TO-247-3
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

TPH3205WSBQA

Digi-Key Part Number
TPH3205WSBQA-ND
Manufacturer
Transphorm
Manufacturer Product Number
TPH3205WSBQA
Description
GANFET N-CH 650V 35A TO247-3
Detailed Description
N-Channel 650 V 35A (Tc) 125W (Tc) Through Hole TO-247-3
Customer Reference
Datasheet Datasheet
Product Attributes
Type
Description
Select
Category
Mfr
Transphorm
Series
Automotive, AEC-Q101
Package
Tube
Product Status
Last Time Buy
FET Type
N-Channel
Technology
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
62mOhm @ 22A, 8V
Vgs(th) (Max) @ Id
2.6V @ 700µA
Gate Charge (Qg) (Max) @ Vgs
42 nC @ 8 V
Vgs (Max)
±18V
Input Capacitance (Ciss) (Max) @ Vds
2200 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
125W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-3
Package / Case
TO-247-3
Base Product Number
TPH3205
Documents & Media
Resource TypeLink
Datasheets
Product Training ModulesGaN versus Silicon Carbide (SiC) in Power Electronics Circuit Topologies
Video File
Transform talks latest developments in GaN technology
Welcome to the GaN Revolution!
HTML Datasheet
Simulation ModelsTPH3205WSB(QA) Spice Model
Environmental & Export Classifications
AttributeDescription
Moisture Sensitivity Level (MSL)1 (Unlimited)
ECCNEAR99
HTSUS8541.29.0095
California Prop 65
Warning Information
All prices are in USD
Tube
QtyUnit PriceExt Price
1$24.01000$24.01
10$22.14900$221.49
100$18.91340$1,891.34
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Additional Resources
AttributeDescription
Standard Package30
Substitutes (1)
Part No.ManufacturerQuantity AvailableDigi-Key Part No.Unit PriceSubstitute Type
IXFH60N65X2IXYS75IXFH60N65X2-ND$11.36000Similar