cms-photo-not-available
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

NTH4L022N120M3S

Digi-Key Part Number
488-NTH4L022N120M3S-ND
Manufacturer
onsemi
Manufacturer Product Number
NTH4L022N120M3S
Supplier
Description
SIC MOS TO247-4L 22MOHM 1200V
Manufacturer Standard Lead Time
47 Weeks
Detailed Description
N-Channel 1200 V 68A (Tc) 352W (Tc) Through Hole TO-247-4L
Customer Reference
Datasheet Datasheet
Product Attributes
Type
Description
Select
Category
Mfr
onsemi
Series
-
Package
Tube
Part Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
68A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
30mOhm @ 40A, 18V
Vgs(th) (Max) @ Id
4.4V @ 20mA
Gate Charge (Qg) (Max) @ Vgs
151 nC @ 18 V
Vgs (Max)
+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds
3175 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
352W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-4L
Package / Case
TO-247-4
Environmental & Export Classifications
AttributeDescription
RoHS StatusROHS3 Compliant
Moisture Sensitivity Level (MSL)Not Applicable
REACH StatusREACH Unaffected
ECCNEAR99
HTSUS8541.29.0095
All prices are in USD
Tube
QtyUnit PriceExt Price
1$22.73000$22.73
10$20.96200$209.62
25$20.02040$500.51
100$19.44250$1,944.25