IMZA65R048M1HXKSA1
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IMZA65R048M1HXKSA1

Digi-Key Part Number
448-IMZA65R048M1HXKSA1-ND
Manufacturer
Manufacturer Product Number
IMZA65R048M1HXKSA1
Description
MOSFET 650V NCH SIC TRENCH
Detailed Description
N-Channel 650 V 39A (Tc) 125W (Tc) Through Hole PG-TO247-4-3
Customer Reference
Datasheet Datasheet
Product Attributes
Type
Description
Select
Category
Mfr
Series
Package
Tube
Product Status
Active
FET Type
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
64mOhm @ 20.1A, 18V
Vgs(th) (Max) @ Id
5.7V @ 6mA
Gate Charge (Qg) (Max) @ Vgs
33 nC @ 18 V
Vgs (Max)
+23V, -5V
Input Capacitance (Ciss) (Max) @ Vds
1118 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
125W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Supplier Device Package
PG-TO247-4-3
Package / Case
Base Product Number
Environmental & Export Classifications
AttributeDescription
RoHS StatusROHS3 Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
REACH StatusREACH Unaffected
ECCNEAR99
HTSUS8541.29.0095
All prices are in USD
Tube
QtyUnit PriceExt Price
1$17.60000$17.60
10$16.17800$161.78
100$13.66300$1,366.30
500$12.15422$6,077.11