How to Apply Third-Generation SiC MOSFETs to Power Designs for Higher Performance and Efficiency
Silicon carbide MOSFETs offer multiple benefits compared to silicon-only devices; third-generation devices overcome shortcomings of earlier products.
Wide Bandgap Semiconductors Are Reshaping the Transportation World
The entire transportation sector is undergoing a radical transformation with solutions for electric and hybrid cars and cleaner mass transportation.
NTBG040N120M3S 40 mΩ SiC MOSFETonsemi’s NTBG040N120M3S 1200 V M3S SiC MOSFET achieves peak efficiency with an 18 V gate drive and retains satisfactory performance at 15 V.
NTBG030N120M3S Silicon Carbide (SiC) MOSFETsonsemi’s M3S EliteSiC MOSFET has optimized performance for fast switching applications, maximizing efficiency and minimizing energy loss.
FGH4L50T65MQDC50 IGBTonsemi's FGH4L50T65MQDC50 powerhouse IGBT leverages IGBT and SiC Schottky diode technology to deliver unrivaled efficiency in high-demand operations.