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IMW120Rxx0M1HXKSA1
IMW120R030M1HXKSA1
Digi-Key Part Number
IMW120R030M1HXKSA1-ND
Manufacturer
Infineon Technologies
Manufacturer Product Number
IMW120R030M1HXKSA1
Supplier
Description
COOLSIC MOSFETS 1200V
Manufacturer Standard Lead Time
20 Weeks
Detailed Description
N-Channel 1.2kV 56A (Tc) 227W (Tc) Through Hole
Customer Reference
Product Attributes
Type
Description
Select
Category
Mfr
Infineon Technologies
Series
Package
Tube
Part Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C
56A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V, 18V
Rds On (Max) @ Id, Vgs
40mOhm @ 25A, 18V
Vgs(th) (Max) @ Id
5.7V @ 10mA
Vgs (Max)
+23V, -7V
FET Feature
-
Power Dissipation (Max)
227W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
Package / Case
TO-247-3
Drain to Source Voltage (Vdss)
1.2kV
Gate Charge (Qg) (Max) @ Vgs
63nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds
2.12nF @ 800V
Environmental & Export Classifications
AttributeDescription
RoHS StatusROHS3 Compliant
Moisture Sensitivity Level (MSL)Not Applicable
Price and Procurement

236 In Stock
Can ship immediately
Import Tariff may apply to this part if shipping to the United States