Single Diodes

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Mfr Part #	Quantity Available	Price	Tariff Status	Series	Package	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
1N5819 DIODE SCHOTTKY 40V 1A DO41 STMicroelectronics	33,084 In Stock	2,000 : $0.05050 Tape & Box (TB) 1 : $0.13000 Cut Tape (CT)	Tariff may apply if shipping to the United States	-	Cut Tape (CT) Tape & Box (TB)	Last Time Buy	Schottky	40 V	1A	550 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	500 µA @ 40 V	-	-	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	150°C (Max)
1N5822 DIODE SCHOTTKY 40V 3A DO201AD STMicroelectronics	16,874 In Stock	600 : $0.13232 Tape & Box (TB) 1 : $0.28000 Cut Tape (CT)	-	-	Cut Tape (CT) Tape & Box (TB)	Last Time Buy	Schottky	40 V	3A	525 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	2 mA @ 40 V	-	-	-	Through Hole	DO-201AD, Axial	DO-201AD	150°C (Max)
1N5822 DIODE SCHOTTKY 40V 3A DO201AD Taiwan Semiconductor Corporation	2,391 In Stock	1 : $0.61000 Cut Tape (CT) 1,250 : $0.16968 Tape & Reel (TR)	Tariff may apply if shipping to the United States	-	Tape & Reel (TR) Cut Tape (CT)	Active	Schottky	40 V	3A	525 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	500 µA @ 40 V	200pF @ 4V, 1MHz	-	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 125°C
1N5822 DIODE SCHOTTKY 40V 3A AXIAL Fairchild Semiconductor	3,469 Marketplace	788 : $0.38000 Bulk	-	-	Bulk	Active	Schottky	40 V	3A	525 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	2 mA @ 40 V	-	-	-	Through Hole	DO-201AA, DO-27, Axial	Axial	-65°C ~ 125°C
1N5822 DIODE SCHOTTKY 40V 3A DO201 Diotec Semiconductor	624 In Stock	1,700 : $0.17325 Bulk 1 : $0.44000 Cut Tape (CT)	Tariff may apply if shipping to the United States	-	Cut Tape (CT) Bulk	Active	Schottky	40 V	3A	950 mV @ 9.4 A	Fast Recovery =< 500ns, > 200mA (Io)	2 mA @ 40 V	-	-	-	Through Hole	DO-201AA, DO-27, Axial	DO-201	-50°C ~ 150°C
1N5822 DIODE SCHOTTKY 40V 3A B AXIAL Microchip Technology	92 In Stock	1 : $14.04000 Bulk	-	-	Bulk	Active	Schottky	40 V	3A	500 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	100 µA @ 40 V	-	-	-	Through Hole	B, Axial	B, Axial	-65°C ~ 125°C

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Types of Rectifier Diodes

Standard Rectifier Diodes

Standard Diodes (Silicon PN Junction)
Standard diodes are the most basic type of rectifier diode, made from silicon with a PN junction. They’re commonly used in AC-to-DC converters, power rectification, and general circuit protection. These diodes typically have a forward voltage drop around 0.7V and are best suited for low-frequency switching. Their reverse recovery time (how quickly they stop conducting when switched off) is relatively slow, which limits their use in high-speed applications. They also have low reverse leakage current, which makes them reliable for steady-state operations.

Schottky Barrier Diodes (SBD)
Schottky diodes (SBDs) use a metal-semiconductor junction instead of a traditional PN junction, resulting in faster switching speeds and lower forward voltage drops—often between 0.2V and 0.4V. This makes them ideal for DC-DC converters, high-efficiency power supplies, and circuits where minimizing power loss is critical. However, one drawback of SBDs is their higher reverse leakage current, especially at elevated temperatures, which can be a concern in precision or battery-operated devices.

Super Barrier Rectifiers (SBR)
Super Barrier Rectifiers (SBRs) combine the best traits of standard diodes and Schottky diodes. They offer low forward voltage drop like SBDs, but with significantly lower reverse leakage current and improved reverse voltage handling. SBRs are well-suited for switching power converters, adapters, and automotive electronics, where energy efficiency and thermal stability are important. They’re often a better choice than Schottky diodes when the application involves higher ambient temperatures or larger voltage transients.

Avalanche Diodes
Avalanche diodes are designed to operate reliably in reverse breakdown mode, where they safely conduct current once a specific reverse voltage threshold is exceeded. Unlike standard diodes that can be damaged by breakdown, avalanche diodes are built to handle this condition repeatedly and predictably.

Silicon Carbide (SiC) Diodes
SiC diodes are built from silicon carbide, a wide-bandgap material that allows them to handle very high voltages (600V and up) and extreme temperatures (>150°C). They are ideal for industrial converters, electric vehicle chargers, solar inverters, and motor drives, especially in circuits requiring fast switching and zero reverse recovery time. Although more expensive than silicon-based diodes, their durability and efficiency at high voltages and frequencies often make them the best long-term choice in demanding applications.