IMW65R040M2HXKSA1

DigiKey Part Number
448-IMW65R040M2HXKSA1-ND
Manufacturer
Manufacturer Product Number
IMW65R040M2HXKSA1
Description
SILICON CARBIDE MOSFET
Manufacturer Standard Lead Time
23 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 46A (Tc) 172W (Tc) Through Hole PG-TO247-3-40
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Series
Packaging
Tube
Part Status
Active
FET Type
Technology
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
15V, 20V
Rds On (Max) @ Id, Vgs
36mOhm @ 22.9A, 20V
Vgs(th) (Max) @ Id
5.6V @ 4.6mA
Gate Charge (Qg) (Max) @ Vgs
28 nC @ 18 V
Vgs (Max)
+23V, -7V
Input Capacitance (Ciss) (Max) @ Vds
997 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
172W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
PG-TO247-3-40
Package / Case
Base Product Number
In-Stock: 8
Can ship immediately
All prices are in USD
Tube
QuantityUnit PriceExt Price
1$8.14000$8.14
10$6.30500$63.05
30$5.76900$173.07
120$5.29058$634.87
270$5.08581$1,373.17
510$4.95484$2,526.97
1,020$4.83641$4,933.14
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.