TO-247-3
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

C2M0040120D

Digi-Key Part Number
C2M0040120D-ND
Manufacturer
Manufacturer Product Number
C2M0040120D
Description
SICFET N-CH 1200V 60A TO247-3
Detailed Description
N-Channel 1200 V 60A (Tc) 330W (Tc) Through Hole TO-247-3
Customer Reference
Datasheet Datasheet
Product Attributes
Type
Description
Select
Category
Mfr
Series
Package
Tube
Product Status
Not For New Designs
FET Type
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
52mOhm @ 40A, 20V
Vgs(th) (Max) @ Id
2.8V @ 10mA
Gate Charge (Qg) (Max) @ Vgs
115 nC @ 20 V
Vgs (Max)
+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds
1893 pF @ 1000 V
FET Feature
-
Power Dissipation (Max)
330W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Supplier Device Package
TO-247-3
Package / Case
Base Product Number
Environmental & Export Classifications
AttributeDescription
RoHS StatusRoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
ECCNEAR99
HTSUS8541.29.0095
1,641 In Stock

All prices are in USD
Tube
QtyUnit PriceExt Price
1$45.81000$45.81
10$42.73500$427.35
100$37.10550$3,710.55
Additional Resources
AttributeDescription
Standard Package30
Substitutes (3)
Part No.ManufacturerQuantity AvailableDigi-Key Part No.Unit PriceSubstitute Type
G3R40MT12DGeneSiC Semiconductor01242-G3R40MT12D-ND$17.42000Similar
G3R40MT12KGeneSiC Semiconductor01242-G3R40MT12K-ND$17.67000Similar
MSC040SMA120BMicrochip Technology7MSC040SMA120B-ND$24.23000Similar