USD

Discrete Semiconductor-FET

TP65H050WS

Digi-Key Part Number
TP65H050WS-ND
Manufacturer
Transphorm
Manufacturer Product Number
TP65H050WS
Supplier
Description
GANFET N-CH 650V 34A TO247-3
Manufacturer Standard Lead Time
12 Weeks
Detailed Description
N-Channel 34A (Tc) 119W (Tc) Through Hole TO-247-3
Customer Reference
Datasheet Datasheet
Product Attributes
Type
Description
Select
Category
Mfr
Transphorm
Series
-
Package
Tube
Part Status
Active
FET Type
N-Channel
Technology
GaNFET (Cascode Gallium Nitride FET)
Current - Continuous Drain (Id) @ 25°C
34A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
12V
Rds On (Max) @ Id, Vgs
60mOhm @ 22A, 10V
Vgs(th) (Max) @ Id
4.8V @ 700µA
Vgs (Max)
±20V
FET Feature
-
Power Dissipation (Max)
119W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-3
Package / Case
TO-247-3
Drain to Source Voltage (Vdss)
650 V
Gate Charge (Qg) (Max) @ Vgs
24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1000 pF @ 400 V
Base Product Number
Environmental & Export Classifications
AttributeDescription
RoHS StatusRoHS Compliant
Moisture Sensitivity Level (MSL)3 (168 Hours)
ECCNEAR99
HTSUS8541.29.0095
Price and Procurement