TP65H015G5WS
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TP65H015G5WS

Digi-Key Part Number
1707-TP65H015G5WS-ND
Manufacturer
Manufacturer Product Number
TP65H015G5WS
Description
650 V 95 A GAN FET
Manufacturer Standard Lead Time
16 Weeks
Detailed Description
N-Channel 650 V 93A (Tc) 266W (Tc) Through Hole TO-247-3
Customer Reference
Datasheet Datasheet
Product Attributes
Type
Description
Select
Category
Mfr
Series
Package
Tube
Product Status
Active
FET Type
Technology
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
18mOhm @ 60A, 10V
Vgs(th) (Max) @ Id
4.8V @ 2mA
Gate Charge (Qg) (Max) @ Vgs
100 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
5218 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
266W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Supplier Device Package
TO-247-3
Package / Case
Environmental & Export Classifications
AttributeDescription
Moisture Sensitivity Level (MSL)1 (Unlimited)
ECCNEAR99
HTSUS8541.29.0095
California Prop 65
Warning Information
All prices are in USD
Tube
QtyUnit PriceExt Price
1$33.54000$33.54
10$30.93200$309.32
100$26.41380$2,641.38