TO-247-2 Single Diodes

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Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Grade
Qualification
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
APT75DQ120BG
APT75DQ120BG
DIODE STD 1200V 75A TO247 [B]
Microchip Technology
2,789
In Stock
1 : $3.12000
Tube
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-
Tube
Active
Standard
1200 V
75A
3.1 V @ 75 A
Fast Recovery =< 500ns, > 200mA (Io)
325 ns
100 µA @ 1200 V
-
-
-
Through Hole
TO-247-2
TO-247 [B]
-55°C ~ 175°C
TO-247-2
APT60D60BG
DIODE STD 600V 60A TO247 [B]
Microchip Technology
1,374
In Stock
1 : $3.29000
Tube
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-
Tube
Active
Standard
600 V
60A
1.8 V @ 60 A
Fast Recovery =< 500ns, > 200mA (Io)
130 ns
250 µA @ 600 V
-
-
-
Through Hole
TO-247-2
TO-247 [B]
-55°C ~ 175°C
1,830
In Stock
1 : $3.63000
Bulk
Tariff may apply if shipping to the United States
Bulk
Active
Standard
600 V
60A
1.68 V @ 60 A
Fast Recovery =< 500ns, > 200mA (Io)
81 ns
50 µA @ 600 V
-
-
-
Through Hole
TO-247-2
TO-247AC-2L
-55°C ~ 175°C
APT60S20BG
APT60S20BG
DIODE SCHOTTKY 200V 75A TO247
Microchip Technology
1,335
In Stock
1 : $3.87000
Tube
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-
Tube
Active
Schottky
200 V
75A
900 mV @ 60 A
Fast Recovery =< 500ns, > 200mA (Io)
55 ns
1 mA @ 200 V
-
-
-
Through Hole
TO-247-2
TO-247 [B]
-55°C ~ 150°C
GP3D020A170B
GP3D005A170B
DIODE SIL CARB 1700V 21A TO2472
SemiQ
712
In Stock
1 : $5.23000
Tube
-
Tube
Active
SiC (Silicon Carbide) Schottky
1700 V
21A
1.65 V @ 5 A
No Recovery Time > 500mA (Io)
0 ns
20 µA @ 1700 V
347pF @ 1V, 1MHz
-
-
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
TO-247-2
GD05MPS17H
DIODE SIL CARB 1700V 15A TO2472
GeneSiC Semiconductor
640
In Stock
1 : $5.29000
Tube
-
Tube
Active
SiC (Silicon Carbide) Schottky
1700 V
15A
1.8 V @ 5 A
No Recovery Time > 500mA (Io)
0 ns
20 µA @ 1700 V
361pF @ 1V, 1MHz
-
-
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
1,128
In Stock
1 : $5.43000
Tube
Tariff may apply if shipping to the United States
-
Tube
Active
Standard
1200 V
90A
1.2 V @ 90 A
Standard Recovery >500ns, > 200mA (Io)
-
100 µA @ 1200 V
-
-
-
Through Hole
TO-247-2
TO-247AD
-40°C ~ 150°C
TO-247-2-Series
DSEP30-12A
DIODE STANDARD 1200V 30A TO247AD
IXYS
5,382
In Stock
1 : $5.79000
Tube
-
Tube
Active
Standard
1200 V
30A
2.74 V @ 30 A
Fast Recovery =< 500ns, > 200mA (Io)
40 ns
250 µA @ 1200 V
-
-
-
Through Hole
TO-247-2
TO-247AD
-55°C ~ 175°C
300
In Stock
1 : $6.04000
Tube
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Tube
Active
Standard
300 V
30A
1.25 V @ 30 A
Fast Recovery =< 500ns, > 200mA (Io)
38 ns
60 µA @ 300 V
-
-
-
Through Hole
TO-247-2
TO-247AC-2L
-65°C ~ 175°C
TO-247-2-Series
DH40-18A
DIODE STANDARD 1800V 40A TO247AD
IXYS
395
In Stock
1 : $6.74000
Tube
-
Tube
Active
Standard
1800 V
40A
2.7 V @ 40 A
Fast Recovery =< 500ns, > 200mA (Io)
300 ns
100 µA @ 1800 V
-
-
-
Through Hole
TO-247-2
TO-247AD
-40°C ~ 150°C
423
In Stock
1 : $6.87000
Tube
Tariff may apply if shipping to the United States
-
Tube
Active
Standard
1600 V
60A
1.15 V @ 60 A
Standard Recovery >500ns, > 200mA (Io)
-
100 µA @ 1600 V
-
-
-
Through Hole
TO-247-2
TO-247AC-2L
-40°C ~ 150°C
TO-247-2-Series
DSEI120-06A
DIODE STANDARD 600V 77A TO247AD
IXYS
1,178
In Stock
1 : $7.97000
Tube
-
Tube
Active
Standard
600 V
77A
1.3 V @ 70 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
3 mA @ 600 V
-
-
-
Through Hole
TO-247-2
TO-247AD
-40°C ~ 150°C
IDWD20G120C5XKSA1
IDWD20G120C5XKSA1
DIODE SIC 1.2KV 62A PGTO2472
Infineon Technologies
221
In Stock
1 : $8.04000
Tube
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Tube
Active
SiC (Silicon Carbide) Schottky
1200 V
62A
1.65 V @ 20 A
No Recovery Time > 500mA (Io)
0 ns
166 µA @ 1200 V
1368pF @ 1V, 1MHz
-
-
Through Hole
TO-247-2
PG-TO247-2
-55°C ~ 175°C
TO-247-2-Series
DSEI60-06A
DIODE STANDARD 600V 60A TO247AD
IXYS
1,183
In Stock
1 : $8.08000
Tube
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-
Tube
Active
Standard
600 V
60A
1.8 V @ 70 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
200 µA @ 600 V
-
-
-
Through Hole
TO-247-2
TO-247AD
-40°C ~ 150°C
TO-247-2
GD10MPS17H
DIODE SIL CARB 1700V 26A TO2472
GeneSiC Semiconductor
681
In Stock
1 : $8.17000
Tube
-
Tube
Active
SiC (Silicon Carbide) Schottky
1700 V
26A
1.8 V @ 10 A
No Recovery Time > 500mA (Io)
0 ns
20 µA @ 1700 V
721pF @ 1V, 1MHz
-
-
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
TO-247-2
GD30MPS12H
DIODE SIL CARB 1200V 55A TO2472
GeneSiC Semiconductor
125
In Stock
1 : $9.88000
Tube
-
Tube
Active
SiC (Silicon Carbide) Schottky
1200 V
55A
1.8 V @ 30 A
Fast Recovery =< 500ns, > 200mA (Io)
-
20 µA @ 1200 V
1101pF @ 1V, 1MHz
-
-
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
TO-247-2
GD60MPS06H
DIODE SIL CARB 650V 82A TO247-2
GeneSiC Semiconductor
637
In Stock
1 : $10.33000
Tube
-
Tube
Active
SiC (Silicon Carbide) Schottky
650 V
82A
1.8 V @ 60 A
No Recovery Time > 500mA (Io)
0 ns
10 µA @ 650 V
1463pF @ 1V, 1MHz
-
-
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
C6D25170H
C6D05170H
DIODE SIL CARB 1700V 21A TO2472
Wolfspeed, Inc.
331
In Stock
1 : $10.63000
Tube
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-
Tube
Active
SiC (Silicon Carbide) Schottky
1700 V
21A
1.7 V @ 5 A
No Recovery Time > 500mA (Io)
0 ns
9 µA @ 1700 V
638pF @ 0V, 1MHz
-
-
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
TO-247-2-Series
DH60-18A
DIODE STANDARD 1800V 60A TO247AD
IXYS
521
In Stock
1 : $11.69000
Tube
-
-
Tube
Active
Standard
1800 V
60A
2.04 V @ 60 A
Fast Recovery =< 500ns, > 200mA (Io)
230 ns
200 µA @ 1800 V
32pF @ 1200V, 1MHz
-
-
Through Hole
TO-247-2
TO-247AD
-55°C ~ 150°C
TO-247-2-Series
DSDI60-18A
DIODE STANDARD 1800V 63A TO247AD
IXYS
1,396
In Stock
1 : $12.81000
Tube
-
-
Tube
Active
Standard
1800 V
63A
4.1 V @ 70 A
Fast Recovery =< 500ns, > 200mA (Io)
300 ns
2 mA @ 1800 V
-
-
-
Through Hole
TO-247-2
TO-247AD
-40°C ~ 150°C
IDWD20G120C5XKSA1
IDWD30G120C5XKSA1
DIODE SIC 1.2KV 87A PGTO2472
Infineon Technologies
640
In Stock
1 : $13.76000
Tube
-
Tube
Active
SiC (Silicon Carbide) Schottky
1200 V
87A
1.65 V @ 30 A
No Recovery Time > 500mA (Io)
0 ns
248 µA @ 1200 V
1980pF @ 1V, 1MHz
-
-
Through Hole
TO-247-2
PG-TO247-2
-55°C ~ 175°C
IDWD20G120C5XKSA1
IDWD40G120C5XKSA1
DIODE SIC 1.2KV 110A PGTO2472
Infineon Technologies
210
In Stock
1 : $15.16000
Tube
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Tube
Active
SiC (Silicon Carbide) Schottky
1200 V
110A
1.65 V @ 40 A
No Recovery Time > 500mA (Io)
0 ns
332 µA @ 1200 V
2592pF @ 1V, 1MHz
-
-
Through Hole
TO-247-2
PG-TO247-2
-55°C ~ 175°C
UJ3D1725K2
UJ3D1725K2
DIODE SIL CARB 1700V 25A TO2472
onsemi
2,064
In Stock
1 : $17.71000
Tube
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-
Tube
Active
SiC (Silicon Carbide) Schottky
1700 V
25A
1.7 V @ 25 A
No Recovery Time > 500mA (Io)
0 ns
360 µA @ 1700 V
1500pF @ 1V, 1MHz
Automotive
AEC-Q101
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
C6D25170H
C6D10170H
DIODE SIL CARB 1700V 40A TO2472
Wolfspeed, Inc.
810
In Stock
1 : $18.55000
Tube
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-
Tube
Active
SiC (Silicon Carbide) Schottky
1700 V
40A
1.7 V @ 10 A
No Recovery Time > 500mA (Io)
0 ns
18 µA @ 1700 V
1227pF @ 0V, 1MHz
-
-
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
UJ3D1725K2
UJ3D1250K2
DIODE SIL CARB 1200V 50A TO2472
onsemi
14,535
In Stock
1 : $22.90000
Tube
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-
Tube
Active
SiC (Silicon Carbide) Schottky
1200 V
50A
1.7 V @ 50 A
No Recovery Time > 500mA (Io)
0 ns
400 µA @ 1200 V
2340pF @ 1V, 1MHz
-
-
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
Showing
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TO-247-2 Single Diodes

Products within the single rectifier diode family are used to allow current flow in one direction only, and implement exactly one instance of this function per device package. Diodes used for other purposes (including zener and variable capacitance diodes) are listed separately in product families of their own, as are products incorporating multiple diodes per device package.