SIC Power Module

BSM180D12P3C007

Digi-Key Part Number
BSM180D12P3C007-ND
Manufacturer
Rohm Semiconductor
Manufacturer Product Number
BSM180D12P3C007
Supplier
Description
SIC POWER MODULE
Manufacturer Standard Lead Time
17 Weeks
Detailed Description
Mosfet Array 2 N-Channel (Dual) 1200V (1.2kV) 180A (Tc) 880W Surface Mount Module
Customer Reference
Datasheet Datasheet
Product Attributes
Type
Description
Select
Category
Mfr
Rohm Semiconductor
Series
-
Package
Bulk
Part Status
Active
FET Type
2 N-Channel (Dual)
FET Feature
Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C
180A (Tc)
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
5.6V @ 50mA
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
900pF @ 10V
Power - Max
880W
Operating Temperature
175°C (TJ)
Mounting Type
Surface Mount
Package / Case
Module
Supplier Device Package
Module
Base Product Number
Environmental & Export Classifications
AttributeDescription
RoHS StatusROHS3 Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
REACH StatusREACH Unaffected
ECCNEAR99
HTSUS8541.29.0095
Bulk
QtyUnit PriceExt Price
1$563.26000$563.26