GA20JT12-263
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

G3R30MT12J

Digi-Key Part Number
1242-G3R30MT12J-ND
Manufacturer
Manufacturer Product Number
G3R30MT12J
Description
SIC MOSFET N-CH 96A TO263-7
Manufacturer Standard Lead Time
20 Weeks
Detailed Description
N-Channel 1200 V 96A (Tc) 459W (Tc) Surface Mount TO-263-7
Customer Reference
Datasheet Datasheet
Product Attributes
Type
Description
Select
Category
Mfr
GeneSiC Semiconductor
Series
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
96A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V
Rds On (Max) @ Id, Vgs
36mOhm @ 50A, 15V
Vgs(th) (Max) @ Id
2.69V @ 12mA
Gate Charge (Qg) (Max) @ Vgs
155 nC @ 15 V
Vgs (Max)
±15V
Input Capacitance (Ciss) (Max) @ Vds
3901 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
459W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263-7
Package / Case
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Base Product Number
Environmental & Export Classifications
AttributeDescription
RoHS StatusRoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
ECCNEAR99
HTSUS8541.29.0095
All prices are in USD
Tube
QtyUnit PriceExt Price
1$24.20000$24.20
10$21.99200$219.92
25$21.17040$529.26
100$20.94600$2,094.60