TO-247-3
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SCT3080ALGC11

Digi-Key Part Number
SCT3080ALGC11-ND
Manufacturer
Rohm Semiconductor
Manufacturer Product Number
SCT3080ALGC11
Supplier
Description
SICFET N-CH 650V 30A TO247N
Detailed Description
N-Channel 650 V 30A (Tc) 134W (Tc) Through Hole TO-247N
Customer Reference
Datasheet Datasheet
Product Attributes
Type
Description
Select
Category
Mfr
Rohm Semiconductor
Series
-
Package
Tube
Part Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
104mOhm @ 10A, 18V
Vgs(th) (Max) @ Id
5.6V @ 5mA
Gate Charge (Qg) (Max) @ Vgs
48 nC @ 18 V
Vgs (Max)
+22V, -4V
Input Capacitance (Ciss) (Max) @ Vds
571 pF @ 500 V
FET Feature
-
Power Dissipation (Max)
134W (Tc)
Operating Temperature
175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247N
Package / Case
TO-247-3
Base Product Number
Environmental & Export Classifications
AttributeDescription
RoHS StatusROHS3 Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
REACH StatusREACH Unaffected
ECCNEAR99
HTSUS8541.29.0095
All prices are in USD
Tube
QtyUnit PriceExt Price
1$10.86000$10.86
10$9.81500$98.15
100$8.12570$812.57
500$7.07576$3,537.88
1,000$6.22500$6,225.00
Additional Resources
AttributeDescription
Standard Package450
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