
C2M0025120D | ||
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Digi-Key Part Number | C2M0025120D-ND | |
Manufacturer | ||
Manufacturer Product Number | C2M0025120D | |
Description | SICFET N-CH 1200V 90A TO247-3 | |
Detailed Description | N-Channel 1200 V 90A (Tc) 463W (Tc) Through Hole TO-247-3 | |
Customer Reference | ||
Datasheet | Datasheet |
Type | Description | Select |
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Category | ||
Mfr | ||
Series | ||
Package | Tube | |
Product Status | Not For New Designs | |
FET Type | ||
Technology | SiCFET (Silicon Carbide) | |
Drain to Source Voltage (Vdss) | ||
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 20V | |
Rds On (Max) @ Id, Vgs | 34mOhm @ 50A, 20V | |
Vgs(th) (Max) @ Id | 2.4V @ 10mA | |
Gate Charge (Qg) (Max) @ Vgs | 161 nC @ 20 V | |
Vgs (Max) | +25V, -10V | |
Input Capacitance (Ciss) (Max) @ Vds | 2788 pF @ 1000 V | |
FET Feature | - | |
Power Dissipation (Max) | 463W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | ||
Supplier Device Package | TO-247-3 | |
Package / Case | ||
Base Product Number |
Resource Type | Link |
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Datasheets | C2M0025120D |
Featured Product | |
PCN Packaging | Packing Update 19/Mar/2020 |
Article Library | Use SiC-Based MOSFETs to Improve Power Conversion Efficiency |
HTML Datasheet | C2M0025120D |
EDA Models | C2M0025120D by Ultra Librarian |
Attribute | Description |
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RoHS Status | RoHS Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
ECCN | EAR99 |
HTSUS | 8541.29.0095 |
Qty | Unit Price | Ext Price |
---|---|---|
1 | $81.14000 | $81.14 |
10 | $76.95400 | $769.54 |
100 | $69.62550 | $6,962.55 |
Attribute | Description |
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Standard Package | 30 |
Part No. | Manufacturer | Quantity Available | Digi-Key Part No. | Unit Price | Substitute Type |
---|---|---|---|---|---|
MSC025SMA120B | Microchip Technology | 0 | 691-MSC025SMA120B-ND | $40.13000 | Similar |