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SICW040N120H4-BP

DigiKey Part Number
353-SICW040N120H4-BP-ND
Manufacturer
Manufacturer Product Number
SICW040N120H4-BP
Description
SIC MOSFET,TO-247-4
Manufacturer Standard Lead Time
20 Weeks
Customer Reference
Detailed Description
N-Channel 1200 V 62A (Tc) 326W (Tc) Through Hole TO-247-4
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Series
-
Packaging
Bulk
Part Status
Active
FET Type
Technology
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
52mOhm @ 30A, 20V
Vgs(th) (Max) @ Id
4.5V @ 40mA
Gate Charge (Qg) (Max) @ Vgs
229 nC @ 20 V
Vgs (Max)
+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds
3619 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
326W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-247-4
Package / Case
In-Stock: 285
Can ship immediately
New Product New Product
All prices are in USD
Bulk
QuantityUnit PriceExt Price
1$12.19000$12.19
10$9.10900$91.09
360$7.72072$2,779.46
Manufacturers Standard Package
Import Tariff may apply to this part if shipping to the United States