G2R1000MT17D
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G2R1000MT17D

Digi-Key Part Number
1242-G2R1000MT17D-ND
Manufacturer
GeneSiC Semiconductor
Manufacturer Product Number
G2R1000MT17D
Supplier
Description
SIC MOSFET N-CH 4A TO247-3
Manufacturer Standard Lead Time
20 Weeks
Detailed Description
N-Channel 1700 V 4A (Tc) 53W (Tc) Through Hole TO-247-3
Customer Reference
Datasheet Datasheet
Product Attributes
Type
Description
Select
Category
Mfr
GeneSiC Semiconductor
Series
Package
Tube
Part Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1700 V
Current - Continuous Drain (Id) @ 25°C
4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
1.2Ohm @ 2A, 20V
Vgs(th) (Max) @ Id
4V @ 2mA
Vgs (Max)
+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds
139 pF @ 1000 V
FET Feature
-
Power Dissipation (Max)
53W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-3
Package / Case
TO-247-3
Base Product Number
Environmental & Export Classifications
AttributeDescription
RoHS StatusRoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
ECCNEAR99
HTSUS8541.29.0095
All prices are in USD
Tube
QtyUnit PriceExt Price
1$4.86000$4.86
10$4.19600$41.96
25$3.96000$99.00
100$3.78480$378.48
Additional Resources
AttributeDescription
Other Names1242-G2R1000MT17D
Standard Package30