TO-247-3 HiP
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SCT50N120

Digi-Key Part Number
497-16598-5-ND
Manufacturer
Manufacturer Product Number
SCT50N120
Description
SICFET N-CH 1200V 65A HIP247
Manufacturer Standard Lead Time
52 Weeks
Detailed Description
N-Channel 1200 V 65A (Tc) 318W (Tc) Through Hole HiP247™
Customer Reference
Datasheet Datasheet
Product Attributes
Type
Description
Select
Category
Mfr
Series
-
Package
Tube
Product Status
Active
FET Type
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
69mOhm @ 40A, 20V
Vgs(th) (Max) @ Id
3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
122 nC @ 20 V
Vgs (Max)
+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds
1900 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
318W (Tc)
Operating Temperature
-55°C ~ 200°C (TJ)
Mounting Type
Supplier Device Package
HiP247™
Package / Case
Base Product Number
Environmental & Export Classifications
AttributeDescription
RoHS StatusROHS3 Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
REACH StatusREACH Unaffected
ECCNEAR99
HTSUS8541.29.0095
All prices are in USD
Tube
QtyUnit PriceExt Price
1$43.51000$43.51
10$40.12500$401.25
100$34.26430$3,426.43