Discrete Semiconductor-FET
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TP65H035WSQA

Digi-Key Part Number
TP65H035WSQA-ND
Manufacturer
Manufacturer Product Number
TP65H035WSQA
Description
GANFET N-CH 650V 47.2A TO247-3
Manufacturer Standard Lead Time
16 Weeks
Detailed Description
N-Channel 650 V 47.2A (Tc) 187W (Tc) Through Hole TO-247-3
Customer Reference
Datasheet Datasheet
Product Attributes
Type
Description
Select
Category
Mfr
Series
Package
Tube
Product Status
Active
FET Type
Technology
GaNFET (Cascode Gallium Nitride FET)
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
41mOhm @ 32A, 10V
Vgs(th) (Max) @ Id
4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
24 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1500 pF @ 400 V
Power Dissipation (Max)
187W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Supplier Device Package
TO-247-3
Package / Case
Base Product Number
Environmental & Export Classifications
AttributeDescription
Moisture Sensitivity Level (MSL)1 (Unlimited)
ECCNEAR99
HTSUS8541.29.0095
California Prop 65
Warning Information
All prices are in USD
Tube
QtyUnit PriceExt Price
1$22.15000$22.15
10$20.42800$204.28
100$17.44430$1,744.43
500$15.83756$7,918.78