Single Diodes

Results: 5
Stocking Options
Environmental Options
Media
Exclude
5Results

Showing
of 5
Mfr Part #
Quantity Available
Price
Tariff Status
Series
Package
Product Status
Technology
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
PMEG40T10ERX
PMEG10010ELRX
DIODE SCHOTTKY 100V 1A SOD123W
Nexperia USA Inc.
221,504
In Stock
1 : $0.27000
Cut Tape (CT)
3,000 : $0.07070
Tape & Reel (TR)
-
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
Schottky
100 V
1A
770 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
3.7 ns
150 nA @ 100 V
70pF @ 1V, 1MHz
Surface Mount
SOD-123W
SOD-123W
175°C (Max)
1N4148WTQ-7
BAT54WT-7
DIODE SCHOTTKY 30V 100MA SOD523
Diodes Incorporated
22,774
In Stock
1 : $0.20000
Cut Tape (CT)
3,000 : $0.03923
Tape & Reel (TR)
Tariff may apply if shipping to the United States
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
Schottky
30 V
100mA
1 V @ 100 mA
Small Signal =< 200mA (Io), Any Speed
5 ns
2 µA @ 25 V
-
Surface Mount
SC-79, SOD-523
SOD-523
-65°C ~ 150°C
PMEG40T10ERX
PMEG6020AELRX
DIODE SCHOTTKY 60V 2A SOD123W
Nexperia USA Inc.
94,682
In Stock
1 : $0.31000
Cut Tape (CT)
3,000 : $0.08487
Tape & Reel (TR)
-
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
Schottky
60 V
2A
670 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
9 ns
700 nA @ 60 V
220pF @ 1V, 1MHz
Surface Mount
SOD-123W
SOD-123W
175°C (Max)
GV806B_R2_00001
SVT15100UB_R2_00001
DIODE SCHOTTKY 100V 15A TO277B
Panjit International Inc.
0
In Stock
Check Lead Time
1 : $0.78000
Cut Tape (CT)
5,000 : $0.17363
Tape & Reel (TR)
-
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
Schottky
100 V
15A
660 mV @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
-
80 µA @ 100 V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277B
-55°C ~ 150°C
0
In Stock
1,500 : $0.22147
Tape & Reel (TR)
-
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Discontinued at Digi-Key
Schottky
100 V
10A
770 mV @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
-
50 µA @ 100 V
490pF @ 4V, 1MHz
Surface Mount
DO-221AA, SMB Flat Leads
SMBF
-55°C ~ 150°C
Showing
of 5

Types of Rectifier Diodes


Standard Rectifier Diodes
  • Standard Diodes (Silicon PN Junction)
    Standard diodes are the most basic type of rectifier diode, made from silicon with a PN junction. They’re commonly used in AC-to-DC converters, power rectification, and general circuit protection. These diodes typically have a forward voltage drop around 0.7V and are best suited for low-frequency switching. Their reverse recovery time (how quickly they stop conducting when switched off) is relatively slow, which limits their use in high-speed applications. They also have low reverse leakage current, which makes them reliable for steady-state operations.

  • Schottky Barrier Diodes (SBD)
    Schottky diodes (SBDs) use a metal-semiconductor junction instead of a traditional PN junction, resulting in faster switching speeds and lower forward voltage drops—often between 0.2V and 0.4V. This makes them ideal for DC-DC converters, high-efficiency power supplies, and circuits where minimizing power loss is critical. However, one drawback of SBDs is their higher reverse leakage current, especially at elevated temperatures, which can be a concern in precision or battery-operated devices.

  • Super Barrier Rectifiers (SBR)
    Super Barrier Rectifiers (SBRs) combine the best traits of standard diodes and Schottky diodes. They offer low forward voltage drop like SBDs, but with significantly lower reverse leakage current and improved reverse voltage handling. SBRs are well-suited for switching power converters, adapters, and automotive electronics, where energy efficiency and thermal stability are important. They’re often a better choice than Schottky diodes when the application involves higher ambient temperatures or larger voltage transients.

  • Avalanche Diodes
    Avalanche diodes are designed to operate reliably in reverse breakdown mode, where they safely conduct current once a specific reverse voltage threshold is exceeded. Unlike standard diodes that can be damaged by breakdown, avalanche diodes are built to handle this condition repeatedly and predictably.
  • In fast switching rectification, avalanche diodes are sometimes preferred over standard PN diodes because of their improved reverse recovery behavior, which reduces switching losses and improves overall converter efficiency. Their ability to withstand high reverse voltage transients without degradation makes them particularly suited for snubber circuits, flyback converters, and hard-switched topologies.

  • Silicon Carbide (SiC) Diodes
    SiC diodes are built from silicon carbide, a wide-bandgap material that allows them to handle very high voltages (600V and up) and extreme temperatures (>150°C). They are ideal for industrial converters, electric vehicle chargers, solar inverters, and motor drives, especially in circuits requiring fast switching and zero reverse recovery time. Although more expensive than silicon-based diodes, their durability and efficiency at high voltages and frequencies often make them the best long-term choice in demanding applications.