TO-220-2 Single Diodes

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Technology
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Grade
Qualification
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
MUR880EG
MBR10100G
DIODE SCHOTTKY 100V 10A TO2202
onsemi
12,460
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1 : $0.71000
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Schottky
100 V
10A
800 mV @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 100 V
-
-
-
Through Hole
TO-220-2
TO-220-2
-65°C ~ 175°C
9,899
In Stock
1 : $1.15000
Tube
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Active
Standard
1200 V
6A
3.9 V @ 12 A
Fast Recovery =< 500ns, > 200mA (Io)
80 ns
5 µA @ 1200 V
-
-
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
MUR880EG
MUR860G
DIODE STANDARD 600V 8A TO2202
onsemi
24,190
In Stock
1 : $1.19000
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Standard
600 V
8A
1.5 V @ 8 A
Fast Recovery =< 500ns, > 200mA (Io)
60 ns
10 µA @ 600 V
-
-
-
Through Hole
TO-220-2
TO-220-2
-65°C ~ 175°C
15,748
In Stock
1 : $1.34000
Tube
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-
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Active
Schottky
80 V
8A
880 mV @ 16 A
Fast Recovery =< 500ns, > 200mA (Io)
-
550 µA @ 80 V
500pF @ 5V, 1MHz
-
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 175°C
8,093
In Stock
1 : $1.67000
Tube
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-
Tube
Active
Standard
800 V
20A
1.1 V @ 20 A
Standard Recovery >500ns, > 200mA (Io)
-
100 µA @ 800 V
-
-
-
Through Hole
TO-220-2
TO-220AC
-40°C ~ 150°C
5,980
In Stock
1 : $1.86000
Tube
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Schottky
45 V
20A
660 mV @ 20 A
Fast Recovery =< 500ns, > 200mA (Io)
-
2 mA @ 45 V
-
-
-
Through Hole
TO-220-2
TO-220AC
200°C (Max)
DSEI25-06A
DSEI8-06A
DIODE STANDARD 600V 8A TO220AC
IXYS
5,421
In Stock
1 : $2.44000
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-
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Standard
600 V
8A
1.5 V @ 8 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
20 µA @ 600 V
-
-
-
Through Hole
TO-220-2
TO-220AC
-40°C ~ 150°C
MUR880EG
MUR8100EG
DIODE STANDARD 1000V 8A TO2202
onsemi
5,010
In Stock
1 : $2.54000
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Standard
1000 V
8A
1.8 V @ 8 A
Fast Recovery =< 500ns, > 200mA (Io)
100 ns
25 µA @ 1000 V
-
-
-
Through Hole
TO-220-2
TO-220-2
-65°C ~ 175°C
5,456
In Stock
1 : $2.61000
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Standard
1200 V
16A
3.93 V @ 32 A
Fast Recovery =< 500ns, > 200mA (Io)
135 ns
20 µA @ 1200 V
-
-
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
TO-220-2
ISL9R1560P2-F085
DIODE AVALANCHE 600V 15A TO2202
onsemi
2,479
In Stock
1 : $2.74000
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Avalanche
600 V
15A
2.2 V @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
30 ns
100 µA @ 600 V
-
Automotive
AEC-Q101
Through Hole
TO-220-2
TO-220-2
-55°C ~ 175°C
DSEI25-06A
DSEI12-12A
DIODE STANDARD 1200V 11A TO220AC
IXYS
2,564
In Stock
1 : $3.16000
Tube
-
-
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Standard
1200 V
11A
2.6 V @ 12 A
Fast Recovery =< 500ns, > 200mA (Io)
70 ns
250 µA @ 1200 V
-
-
-
Through Hole
TO-220-2
TO-220AC
-40°C ~ 150°C
7,894
In Stock
1 : $3.23000
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Standard
1200 V
30A
2.5 V @ 30 A
Fast Recovery =< 500ns, > 200mA (Io)
58 ns
50 µA @ 1200 V
-
-
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 175°C
UJ3D06508TS
UJ3D1202TS
DIODE SIL CARBIDE 1200V 2A TO220
onsemi
6,512
In Stock
1 : $3.96000
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-
-
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SiC (Silicon Carbide) Schottky
1200 V
2A
1.6 V @ 5 A
No Recovery Time > 500mA (Io)
0 ns
22 µA @ 1200 V
109pF @ 1V, 1MHz
-
-
Through Hole
TO-220-2
TO-220-2
-55°C ~ 175°C
DSEI25-06A
DSEI20-12A
DIODE STANDARD 1200V 17A TO220AC
IXYS
7,428
In Stock
1 : $4.79000
Tube
-
-
Tube
Active
Standard
1200 V
17A
2.15 V @ 12 A
Fast Recovery =< 500ns, > 200mA (Io)
60 ns
750 µA @ 1200 V
-
-
-
Through Hole
TO-220-2
TO-220AC
-40°C ~ 150°C
TO-220-2
IDH12SG60CXKSA2
DIODE SIL CARB 600V 12A PGTO2201
Infineon Technologies
475
In Stock
1 : $6.42000
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-
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SiC (Silicon Carbide) Schottky
600 V
12A
2.1 V @ 12 A
No Recovery Time > 500mA (Io)
0 ns
100 µA @ 600 V
310pF @ 1V, 1MHz
-
-
Through Hole
TO-220-2
PG-TO220-2-1
-55°C ~ 175°C
IDH20G65C6XKSA1
IDH20G65C6XKSA1
DIODE SIL CARB 650V 41A PGTO220
Infineon Technologies
1,058
In Stock
1 : $6.97000
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-
-
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SiC (Silicon Carbide) Schottky
650 V
41A
1.35 V @ 20 A
No Recovery Time > 500mA (Io)
0 ns
67 µA @ 420 V
970pF @ 1V, 1MHz
-
-
Through Hole
TO-220-2
PG-TO220-2
-55°C ~ 175°C
TO-220AC
STPSC15H12D
DIODE SIL CARB 1200V 15A TO220AC
STMicroelectronics
1,099
In Stock
1 : $7.83000
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SiC (Silicon Carbide) Schottky
1200 V
15A
1.5 V @ 15 A
No Recovery Time > 500mA (Io)
0 ns
90 µA @ 1200 V
1200pF @ 0V, 1MHz
-
-
Through Hole
TO-220-2
TO-220AC
-40°C ~ 175°C
TO-220AC
STTH512D
DIODE STANDARD 1200V 5A TO220AC
STMicroelectronics
1,482
In Stock
1 : $0.37000
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Standard
1200 V
5A
2.2 V @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
95 ns
5 µA @ 1200 V
-
-
-
Through Hole
TO-220-2
TO-220AC
175°C (Max)
TO-220AC
STPS1045D
DIODE SCHOTTKY 45V 10A TO220AC
STMicroelectronics
3,516
In Stock
1 : $0.56000
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Schottky
45 V
10A
600 mV @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 45 V
-
-
-
Through Hole
TO-220-2
TO-220AC
175°C (Max)
15,202
In Stock
1 : $0.59000
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-
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Schottky
45 V
10A
570 mV @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 45 V
-
-
-
Through Hole
TO-220-2
TO-220AC
-65°C ~ 150°C
4,399
In Stock
1 : $0.61000
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Schottky
45 V
30A
700 mV @ 30 A
Fast Recovery =< 500ns, > 200mA (Io)
-
2 mA @ 45 V
-
-
-
Through Hole
TO-220-2
TO-220AC
200°C (Max)
4,964
In Stock
1 : $0.66000
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Standard
600 V
8A
2.1 V @ 16 A
Fast Recovery =< 500ns, > 200mA (Io)
55 ns
5 µA @ 600 V
-
-
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
TO-220AC
STTH1502D
DIODE STANDARD 200V 15A TO220AC
STMicroelectronics
1,860
In Stock
1 : $0.75000
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Standard
200 V
15A
1.1 V @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
36 ns
10 µA @ 200 V
-
-
-
Through Hole
TO-220-2
TO-220AC
175°C (Max)
TO-220AC
STPS10L60D
DIODE SCHOTTKY 60V 10A TO220AC
STMicroelectronics
2,119
In Stock
1 : $0.76000
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Schottky
60 V
10A
600 mV @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
-
350 µA @ 60 V
-
-
-
Through Hole
TO-220-2
TO-220AC
150°C (Max)
TO-220AC
STPS8H100D
DIODE SCHOTTKY 100V 8A TO220AC
STMicroelectronics
1,817
In Stock
1 : $0.76000
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-
-
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Schottky
100 V
8A
710 mV @ 8 A
Fast Recovery =< 500ns, > 200mA (Io)
-
4.5 µA @ 100 V
-
-
-
Through Hole
TO-220-2
TO-220AC
175°C (Max)
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Types of Rectifier Diodes

Standard Rectifier Diodes
  • Standard Diodes (Silicon PN Junction)
    Standard diodes are the most basic type of rectifier diode, made from silicon with a PN junction. They’re commonly used in AC-to-DC converters, power rectification, and general circuit protection. These diodes typically have a forward voltage drop around 0.7V and are best suited for low-frequency switching. Their reverse recovery time (how quickly they stop conducting when switched off) is relatively slow, which limits their use in high-speed applications. They also have low reverse leakage current, which makes them reliable for steady-state operations.

  • Schottky Barrier Diodes (SBD)
    Schottky diodes (SBDs) use a metal-semiconductor junction instead of a traditional PN junction, resulting in faster switching speeds and lower forward voltage drops—often between 0.2V and 0.4V. This makes them ideal for DC-DC converters, high-efficiency power supplies, and circuits where minimizing power loss is critical. However, one drawback of SBDs is their higher reverse leakage current, especially at elevated temperatures, which can be a concern in precision or battery-operated devices.

  • Super Barrier Rectifiers (SBR)
    Super Barrier Rectifiers (SBRs) combine the best traits of standard diodes and Schottky diodes. They offer low forward voltage drop like SBDs, but with significantly lower reverse leakage current and improved reverse voltage handling. SBRs are well-suited for switching power converters, adapters, and automotive electronics, where energy efficiency and thermal stability are important. They’re often a better choice than Schottky diodes when the application involves higher ambient temperatures or larger voltage transients.

  • Avalanche Diodes
    Avalanche diodes are designed to operate reliably in reverse breakdown mode, where they safely conduct current once a specific reverse voltage threshold is exceeded. Unlike standard diodes that can be damaged by breakdown, avalanche diodes are built to handle this condition repeatedly and predictably.
    • In fast switching rectification, avalanche diodes are sometimes preferred over standard PN diodes because of their improved reverse recovery behavior, which reduces switching losses and improves overall converter efficiency. Their ability to withstand high reverse voltage transients without degradation makes them particularly suited for snubber circuits, flyback converters, and hard-switched topologies.

  • Silicon Carbide (SiC) Diodes
    SiC diodes are built from silicon carbide, a wide-bandgap material that allows them to handle very high voltages (600V and up) and extreme temperatures (>150°C). They are ideal for industrial converters, electric vehicle chargers, solar inverters, and motor drives, especially in circuits requiring fast switching and zero reverse recovery time. Although more expensive than silicon-based diodes, their durability and efficiency at high voltages and frequencies often make them the best long-term choice in demanding applications.