Single Diodes

Showing

of 5

Mfr Part #	Quantity Available	Price	Tariff Status	Series	Package	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
PMEG10010ELRX DIODE SCHOTTKY 100V 1A SOD123W Nexperia USA Inc.	221,504 In Stock	1 : $0.27000 Cut Tape (CT) 3,000 : $0.07070 Tape & Reel (TR)	-	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	Schottky	100 V	1A	770 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	3.7 ns	150 nA @ 100 V	70pF @ 1V, 1MHz	Surface Mount	SOD-123W	SOD-123W	175°C (Max)
BAT54WT-7 DIODE SCHOTTKY 30V 100MA SOD523 Diodes Incorporated	22,774 In Stock	1 : $0.20000 Cut Tape (CT) 3,000 : $0.03923 Tape & Reel (TR)	Tariff may apply if shipping to the United States	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	Schottky	30 V	100mA	1 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	5 ns	2 µA @ 25 V	-	Surface Mount	SC-79, SOD-523	SOD-523	-65°C ~ 150°C
PMEG6020AELRX DIODE SCHOTTKY 60V 2A SOD123W Nexperia USA Inc.	94,682 In Stock	1 : $0.31000 Cut Tape (CT) 3,000 : $0.08487 Tape & Reel (TR)	-	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	Schottky	60 V	2A	670 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	9 ns	700 nA @ 60 V	220pF @ 1V, 1MHz	Surface Mount	SOD-123W	SOD-123W	175°C (Max)
SVT15100UB_R2_00001 DIODE SCHOTTKY 100V 15A TO277B Panjit International Inc.	0 In Stock Check Lead Time	1 : $0.78000 Cut Tape (CT) 5,000 : $0.17363 Tape & Reel (TR)	-	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	Schottky	100 V	15A	660 mV @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	-	80 µA @ 100 V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277B	-55°C ~ 150°C
STR10100BF_R1_00701 DIODE SCHOTTKY 100V 10A SMBF Panjit International Inc.	0 In Stock	1,500 : $0.22147 Tape & Reel (TR)	-	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Discontinued at Digi-Key	Schottky	100 V	10A	770 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 100 V	490pF @ 4V, 1MHz	Surface Mount	DO-221AA, SMB Flat Leads	SMBF	-55°C ~ 150°C

Showing

of 5

Types of Rectifier Diodes

Standard Rectifier Diodes

Standard Diodes (Silicon PN Junction)
Standard diodes are the most basic type of rectifier diode, made from silicon with a PN junction. They’re commonly used in AC-to-DC converters, power rectification, and general circuit protection. These diodes typically have a forward voltage drop around 0.7V and are best suited for low-frequency switching. Their reverse recovery time (how quickly they stop conducting when switched off) is relatively slow, which limits their use in high-speed applications. They also have low reverse leakage current, which makes them reliable for steady-state operations.

Schottky Barrier Diodes (SBD)
Schottky diodes (SBDs) use a metal-semiconductor junction instead of a traditional PN junction, resulting in faster switching speeds and lower forward voltage drops—often between 0.2V and 0.4V. This makes them ideal for DC-DC converters, high-efficiency power supplies, and circuits where minimizing power loss is critical. However, one drawback of SBDs is their higher reverse leakage current, especially at elevated temperatures, which can be a concern in precision or battery-operated devices.

Super Barrier Rectifiers (SBR)
Super Barrier Rectifiers (SBRs) combine the best traits of standard diodes and Schottky diodes. They offer low forward voltage drop like SBDs, but with significantly lower reverse leakage current and improved reverse voltage handling. SBRs are well-suited for switching power converters, adapters, and automotive electronics, where energy efficiency and thermal stability are important. They’re often a better choice than Schottky diodes when the application involves higher ambient temperatures or larger voltage transients.

Avalanche Diodes
Avalanche diodes are designed to operate reliably in reverse breakdown mode, where they safely conduct current once a specific reverse voltage threshold is exceeded. Unlike standard diodes that can be damaged by breakdown, avalanche diodes are built to handle this condition repeatedly and predictably.

Silicon Carbide (SiC) Diodes
SiC diodes are built from silicon carbide, a wide-bandgap material that allows them to handle very high voltages (600V and up) and extreme temperatures (>150°C). They are ideal for industrial converters, electric vehicle chargers, solar inverters, and motor drives, especially in circuits requiring fast switching and zero reverse recovery time. Although more expensive than silicon-based diodes, their durability and efficiency at high voltages and frequencies often make them the best long-term choice in demanding applications.