NTH4L022N120M3S
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NTH4L060N090SC1

Digi-Key Part Number
488-NTH4L060N090SC1-ND
Manufacturer
onsemi
Manufacturer Product Number
NTH4L060N090SC1
Description
SILICON CARBIDE MOSFET, NCHANNEL
Manufacturer Standard Lead Time
46 Weeks
Detailed Description
N-Channel 900 V 46A (Tc) 221W (Tc) Through Hole TO-247-4L
Customer Reference
Datasheet Datasheet
Product Attributes
Type
Description
Select
Category
Mfr
onsemi
Series
-
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
900 V
Current - Continuous Drain (Id) @ 25°C
46A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V, 18V
Rds On (Max) @ Id, Vgs
43mOhm @ 20A, 18V
Vgs(th) (Max) @ Id
4.3V @ 5mA
Gate Charge (Qg) (Max) @ Vgs
87 nC @ 15 V
Vgs (Max)
+22V, -8V
Input Capacitance (Ciss) (Max) @ Vds
1770 pF @ 450 V
FET Feature
-
Power Dissipation (Max)
221W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-4L
Package / Case
TO-247-4
Documents & Media
Resource TypeLink
DatasheetsNTH4L060N090SC1
Environmental Information
Environmental & Export Classifications
AttributeDescription
RoHS StatusROHS3 Compliant
Moisture Sensitivity Level (MSL)Not Applicable
REACH StatusREACH Unaffected
ECCNEAR99
HTSUS8541.29.0095
All prices are in USD
Tube
QtyUnit PriceExt Price
1$15.83000$15.83
10$14.54800$145.48
100$12.28650$1,228.65
500$10.92974$5,464.87
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Associated Product
Additional Resources
AttributeDescription
Other Names
488-NTH4L060N090SC1DKR-ND
488-NTH4L060N090SC1CT-ND
488-NTH4L060N090SC1
488-NTH4L060N090SC1TR-ND
488-NTH4L060N090SC1TR
488-NTH4L060N090SC1CT
488-NTH4L060N090SC1DKR
Standard Package30