USD

TO-220AB
TO-220AB
TO-220AB
IR(F,L)x Series Side 1

IRFBG30PBF

Digi-Key Part Number
IRFBG30PBF-ND
Manufacturer
Vishay Siliconix
Manufacturer Product Number
IRFBG30PBF
Supplier
Description
MOSFET N-CH 1000V 3.1A TO220AB
Manufacturer Standard Lead Time
12 Weeks
Detailed Description
N-Channel 1000V 3.1A (Tc) 125W (Tc) Through Hole TO-220AB
Customer Reference
Product Attributes
Type
Description
Select
Category
Mfr
Vishay Siliconix
Series
-
Package
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
5Ohm @ 1.9A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Vgs (Max)
±20V
FET Feature
-
Power Dissipation (Max)
125W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Drain to Source Voltage (Vdss)
1000V
Gate Charge (Qg) (Max) @ Vgs
80nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
980pF @ 25V
Base Product Number
Environmental & Export Classifications
AttributeDescription
RoHS StatusROHS3 Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
ECCNEAR99
HTSUS8541.29.0095
Price and Procurement