Single Diodes

Results: 12
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Technology
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Grade
Qualification
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
PMEG40T10ERX
PMEG10020ELRX
DIODE SCHOTTKY 100V 2A SOD123W
Nexperia USA Inc.
13,171
In Stock
1 : $0.26000
Cut Tape (CT)
3,000 : $0.06767
Tape & Reel (TR)
-
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
Schottky
100 V
2A
830 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
3.7 ns
150 nA @ 100 V
70pF @ 1V, 1MHz
-
-
Surface Mount
SOD-123W
SOD-123W
175°C (Max)
SOD123F
US1NWF-7
DIODE STANDARD 1200V 1A SOD123F
Diodes Incorporated
28,682
In Stock
8,454,000
Factory
1 : $0.46000
Cut Tape (CT)
3,000 : $0.11312
Tape & Reel (TR)
-
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
Standard
1200 V
1A
1.7 V @ 500 mA
Fast Recovery =< 500ns, > 200mA (Io)
80 ns
5 µA @ 1200 V
5pF @ 4V, 1MHz
Automotive
AEC-Q101
Surface Mount
SOD-123F
SOD-123F
-55°C ~ 150°C
TO-247-2
NDSH25170A
DIODE SIL CARB 1700V 25A TO2472
onsemi
116
In Stock
11,250
Factory
1 : $17.54000
Tube
Tariff may apply if shipping to the United States
-
Tube
Active
SiC (Silicon Carbide) Schottky
1700 V
25A
1.75 V @ 25 A
No Recovery Time > 500mA (Io)
0 ns
40 µA @ 1700 V
2025pF @ 1V, 100kHz
-
-
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
SIW10C170
UJ3D1725K2
DIODE SIL CARB 1700V 25A TO2472
onsemi
1,963
In Stock
1 : $17.71000
Tube
-
-
Tube
Active
SiC (Silicon Carbide) Schottky
1700 V
25A
1.7 V @ 25 A
No Recovery Time > 500mA (Io)
0 ns
360 µA @ 1700 V
1500pF @ 1V, 1MHz
Automotive
AEC-Q101
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
TO-247
MSC050SDA120B
DIODE SIL CARB 1200V 109A TO247
Microchip Technology
117
In Stock
1 : $16.92000
Tube
-
-
Tube
Active
SiC (Silicon Carbide) Schottky
1200 V
109A
1.8 V @ 50 A
No Recovery Time > 500mA (Io)
0 ns
200 µA @ 1200 V
246pF @ 400V, 1MHz
-
-
Through Hole
TO-247-2
TO-247
-55°C ~ 175°C
C3D10170H
C4D30120H
DIODE SIL CARB 1200V 94A TO2472
Wolfspeed, Inc.
374
In Stock
1 : $20.24000
Bulk
Tariff may apply if shipping to the United States
-
Bulk
Active
SiC (Silicon Carbide) Schottky
1200 V
94A
1.8 V @ 30 A
No Recovery Time > 500mA (Io)
-
250 µA @ 1200 V
2177pF @ 0V, 1MHz
-
-
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
TO-247
MSC030SDA170B
DIODE SIL CARB 1700V 82A TO247
Microchip Technology
40
In Stock
1 : $24.67000
Tube
-
-
Tube
Active
SiC (Silicon Carbide) Schottky
1700 V
82A
1.8 V @ 30 A
No Recovery Time > 500mA (Io)
0 ns
200 µA @ 1700 V
2070pF @ 1V, 1MHz
-
-
Through Hole
TO-247-2
TO-247
-55°C ~ 175°C
0
In Stock
Check Lead Time
1 : $2.51000
Tube
Tariff may apply if shipping to the United States
Tube
Active
Standard
1200 V
16A
3.93 V @ 32 A
Fast Recovery =< 500ns, > 200mA (Io)
135 ns
20 µA @ 1200 V
-
-
-
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AB (D2PAK)
-55°C ~ 150°C
SC-76, SOD-323
NSR0530HT1G
DIODE SCHOTTKY 30V 500MA SOD323
onsemi
0
In Stock
Check Lead Time
1 : $0.11000
Cut Tape (CT)
3,000 : $0.02121
Tape & Reel (TR)
-
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Bulk
Active
Schottky
30 V
500mA
620 mV @ 500 mA
Fast Recovery =< 500ns, > 200mA (Io)
-
200 µA @ 30 V
10pF @ 1V, 1MHz
-
-
Surface Mount
SC-76, SOD-323
SOD-323
-55°C ~ 150°C
PDZ10BGWJ
PMEG6010CEGWX
DIODE SCHOTTKY 60V 1A SOD123
Nexperia USA Inc.
0
In Stock
Check Lead Time
1 : $0.30000
Cut Tape (CT)
3,000 : $0.05050
Tape & Reel (TR)
Tariff may apply if shipping to the United States
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
Schottky
60 V
1A
660 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
50 µA @ 60 V
60pF @ 1V, 1MHz
-
-
Surface Mount
SOD-123
SOD-123
150°C (Max)
TO-247-2
GB50MPS17-247
DIODE SIL CARB 1700V 216A TO2472
GeneSiC Semiconductor
0
In Stock
600 : $31.98000
Tube
-
Tube
Obsolete
SiC (Silicon Carbide) Schottky
1700 V
216A
1.8 V @ 50 A
No Recovery Time > 500mA (Io)
0 ns
60 µA @ 1700 V
3193pF @ 1V, 1MHz
-
-
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
TO-247
MSC090SDA330B2
DIODE SIL CARB 3300V 184A TO247
Microchip Technology
0
In Stock
Check Lead Time
30 : $353.23200
Bulk
-
-
Bulk
Active
SiC (Silicon Carbide) Schottky
3300 V
184A
2.4 V @ 90 A
No Recovery Time > 500mA (Io)
0 ns
200 µA @ 3300 V
6326pF @ 1V, 1MHz
-
-
Through Hole
TO-247-2
TO-247
-55°C ~ 175°C
Showing
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Types of Rectifier Diodes

Standard Rectifier Diodes
  • Standard Diodes (Silicon PN Junction)
    Standard diodes are the most basic type of rectifier diode, made from silicon with a PN junction. They’re commonly used in AC-to-DC converters, power rectification, and general circuit protection. These diodes typically have a forward voltage drop around 0.7V and are best suited for low-frequency switching. Their reverse recovery time (how quickly they stop conducting when switched off) is relatively slow, which limits their use in high-speed applications. They also have low reverse leakage current, which makes them reliable for steady-state operations.

  • Schottky Barrier Diodes (SBD)
    Schottky diodes (SBDs) use a metal-semiconductor junction instead of a traditional PN junction, resulting in faster switching speeds and lower forward voltage drops—often between 0.2V and 0.4V. This makes them ideal for DC-DC converters, high-efficiency power supplies, and circuits where minimizing power loss is critical. However, one drawback of SBDs is their higher reverse leakage current, especially at elevated temperatures, which can be a concern in precision or battery-operated devices.

  • Super Barrier Rectifiers (SBR)
    Super Barrier Rectifiers (SBRs) combine the best traits of standard diodes and Schottky diodes. They offer low forward voltage drop like SBDs, but with significantly lower reverse leakage current and improved reverse voltage handling. SBRs are well-suited for switching power converters, adapters, and automotive electronics, where energy efficiency and thermal stability are important. They’re often a better choice than Schottky diodes when the application involves higher ambient temperatures or larger voltage transients.

  • Avalanche Diodes
    Avalanche diodes are designed to operate reliably in reverse breakdown mode, where they safely conduct current once a specific reverse voltage threshold is exceeded. Unlike standard diodes that can be damaged by breakdown, avalanche diodes are built to handle this condition repeatedly and predictably.
    • In fast switching rectification, avalanche diodes are sometimes preferred over standard PN diodes because of their improved reverse recovery behavior, which reduces switching losses and improves overall converter efficiency. Their ability to withstand high reverse voltage transients without degradation makes them particularly suited for snubber circuits, flyback converters, and hard-switched topologies.

  • Silicon Carbide (SiC) Diodes
    SiC diodes are built from silicon carbide, a wide-bandgap material that allows them to handle very high voltages (600V and up) and extreme temperatures (>150°C). They are ideal for industrial converters, electric vehicle chargers, solar inverters, and motor drives, especially in circuits requiring fast switching and zero reverse recovery time. Although more expensive than silicon-based diodes, their durability and efficiency at high voltages and frequencies often make them the best long-term choice in demanding applications.