GA20JT12-263
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

G2R1000MT17J

Digi-Key Part Number
1242-G2R1000MT17J-ND
Manufacturer
Manufacturer Product Number
G2R1000MT17J
Description
SIC MOSFET N-CH 3A TO263-7
Manufacturer Standard Lead Time
20 Weeks
Detailed Description
N-Channel 1700 V 3A (Tc) 54W (Tc) Surface Mount TO-263-7
Customer Reference
Datasheet Datasheet
Product Attributes
Type
Description
Select
Category
Mfr
GeneSiC Semiconductor
Series
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1700 V
Current - Continuous Drain (Id) @ 25°C
3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
1.2Ohm @ 2A, 20V
Vgs(th) (Max) @ Id
4V @ 2mA
Vgs (Max)
+20V, -10V
Input Capacitance (Ciss) (Max) @ Vds
139 pF @ 1000 V
FET Feature
-
Power Dissipation (Max)
54W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263-7
Package / Case
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Base Product Number
Environmental & Export Classifications
AttributeDescription
RoHS StatusRoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
ECCNEAR99
HTSUS8541.29.0095
All prices are in USD
Tube
QtyUnit PriceExt Price
1$6.82000$6.82
10$6.11300$61.13
25$5.85120$146.28
100$5.47700$547.70
250$5.24280$1,310.70
500$5.23950$2,619.75