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TP65H050G4BS

Digi-Key Part Number
1707-TP65H050G4BS-ND
Manufacturer
Manufacturer Product Number
TP65H050G4BS
Description
650 V 34 A GAN FET
Manufacturer Standard Lead Time
13 Weeks
Detailed Description
N-Channel 650 V 34A (Tc) 119W (Tc) Surface Mount TO-263
Customer Reference
Datasheet Datasheet
Product Attributes
Type
Description
Select
Category
Mfr
Series
Package
Tube
Product Status
Active
FET Type
Technology
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
60mOhm @ 22A, 10V
Vgs(th) (Max) @ Id
4.8V @ 700µA
Gate Charge (Qg) (Max) @ Vgs
24 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1000 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
119W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Supplier Device Package
TO-263
Package / Case
Base Product Number
Environmental & Export Classifications
AttributeDescription
RoHS StatusROHS3 Compliant
Moisture Sensitivity Level (MSL)3 (168 Hours)
ECCNEAR99
HTSUS8541.29.0095
All prices are in USD
Tube
QtyUnit PriceExt Price
1$13.65000$13.65
10$12.54700$125.47
100$10.59660$1,059.66
500$9.42644$4,713.22
1,000$8.86500$8,865.00