Name: SCT3030ALGC11
Brand: Rohm Semiconductor
SKU: SCT3030ALGC11-ND
Price: 27.17 USD
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SCT3030ALGC11
Digi-Key Part Number	SCT3030ALGC11-ND
Manufacturer	Rohm Semiconductor
Manufacturer Product Number	SCT3030ALGC11
Supplier	Rohm Semiconductor
Description	SICFET N-CH 650V 70A TO247N
Detailed Description	N-Channel 650 V 70A (Tc) 262W (Tc) Through Hole TO-247N
Customer Reference
Datasheet	Datasheet

Product Attributes

Type	Description	Select
Category	Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single
Mfr	Rohm Semiconductor
Series	-
Package	Tube
Part Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	70A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	18V
Rds On (Max) @ Id, Vgs	39mOhm @ 27A, 18V
Vgs(th) (Max) @ Id	5.6V @ 13.3mA
Gate Charge (Qg) (Max) @ Vgs	104 nC @ 18 V
Vgs (Max)	+22V, -4V
Input Capacitance (Ciss) (Max) @ Vds	1526 pF @ 500 V
FET Feature	-
Power Dissipation (Max)	262W (Tc)
Operating Temperature	175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247N
Package / Case	TO-247-3
Base Product Number	SCT3030

Documents & Media

Resource Type	Link
Datasheets	SCT3030AL TO-247N Taping Spec
Other Related Documents	TO-247N Inner Structure SiC Flammability MOS-3GTHD Reliability Test TO-247N SiC Part Marking
Product Training Modules	SiC Trench MOSFETs
Video File	ROHM 4-pin SiC Power MOSFETs \| Digi-Key Daily
Environmental Information	SiC Whisker Info SCT3030AL ESD Data TO-247N MOS Constitution Material List SiC Level 1 MSL
Featured Product	3rd Generation Trench-Type SiC MOSFETs SiC Power MOSFETs
HTML Datasheet	TO-247N Taping Spec
Simulation Models	SCT3030AL Spice Model