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RFP2N10

Digi-Key Part Number
2156-RFP2N10-ND
Manufacturer
Harris Corporation
Manufacturer Product Number
RFP2N10
Description
N-CHANNEL, MOSFET
Detailed Description
N-Channel 100 V 2A (Tc) 25W (Tc) Through Hole TO-220
Customer Reference
Datasheet Datasheet
Product Attributes
Type
Description
Select
Category
Mfr
Series
-
Package
Bulk
Product Status
Active
FET Type
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.05Ohm @ 2A, 5V
Vgs(th) (Max) @ Id
4V @ 250µA
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
200 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
25W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Supplier Device Package
TO-220
Package / Case
Environmental & Export Classifications
AttributeDescription
RoHS StatusRoHS non-compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
REACH StatusVendor Undefined
ECCNEAR99
HTSUS8541.29.0095
All prices are in USD
Bulk
QtyUnit PriceExt Price
1,323$0.27000$357.21
Additional Resources
AttributeDescription
Other Names
2156-RFP2N10
HARHARRFP2N10
Standard Package1