
C3M0032120D | ||
---|---|---|
Digi-Key Part Number | 1697-C3M0032120D-ND | |
Manufacturer | ||
Manufacturer Product Number | C3M0032120D | |
Description | SICFET N-CH 1200V 63A TO247-3 | |
Manufacturer Standard Lead Time | 90 Weeks | |
Detailed Description | N-Channel 1200 V 63A (Tc) 283W (Tc) Through Hole TO-247-3 | |
Customer Reference | ||
Datasheet | Datasheet |
Type | Description | Select |
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Category | ||
Mfr | ||
Series | ||
Package | Tube | |
Product Status | Active | |
FET Type | ||
Technology | SiCFET (Silicon Carbide) | |
Drain to Source Voltage (Vdss) | ||
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 15V | |
Rds On (Max) @ Id, Vgs | 43mOhm @ 40A, 15V | |
Vgs(th) (Max) @ Id | 3.6V @ 11.5mA | |
Gate Charge (Qg) (Max) @ Vgs | 114 nC @ 15 V | |
Vgs (Max) | +15V, -4V | |
Input Capacitance (Ciss) (Max) @ Vds | 3357 pF @ 1000 V | |
FET Feature | - | |
Power Dissipation (Max) | 283W (Tc) | |
Operating Temperature | -40°C ~ 175°C (TJ) | |
Mounting Type | ||
Supplier Device Package | TO-247-3 | |
Package / Case | ||
Base Product Number |
Resource Type | Link |
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Datasheets | C3M0032120D |
Mfg Application Notes | |
Featured Product | |
PCN Packaging | Packing Update 19/Mar/2020 |
Article Library | Use SiC-Based MOSFETs to Improve Power Conversion Efficiency |
HTML Datasheet | C3M0032120D |
EDA Models | C3M0032120D by Ultra Librarian |
Attribute | Description |
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RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
ECCN | EAR99 |
HTSUS | 8541.29.0095 |
Qty | Unit Price | Ext Price |
---|---|---|
1 | $32.58000 | $32.58 |
10 | $30.04600 | $300.46 |
100 | $25.65760 | $2,565.76 |
Attribute | Description |
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Other Names | -3312-C3M0032120D |
Standard Package | 30 |