Single Diodes

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Product Status
Technology
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Grade
Qualification
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
D²PAK
STPS5045SG-TR
DIODE SCHOTTKY 45V 50A D2PAK
STMicroelectronics
869
In Stock
1 : $2.27000
Cut Tape (CT)
1,000 : $0.82249
Tape & Reel (TR)
Tariff may apply if shipping to the United States
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
Schottky
45 V
50A
610 mV @ 50 A
Fast Recovery =< 500ns, > 200mA (Io)
-
360 µA @ 45 V
-
-
-
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
D2PAK
200°C (Max)
PG-TO263-3-2
IDB30E120ATMA1
DIODE STD 1200V 50A PGTO26332
Infineon Technologies
1,989
In Stock
1 : $2.35000
Cut Tape (CT)
1,000 : $0.74812
Tape & Reel (TR)
-
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
Standard
1200 V
50A
2.15 V @ 30 A
Fast Recovery =< 500ns, > 200mA (Io)
243 ns
100 µA @ 1200 V
-
-
-
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PG-TO263-3-2
-55°C ~ 150°C
RURGxxxx_F085
RURG5060-F085
DIODE AVALANCHE 600V 50A TO2472
onsemi
2,182
In Stock
19,800
Factory
1 : $5.75000
Tube
Tariff may apply if shipping to the United States
-
Tube
Active
Avalanche
600 V
50A
1.6 V @ 50 A
Fast Recovery =< 500ns, > 200mA (Io)
90 ns
250 µA @ 600 V
-
Automotive
AEC-Q101
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
TO-247-2-Series
RHRG5060-F085
DIODE AVALANCHE 600V 50A TO2472
onsemi
1,103
In Stock
2,250
Factory
1 : $6.81000
Tube
Tariff may apply if shipping to the United States
-
Tube
Active
Avalanche
600 V
50A
2.1 V @ 50 A
Fast Recovery =< 500ns, > 200mA (Io)
60 ns
250 µA @ 600 V
-
Automotive
AEC-Q101
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
TO-247-2
FFSH5065B-F085
DIODE SIL CARB 650V 50A TO247-2
onsemi
661
In Stock
450
Factory
1 : $17.02000
Tube
Tariff may apply if shipping to the United States
-
Tube
Active
SiC (Silicon Carbide) Schottky
650 V
50A
1.7 V @ 50 A
Zero Recovery Time > 500mA (Io)
0 ns
40 µA @ 650 V
2030pF @ 1V, 100kHz
Automotive
AEC-Q101
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
ESW6004
UJ3D1250K2
DIODE SIL CARB 1200V 50A TO2472
onsemi
14,158
In Stock
This product has a maximum purchase limit
1 : $29.32000
Tube
-
-
Tube
Active
SiC (Silicon Carbide) Schottky
1200 V
50A
1.7 V @ 50 A
Zero Recovery Time > 500mA (Io)
0 ns
400 µA @ 1200 V
2340pF @ 1V, 1MHz
-
-
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
TO-220-2
IDP30E120XKSA1
DIODE STD 1200V 50A PGTO22022
Infineon Technologies
139
In Stock
1 : $2.93000
Tube
-
-
Tube
Active
Standard
1200 V
50A
2.15 V @ 30 A
Fast Recovery =< 500ns, > 200mA (Io)
243 ns
100 µA @ 1200 V
-
-
-
Through Hole
TO-220-2
PG-TO220-2-2
-55°C ~ 150°C
1N6098
1N6098
DIODE SCHOTTKY 40V 50A DO5
Navitas Semiconductor, Inc.
211
In Stock
1 : $24.39000
Bulk
-
-
Bulk
Active
Schottky
40 V
50A
700 mV @ 50 A
Fast Recovery =< 500ns, > 200mA (Io)
-
5 mA @ 30 V
-
-
-
Chassis, Stud Mount
DO-203AB, DO-5, Stud
DO-5
-65°C ~ 150°C
PG-TO247-2-2
IDWD30E65E7XKSA1
DIODE STD 650V 50A PGTO24722
Infineon Technologies
179
In Stock
1 : $3.06000
Tube
-
-
Tube
Active
Standard
650 V
50A
2.1 V @ 30 A
Fast Recovery =< 500ns, > 200mA (Io)
82 ns
20 µA @ 650 V
-
-
-
Through Hole
TO-247-2
PG-TO247-2-2
-
PG-TO247-2-2
IDWD40E65E7XKSA1
DIODE STD 650V 50A PGTO24722
Infineon Technologies
161
In Stock
1 : $3.24000
Tube
-
-
Tube
Active
Standard
650 V
50A
2.1 V @ 40 A
Fast Recovery =< 500ns, > 200mA (Io)
89 ns
20 µA @ 650 V
-
-
-
Through Hole
TO-247-2
PG-TO247-2-2
-40°C ~ 175°C
TO-247-3L
UJ3D1250K
DIODE SIL CARB 1200V 50A TO2473
onsemi
6,385
In Stock
3,000
Factory
1 : $29.32000
Tube
-
-
Tube
Active
SiC (Silicon Carbide) Schottky
1200 V
50A
1.7 V @ 50 A
Zero Recovery Time > 500mA (Io)
0 ns
400 µA @ 1200 V
2340pF @ 1V, 1MHz
-
-
Through Hole
TO-247-3
TO-247-3
-55°C ~ 175°C
TO-247-2 Top View
MURZ50120P-BP
ULTRAFAST RECOVERY RECTIFIER,TO-
MCC (Micro Commercial Components)
308
In Stock
1 : $6.19000
Tube
-
-
Tube
Active
Standard
1200 V
50A
1.85 V @ 50 A
Fast Recovery =< 500ns, > 200mA (Io)
200 ns
10 µA @ 1200 V
180pF @ 4V, 1MHz
-
-
Through Hole
TO-247-2
TO-247AD
-55°C ~ 150°C
UES806
UES806
DIODE STANDARD 400V 50A DO5
Microchip Technology
89
In Stock
1 : $71.18000
Bulk
-
-
Bulk
Active
Standard
400 V
50A
1.25 V @ 50 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
70 µA @ 400 V
-
-
-
Stud Mount
DO-203AB, DO-5, Stud
DO-5 (DO-203AB)
-55°C ~ 150°C
TO-247-2-Series
FFH50US60S
DIODE STANDARD 600V 50A TO2472
onsemi
0
In Stock
6,816
Marketplace
124 : $2.41000
Bulk
Tariff may apply if shipping to the United States
Bulk
Tube
Obsolete
Standard
600 V
50A
1.54 V @ 50 A
Fast Recovery =< 500ns, > 200mA (Io)
124 ns
100 µA @ 600 V
-
-
-
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
IFEINFAIGW50N65F5XKSA1
RHRG5060
DIODE AVALANCHE 600V 50A TO2472
NXP USA Inc.
317
Marketplace
124 : $2.42000
Bulk
-
-
Bulk
Active
Avalanche
600 V
50A
2.1 V @ 50 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
250 µA @ 600 V
-
-
-
Through Hole
TO-247-2
TO-247-2
-65°C ~ 175°C
IFEINFAIGW50N65F5XKSA1
RHRG5070
DIODE AVALANCHE 700V 50A TO247
Harris Corporation
4,274
Marketplace
108 : $2.79000
Bulk
-
-
Bulk
Active
Avalanche
700 V
50A
3 V @ 50 A
Fast Recovery =< 500ns, > 200mA (Io)
95 ns
500 µA @ 700 V
-
-
-
Through Hole
TO-247-3
TO-247
-65°C ~ 175°C
IFEINFAIGW50N65F5XKSA1
RHRG5090
DIODE AVALANCHE 900V 50A TO247
Harris Corporation
3,150
Marketplace
98 : $3.05000
Bulk
-
-
Bulk
Active
Avalanche
900 V
50A
3 V @ 50 A
Fast Recovery =< 500ns, > 200mA (Io)
95 ns
500 µA @ 900 V
-
-
-
Through Hole
TO-247-3
TO-247
-65°C ~ 175°C
IFEINFAIGW50N65F5XKSA1
RHRG5080
DIODE AVALANCHE 800V 50A TO247
Harris Corporation
552
Marketplace
98 : $3.05000
Bulk
-
-
Bulk
Active
Avalanche
800 V
50A
3 V @ 50 A
Fast Recovery =< 500ns, > 200mA (Io)
95 ns
500 µA @ 800 V
-
-
-
Through Hole
TO-247-3
TO-247
-65°C ~ 175°C
IFEINFAIGW50N65F5XKSA1
RHRG50100
DIODE AVALANCHE 1000V 50A TO247
Harris Corporation
274
Marketplace
98 : $3.05000
Bulk
-
-
Bulk
Active
Avalanche
1000 V
50A
3 V @ 50 A
Fast Recovery =< 500ns, > 200mA (Io)
95 ns
250 µA @ 1000 V
-
-
-
Through Hole
TO-247-3
TO-247
-65°C ~ 175°C
2SK4221
RHRU5060
DIODE AVALANCHE 600V 50A TO218
Harris Corporation
734
Marketplace
85 : $3.51000
Bulk
-
-
Bulk
Active
Avalanche
600 V
50A
2.1 V @ 50 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
500 µA @ 600 V
-
-
-
Chassis Mount
TO-218-1
TO-218
-65°C ~ 175°C
DIODE AVALANCHE 500V 50A TO218
RURU5050
DIODE AVALANCHE 500V 50A TO218
Harris Corporation
580
Marketplace
83 : $3.63000
Bulk
-
-
Bulk
Active
Avalanche
500 V
50A
1.6 V @ 50 A
Fast Recovery =< 500ns, > 200mA (Io)
75 ns
500 µA @ 500 V
-
-
-
Chassis Mount
TO-218-1
TO-218
-65°C ~ 175°C
2SK4221
RHRU50100
DIODE AVALANCHE 1000V 50A TO218
Harris Corporation
280
Marketplace
82 : $3.68000
Bulk
-
-
Bulk
Active
Avalanche
1000 V
50A
3 V @ 50 A
Fast Recovery =< 500ns, > 200mA (Io)
95 ns
500 µA @ 1000 V
-
-
-
Chassis Mount
TO-218-1
TO-218
-65°C ~ 175°C
2SK4221
RURU50120
DIODE AVALANCHE 1200V 50A TO218
Harris Corporation
4,510
Marketplace
76 : $3.94000
Bulk
-
-
Bulk
Active
Avalanche
1200 V
50A
2.1 V @ 50 A
Fast Recovery =< 500ns, > 200mA (Io)
200 ns
500 µA @ 1200 V
-
-
-
Chassis Mount
TO-218-1
TO-218
-65°C ~ 175°C
2SK4221
RHRU50120
DIODE AVALANCHE 1200V 50A TO218
Harris Corporation
333
Marketplace
76 : $3.94000
Bulk
-
-
Bulk
Active
Avalanche
1200 V
50A
3.2 V @ 50 A
Fast Recovery =< 500ns, > 200mA (Io)
100 ns
500 µA @ 1200 V
-
-
-
Chassis Mount
TO-218-1
TO-218
-65°C ~ 175°C
2SK4221
RURU5060
DIODE AVALANCHE 600V 50A TO218
Harris Corporation
3,504
Marketplace
70 : $4.29000
Bulk
-
-
Bulk
Active
Avalanche
600 V
50A
1.6 V @ 50 A
Fast Recovery =< 500ns, > 200mA (Io)
75 ns
500 µA @ 600 V
-
-
-
Chassis Mount
TO-218-1
TO-218
-65°C ~ 175°C
Showing
of 149

Types of Rectifier Diodes

Standard Rectifier Diodes
  • Standard Diodes (Silicon PN Junction)
    Standard diodes are the most basic type of rectifier diode, made from silicon with a PN junction. They’re commonly used in AC-to-DC converters, power rectification, and general circuit protection. These diodes typically have a forward voltage drop around 0.7V and are best suited for low-frequency switching. Their reverse recovery time (how quickly they stop conducting when switched off) is relatively slow, which limits their use in high-speed applications. They also have low reverse leakage current, which makes them reliable for steady-state operations.

  • Schottky Barrier Diodes (SBD)
    Schottky diodes (SBDs) use a metal-semiconductor junction instead of a traditional PN junction, resulting in faster switching speeds and lower forward voltage drops—often between 0.2V and 0.4V. This makes them ideal for DC-DC converters, high-efficiency power supplies, and circuits where minimizing power loss is critical. However, one drawback of SBDs is their higher reverse leakage current, especially at elevated temperatures, which can be a concern in precision or battery-operated devices.

  • Super Barrier Rectifiers (SBR)
    Super Barrier Rectifiers (SBRs) combine the best traits of standard diodes and Schottky diodes. They offer low forward voltage drop like SBDs, but with significantly lower reverse leakage current and improved reverse voltage handling. SBRs are well-suited for switching power converters, adapters, and automotive electronics, where energy efficiency and thermal stability are important. They’re often a better choice than Schottky diodes when the application involves higher ambient temperatures or larger voltage transients.

  • Avalanche Diodes
    Avalanche diodes are designed to operate reliably in reverse breakdown mode, where they safely conduct current once a specific reverse voltage threshold is exceeded. Unlike standard diodes that can be damaged by breakdown, avalanche diodes are built to handle this condition repeatedly and predictably.
    • In fast switching rectification, avalanche diodes are sometimes preferred over standard PN diodes because of their improved reverse recovery behavior, which reduces switching losses and improves overall converter efficiency. Their ability to withstand high reverse voltage transients without degradation makes them particularly suited for snubber circuits, flyback converters, and hard-switched topologies.

  • Silicon Carbide (SiC) Diodes
    SiC diodes are built from silicon carbide, a wide-bandgap material that allows them to handle very high voltages (600V and up) and extreme temperatures (>150°C). They are ideal for industrial converters, electric vehicle chargers, solar inverters, and motor drives, especially in circuits requiring fast switching and zero reverse recovery time. Although more expensive than silicon-based diodes, their durability and efficiency at high voltages and frequencies often make them the best long-term choice in demanding applications.