TPH3212PS Transphorm | Discrete Semiconductor Products

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TPH3212PS
Digi-Key Part Number	TPH3212PS-ND
Manufacturer	Transphorm
Manufacturer Product Number	TPH3212PS
Description	GANFET N-CH 650V 27A TO220AB
Detailed Description	N-Channel 650 V 27A (Tc) 104W (Tc) Through Hole TO-220AB
Customer Reference
Datasheet	Datasheet

Product Attributes

Type	Description	Select
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Transphorm
Series	-
Package	Tube
Product Status	Obsolete
FET Type	N-Channel
Technology	GaNFET (Cascode Gallium Nitride FET)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	27A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	72mOhm @ 17A, 8V
Vgs(th) (Max) @ Id	2.6V @ 400uA
Gate Charge (Qg) (Max) @ Vgs	14 nC @ 8 V
Vgs (Max)	±18V
Input Capacitance (Ciss) (Max) @ Vds	1130 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	104W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3
Base Product Number	TPH3212

Documents & Media

Resource Type	Link
Datasheets	TPH3212PS
Product Training Modules	GaN versus Silicon Carbide (SiC) in Power Electronics Circuit Topologies
Video File	Transform talks latest developments in GaN technology Welcome to the GaN Revolution!
Featured Product	TDTTP2500P100-KIT 2.5 kW Totem-Pole PFC GaN Eval Board
PCN Obsolescence/ EOL	TPH32/TPH32 02/Mar/2021
HTML Datasheet	TPH3212PS
Simulation Models	TPH3212PS Spice Model