
C3M0075120K | ||
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Digi-Key Part Number | 1697-C3M0075120K-ND | |
Manufacturer | ||
Manufacturer Product Number | C3M0075120K | |
Description | SICFET N-CH 1200V 30A TO247-4L | |
Manufacturer Standard Lead Time | 90 Weeks | |
Detailed Description | N-Channel 1200 V 30A (Tc) 113.6W (Tc) Through Hole TO-247-4L | |
Customer Reference | ||
Datasheet | Datasheet |
Type | Description | Select |
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Category | ||
Mfr | ||
Series | ||
Package | Tube | |
Product Status | Active | |
FET Type | ||
Technology | SiCFET (Silicon Carbide) | |
Drain to Source Voltage (Vdss) | ||
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 15V | |
Rds On (Max) @ Id, Vgs | 90mOhm @ 20A, 15V | |
Vgs(th) (Max) @ Id | 4V @ 5mA | |
Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 15 V | |
Vgs (Max) | +19V, -8V | |
Input Capacitance (Ciss) (Max) @ Vds | 1350 pF @ 1000 V | |
FET Feature | - | |
Power Dissipation (Max) | 113.6W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | ||
Supplier Device Package | TO-247-4L | |
Package / Case | ||
Base Product Number |
Resource Type | Link |
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Datasheets | C3M0075120K |
Featured Product | |
PCN Design/Specification | C3M00y Design Chg Apr/2018 |
Article Library | Use SiC-Based MOSFETs to Improve Power Conversion Efficiency |
EDA Models | C3M0075120K by Ultra Librarian |
Attribute | Description |
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RoHS Status | RoHS Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
ECCN | EAR99 |
HTSUS | 8541.29.0095 |
California Prop 65 | ![]() |
Qty | Unit Price | Ext Price |
---|---|---|
1 | $17.72000 | $17.72 |
10 | $16.28900 | $162.89 |
100 | $13.75720 | $1,375.72 |
500 | $12.23800 | $6,119.00 |
Attribute | Description |
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Other Names | C3M0075120K-ND 1697-C3M0075120K |
Standard Package | 30 |