N-Channel 600 V 51A (Tc) 417W (Tc) Through Hole TO-247
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TSM60NE069PW C0G

DigiKey Part Number
1801-TSM60NE069PWC0G-ND
Manufacturer
Taiwan Semiconductor Corporation
Manufacturer Product Number
TSM60NE069PW C0G
Description
600V, 51A, SINGLE N-CHANNEL HIGH
Manufacturer Standard Lead Time
40 Weeks
Customer Reference
Detailed Description
N-Channel 600 V 51A (Tc) 417W (Tc) Through Hole TO-247
Datasheet
 Datasheet
EDA/CAD Models
TSM60NE069PW C0G Models
Product Attributes
Type
Description
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Category
Mfr
Taiwan Semiconductor Corporation
Series
-
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
51A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V, 12V
Rds On (Max) @ Id, Vgs
60mOhm @ 17A, 12V
Vgs(th) (Max) @ Id
6V @ 3.5mA
Gate Charge (Qg) (Max) @ Vgs
86 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
3566 pF @ 300 V
FET Feature
-
Power Dissipation (Max)
417W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-247
Package / Case
TO-247-3
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In-Stock: 295
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Quantity
All prices are in USD
Tube
QuantityUnit PriceExt Price
1$11.46000$11.46
10$7.94700$79.47
300$5.50050$1,650.15
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.