
IMZA65R048M1HXKSA1 | ||
---|---|---|
Digi-Key Part Number | 448-IMZA65R048M1HXKSA1-ND | |
Manufacturer | ||
Manufacturer Product Number | IMZA65R048M1HXKSA1 | |
Description | MOSFET 650V NCH SIC TRENCH | |
Detailed Description | N-Channel 650 V 39A (Tc) 125W (Tc) Through Hole PG-TO247-4-3 | |
Customer Reference | ||
Datasheet | Datasheet |
Type | Description | Select |
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Category | ||
Mfr | ||
Series | ||
Package | Tube | |
Product Status | Active | |
FET Type | ||
Technology | SiCFET (Silicon Carbide) | |
Drain to Source Voltage (Vdss) | ||
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 18V | |
Rds On (Max) @ Id, Vgs | 64mOhm @ 20.1A, 18V | |
Vgs(th) (Max) @ Id | 5.7V @ 6mA | |
Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 18 V | |
Vgs (Max) | +23V, -5V | |
Input Capacitance (Ciss) (Max) @ Vds | 1118 pF @ 400 V | |
FET Feature | - | |
Power Dissipation (Max) | 125W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | ||
Supplier Device Package | PG-TO247-4-3 | |
Package / Case | ||
Base Product Number |
Resource Type | Link |
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Datasheets | IMZA65R048M1H |
Featured Product | Silicon Carbide CoolSiC™ MOSFETs and Diodes |
EDA Models |
Attribute | Description |
---|---|
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
REACH Status | REACH Unaffected |
ECCN | EAR99 |
HTSUS | 8541.29.0095 |
Qty | Unit Price | Ext Price |
---|---|---|
1 | $17.60000 | $17.60 |
10 | $16.17800 | $161.78 |
100 | $13.66300 | $1,366.30 |
500 | $12.15422 | $6,077.11 |
Attribute | Description |
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Other Names | 448-IMZA65R048M1HXKSA1 SP005398433 |
Standard Package | 30 |