TP90H180PS Transphorm | Discrete Semiconductor Products

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TP90H180PS
Digi-Key Part Number	TP90H180PS-ND
Manufacturer	Transphorm
Manufacturer Product Number	TP90H180PS
Description	GANFET N-CH 900V 15A TO220AB
Detailed Description	N-Channel 900 V 15A (Tc) 78W (Tc) Through Hole TO-220AB
Customer Reference
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Transphorm
Series	-
Package	Tube
Product Status	Obsolete
FET Type	N-Channel
Technology	GaNFET (Cascode Gallium Nitride FET)
Drain to Source Voltage (Vdss)	900 V
Current - Continuous Drain (Id) @ 25°C	15A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	205mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	2.6V @ 500µA
Gate Charge (Qg) (Max) @ Vgs	10 nC @ 8 V
Vgs (Max)	±18V
Input Capacitance (Ciss) (Max) @ Vds	780 pF @ 600 V
FET Feature	-
Power Dissipation (Max)	78W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3
Base Product Number	TP90H180

Documents & Media

Resource Type	Link
Datasheets	TP90H180PS Preliminary
Product Training Modules	GaN versus Silicon Carbide (SiC) in Power Electronics Circuit Topologies
Video File	Transform talks latest developments in GaN technology Welcome to the GaN Revolution!
PCN Obsolescence/ EOL	TPH32/TPH32 02/Mar/2021
HTML Datasheet	TP90H180PS Preliminary