Name: TW083N65C,S1F
Brand: Toshiba Semiconductor and Storage
SKU: 264-TW083N65CS1F-ND
Price: 16.28 USD
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

TW083N65C,S1F
DigiKey Part Number	264-TW083N65CS1F-ND
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	TW083N65C,S1F
Description	G3 650V SIC-MOSFET TO-247 83MOH
Manufacturer Standard Lead Time	24 Weeks
Customer Reference
Detailed Description	N-Channel 650 V 30A (Tc) 111W (Tc) Through Hole TO-247
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Toshiba Semiconductor and Storage
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	18V
Rds On (Max) @ Id, Vgs	113mOhm @ 15A, 18V
Vgs(th) (Max) @ Id	5V @ 600µA
Gate Charge (Qg) (Max) @ Vgs	28 nC @ 18 V
Vgs (Max)	+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds	873 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	111W (Tc)
Operating Temperature	175°C
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-247
Package / Case	TO-247-3