AL4
DIODE STANDARD 100V 3A AL4
Harris Corporation
3,795
Marketplace
699 : $0.43000
Bulk
-
-
Bulk
Active
Standard
100 V
3A
950 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
3 µA @ 100 V
100pF @ 4V, 1MHz
Through Hole
DO-204, Axial
AL-4
-65°C ~ 175°C
31,107
Marketplace
673 : $0.45000
Bulk
-
-
Bulk
Obsolete
-
50 V
1A
1.3 V @ 1 A
Standard Recovery >500ns, > 200mA (Io)
150 µs
2 µA @ 50 V
10pF @ 4V, 1MHz
Through Hole
-
-
-65°C ~ 175°C
1N4001
DIODE STANDARD 200V 3A SOD64
Harris Corporation
15,138
Marketplace
568 : $0.53000
Bulk
-
-
Bulk
Active
Standard
200 V
3A
1 V @ 3 A
Standard Recovery >500ns, > 200mA (Io)
-
5 µA @ 200 V
40pF @ 4V, 1MHz
Through Hole
SOD-64, Axial
SOD-64
-65°C ~ 175°C
ONSONSDLM10C
DIODE STANDARD 150V 1A TO204AE
Harris Corporation
1,808
Marketplace
568 : $0.53000
Bulk
-
-
Bulk
Active
Standard
150 V
1A
950 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
2 µA @ 150 V
45pF @ 4V, 1MHz
Through Hole
TO-204AE
TO-204AE
-65°C ~ 175°C
DIODE AVALANCHE 100V 4A IPAK
DIODE AVALANCHE 100V 4A IPAK
Harris Corporation
10,780
Marketplace
519 : $0.58000
Bulk
-
-
Bulk
Active
Avalanche
100 V
4A
1 V @ 4 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
500 µA @ 100 V
-
Through Hole
TO-251-3 Short Leads, IPAK, TO-251AA
IPAK
-65°C ~ 175°C
MJD32CTF-ON
DIODE STANDARD 150V 4A TO252
Harris Corporation
4,500
Marketplace
519 : $0.58000
Bulk
-
-
Bulk
Active
Standard
150 V
4A
1 V @ 4 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
100 µA @ 150 V
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252 (DPAK)
-65°C ~ 175°C
76,293
Marketplace
478 : $0.63000
Bulk
-
-
Bulk
Active
-
600 V
3A
1.3 V @ 3 A
Standard Recovery >500ns, > 200mA (Io)
150 µs
2 µA @ 600 V
40pF @ 4V, 1MHz
Through Hole
-
-
-65°C ~ 175°C
2,000
Marketplace
478 : $0.63000
Bulk
-
*
Bulk
Active
-
-
-
-
-
-
-
-
-
-
-
-
DIODE STANDARD 150V 6A TO252
DIODE STANDARD 150V 6A TO252
Harris Corporation
4,500
Marketplace
466 : $0.64000
Bulk
-
-
Bulk
Active
Standard
150 V
6A
1 V @ 6 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
100 µA @ 150 V
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252 (DPAK)
-65°C ~ 175°C
IRG4RC10UTRPBF
DIODE STANDARD 100V 6A TO252
Harris Corporation
2,349
Marketplace
466 : $0.64000
Bulk
-
-
Bulk
Active
Standard
100 V
6A
1 V @ 6 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
100 µA @ 100 V
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252 (DPAK)
-65°C ~ 175°C
1,100
Marketplace
454 : $0.66000
Bulk
-
*
Bulk
Active
-
-
-
-
-
-
-
-
-
-
-
-
MJD32CTF-ON
DIODE AVALANCHE 400V 4A TO252
Harris Corporation
4,581
Marketplace
404 : $0.74000
Bulk
-
-
Bulk
Active
Avalanche
400 V
4A
2.1 V @ 4 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
100 µA @ 400 V
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252 (DPAK)
-65°C ~ 175°C
RECTIFIER, AVALANCHE, 1 PHASE, 4
RECTIFIER, AVALANCHE, 1 PHASE, 4
Harris Corporation
10,858
Marketplace
387 : $0.78000
Bulk
-
*
Bulk
Active
-
-
-
-
-
-
-
-
-
-
-
-
1,640
Marketplace
371 : $0.81000
Bulk
-
-
Bulk
Obsolete
-
100 V
3A
1.3 V @ 3 A
Standard Recovery >500ns, > 200mA (Io)
150 µs
2 µA @ 100 V
40pF @ 4V, 1MHz
Through Hole
-
-
-65°C ~ 175°C
DIODE AVALANCHE 400V 6A IPAK
DIODE AVALANCHE 400V 6A IPAK
Harris Corporation
4,950
Marketplace
363 : $0.83000
Bulk
-
-
Bulk
Active
Avalanche
400 V
6A
1.5 V @ 6 A
Fast Recovery =< 500ns, > 200mA (Io)
60 ns
100 µA @ 400 V
-
Through Hole
TO-251-3 Short Leads, IPAK, TO-251AA
IPAK
-65°C ~ 175°C
DIODE AVALANCHE 400V 6A IPAK
DIODE AVALANCHE 400V 6A IPAK
Harris Corporation
4,364
Marketplace
363 : $0.83000
Bulk
-
-
Bulk
Active
Avalanche
400 V
6A
2.1 V @ 6 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
100 µA @ 400 V
-
Through Hole
TO-251-3 Short Leads, IPAK, TO-251AA
IPAK
-65°C ~ 175°C
Showing
of 134

Types of Rectifier Diodes


Standard Rectifier Diodes
  • Standard Diodes (Silicon PN Junction)
    Standard diodes are the most basic type of rectifier diode, made from silicon with a PN junction. They’re commonly used in AC-to-DC converters, power rectification, and general circuit protection. These diodes typically have a forward voltage drop around 0.7V and are best suited for low-frequency switching. Their reverse recovery time (how quickly they stop conducting when switched off) is relatively slow, which limits their use in high-speed applications. They also have low reverse leakage current, which makes them reliable for steady-state operations.

  • Schottky Barrier Diodes (SBD)
    Schottky diodes (SBDs) use a metal-semiconductor junction instead of a traditional PN junction, resulting in faster switching speeds and lower forward voltage drops—often between 0.2V and 0.4V. This makes them ideal for DC-DC converters, high-efficiency power supplies, and circuits where minimizing power loss is critical. However, one drawback of SBDs is their higher reverse leakage current, especially at elevated temperatures, which can be a concern in precision or battery-operated devices.

  • Super Barrier Rectifiers (SBR)
    Super Barrier Rectifiers (SBRs) combine the best traits of standard diodes and Schottky diodes. They offer low forward voltage drop like SBDs, but with significantly lower reverse leakage current and improved reverse voltage handling. SBRs are well-suited for switching power converters, adapters, and automotive electronics, where energy efficiency and thermal stability are important. They’re often a better choice than Schottky diodes when the application involves higher ambient temperatures or larger voltage transients.

  • Avalanche Diodes
    Avalanche diodes are designed to operate reliably in reverse breakdown mode, where they safely conduct current once a specific reverse voltage threshold is exceeded. Unlike standard diodes that can be damaged by breakdown, avalanche diodes are built to handle this condition repeatedly and predictably.
  • In fast switching rectification, avalanche diodes are sometimes preferred over standard PN diodes because of their improved reverse recovery behavior, which reduces switching losses and improves overall converter efficiency. Their ability to withstand high reverse voltage transients without degradation makes them particularly suited for snubber circuits, flyback converters, and hard-switched topologies.

  • Silicon Carbide (SiC) Diodes
    SiC diodes are built from silicon carbide, a wide-bandgap material that allows them to handle very high voltages (600V and up) and extreme temperatures (>150°C). They are ideal for industrial converters, electric vehicle chargers, solar inverters, and motor drives, especially in circuits requiring fast switching and zero reverse recovery time. Although more expensive than silicon-based diodes, their durability and efficiency at high voltages and frequencies often make them the best long-term choice in demanding applications.