Discrete Semiconductor-FET
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

TP65H035WS

Digi-Key Part Number
TP65H035WS-ND
Manufacturer
Transphorm
Manufacturer Product Number
TP65H035WS
Supplier
Description
GANFET N-CH 650V 46.5A TO247-3
Manufacturer Standard Lead Time
15 Weeks
Detailed Description
N-Channel 650 V 46.5A (Tc) 156W (Tc) Through Hole TO-247-3
Customer Reference
Datasheet Datasheet
Product Attributes
Type
Description
Select
Category
Mfr
Transphorm
Series
-
Package
Tube
Part Status
Active
FET Type
N-Channel
Technology
GaNFET (Cascode Gallium Nitride FET)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
46.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
12V
Rds On (Max) @ Id, Vgs
41mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
4.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
36 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1500 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
156W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-3
Package / Case
TO-247-3
Base Product Number
Environmental & Export Classifications
AttributeDescription
RoHS StatusRoHS Compliant
Moisture Sensitivity Level (MSL)3 (168 Hours)
ECCNEAR99
HTSUS8541.29.0095
All prices are in USD
Tube
QtyUnit PriceExt Price
1$20.49000$20.49
10$18.83500$188.35
100$15.90730$1,590.73
500$14.15064$7,075.32
Additional Resources
AttributeDescription
Standard Package30