MOSFETTO247
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IMZ120R090M1HXKSA1

Digi-Key Part Number
IMZ120R090M1HXKSA1-ND
Manufacturer
Manufacturer Product Number
IMZ120R090M1HXKSA1
Description
SICFET N-CH 1.2KV 26A TO247-4
Detailed Description
N-Channel 1200 V 26A (Tc) 115W (Tc) Through Hole PG-TO247-4-1
Customer Reference
Datasheet Datasheet
Product Attributes
Type
Description
Select
Category
Mfr
Series
Package
Tube
Product Status
Active
FET Type
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
15V, 18V
Rds On (Max) @ Id, Vgs
117mOhm @ 8.5A, 18V
Vgs(th) (Max) @ Id
5.7V @ 3.7mA
Gate Charge (Qg) (Max) @ Vgs
21 nC @ 18 V
Vgs (Max)
+23V, -7V
Input Capacitance (Ciss) (Max) @ Vds
707 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
115W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Supplier Device Package
PG-TO247-4-1
Package / Case
Base Product Number
Environmental & Export Classifications
AttributeDescription
RoHS StatusROHS3 Compliant
Moisture Sensitivity Level (MSL)Not Applicable
REACH StatusREACH Unaffected
ECCNEAR99
HTSUS8541.29.0095
All prices are in USD
Tube
QtyUnit PriceExt Price
1$15.13000$15.13
10$13.90100$139.01
100$11.73990$1,173.99
500$10.50350$5,251.75